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Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes.
- Source :
-
Journal of Physics D: Applied Physics . 10/3/2018, Vol. 51 Issue 3, p1-1. 1p. - Publication Year :
- 2018
-
Abstract
- We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ALUMINUM gallium nitride
*LIGHT emitting diodes
*ENERGY conversion
Subjects
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 51
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 131551091
- Full Text :
- https://doi.org/10.1088/1361-6463/aa9e0e