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The obtained experimental results allow us to clarify the nature of mechanisms related to the presence of cations in disordered InGaN alloy and hetero-interfaces. The capture of charge carriers by cations reduces the external quantum efficiency (EQE) in green MQWs at j < 10 A/cm2. The EQE droop phenomenon caused by smoothed out lateral potential fluctuations occurs at j > 10 A/cm2. At j > 40 A/cm2 the droop associated with interactions between charge carriers and dislocations and grain boundaries takes place.

In this work, the modification of the surface parameters of graphene chips after electrolysis treatment in a NaClO4 aqueous solution has been studied. Two electrolysis modes have been analysed. In the first one, a negative potential (-0.2 V) is applied to the graphene chips, while in the second one the potential is positive (0.8 V). Investigation using a number of techniques including atomic force microscopy, Kelvin probe force microscopy, Raman spectroscopy, measurements of current-voltage characteristics and low-frequency noise has shown that the electrolysis mode with application of a positive potential on graphene chips decreases the 1/f noise and allows one to obtain a uniform surface potential distribution while leaving the graphene structure undamaged. The results of this study help to understand the efficiency and reproducibility of the procedure for electrolysis treatment of graphene chips.

The contribution of several mechanisms to the external quantum efficiency (EQE) droop in blue InGaN/GaN LEDs occur at different current densities j and voltages in MQWs situated inside and outside of a depletion region around p-n junction. It is clarified that an increase in EQE droop at 300-400 K (j < 10 A/cm2) is due to non-radiative losses related to an enhancement in trap-assisted tunneling. It is also associated with a growth in the concentration of delocalized carriers. The main source of the EQE droop under direct current and at pulse mode when j > 30 A/cm2 is non-equilibrium filling of lateral regions of different size within MQWs placed outside of depletion region by delocalized carriers activated by injection when voltage exceed a threshold value (U > Uth). This leads to a decrease in localized potential and to the blue shift of EQE maximum over wavelengths followed by the EQE droop.

It was shown that the contribution of 3D nanoscale indium fluctuations into the efficiency droop at j 50 A/cm2 and the current dependences of efficiency, approximated by as η (j) α j-b where 0.2 < b < 0.3, are alike in both green and blue LEDs.

The obtained results demonstrate that the improvement of nanomaterial arrangement in AlGaN/GaN HEMT structures quantitatively characterized with the use of a multifractal parameter (the degree of disorder) results in the increase at several times in the electron mobility values at 2DEG channel in HEMT structures and the reliability of HEMT parameters.