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Impact of nanomaterial arrangement on the reliability and the electron mobility in AlGaN/GaN HEMTs
- Source :
- Journal of Physics: Conference Series. 741:012172
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- The obtained results demonstrate that the improvement of nanomaterial arrangement in AlGaN/GaN HEMT structures quantitatively characterized with the use of a multifractal parameter (the degree of disorder) results in the increase at several times in the electron mobility values at 2DEG channel in HEMT structures and the reliability of HEMT parameters.
Details
- ISSN :
- 17426596 and 17426588
- Volume :
- 741
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Conference Series
- Accession number :
- edsair.doi...........9ae8798054593c2551f8cdc3b133cc8a