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Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes.

Authors :
Guo-Dong Hao
Manabu Taniguchi
Naoki Tamari
Shin-ichiro Inoue
Source :
Journal of Physics D: Applied Physics. 10/3/2018, Vol. 51 Issue 3, p1-1. 1p.
Publication Year :
2018

Abstract

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
51
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
131551091
Full Text :
https://doi.org/10.1088/1361-6463/aa9e0e