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Summary: Geometrical phase analysis (GPA) is typically a powerful tool to investigate the deformation in high resolution transmission electron microscopy images and has been used in various fields. During GPA, strain components are calculated relative to an undistorted reference region. In the present work, the effect of reference region size on strain measurements has been investigated. Experimental measurements on a locally distorted gold nanoparticle exhibited that a small reference region below the GPA spatial resolution can introduce an inaccuracy in the measured displacement field, which appears as a significant increase in measured strains and severe fluctuation in phase images. The inaccuracy may be ascribed to an error of insufficient sampling. Our results suggest that a small reference region below the GPA spatial resolution should be avoided during GPA. This prerequisite should be paid more attention to during strain measurement on nanoparticles. [ABSTRACT FROM AUTHOR]

Cross-sectional transmission electron microscopy and X-ray phase analysis were used to study the structure of a layer formed during nitriding the AISI 316L stainless steel at temperature 440°C. It was found that the applied treatment led to the formation of 6-μm-thick layer of the S-phase. There is no evidence of CrN precipitation. The X-ray diffraction experiments proved that the occurred austenite lattice expansion – due to nitrogen atoms – depended on the crystallographic direction. The cross-sectional transmission electron microscopy studies showed that the layer consisted of a single cubic phase that contained a lot of defects such as dislocations, stacking faults, slip bands and twins. The high-resolution electron microscopy observations were applied to study the defect formation due to the nitriding process. It was shown that the presence of great number of stacking faults leads to formation of nanotwins. Weak, forbidden {100} reflections were still another characteristic feature of the S-phase. These were not detected in the X-ray spectra of the phase. Basing on the high-resolution electron microscopy studies it can be suggested that the short-range ordering of the nitrogen atoms in the octahedral sites inside the f.c.c. matrix lattice takes place and gives rise to appearance of these spots. It is suggested that the cubic lattice undergoes not only expansion but also slight rombohedral distortion that explains differences in the lattice expansion for different crystallographic directions. [ABSTRACT FROM AUTHOR]

The structure of Al3Zr precipitates in Al-1.0Mg-0.6Si-0.5Zr (in wt.%) alloy was investigated using conventional transmission electron microscopy (TEM) and high-resolution TEM (HREM). After annealing of the alloy in the temperature range 450–540 °C, spherical precipitates of metastable L12-Al3Zr phase appeared nearly homogeneously within the matrix, and elongated particles were found at grain boundaries. L12-structured Al3Zr were about 20–30 nm in diameter and coherent with the matrix. Inside some of them, planar faults parallel to {100} planes were revealed by use of HREM. Most probably, these faults are an indication of the transition stage of transformation to the stable D023-type Al3Zr phase. The elongated precipitates (about 100 nm) were identified as D022-type Al3Zr. Energy-dispersive X-ray analysis showed that they contain, apart from Al, mainly Zr with small amounts of Si. The substitution of Al by Si increased the stability of the D022-Al3Zr as compared with D023-Al3Zr. [ABSTRACT FROM AUTHOR]

In a boron nitride thin film, grown on a Si (100) substrate by radio frequency magnetron sputtering, a striking nanostructure is observed by high-resolution transmission electron microscopy. It consists of cubic boron nitride nanocrystals with a rather good triangular shape, pointing always to the substrate. The nanocrystals are usually highly defected and present their own interesting internal structure. Texture formation is observed within a nanocrystal, with all the subgrains observed to have a common <011> axis, which is also approximately parallel to a <011> axis of the Si substrate, i.e. the nanocrystals are very well structurally orientated in relation to the Si substrate (self-organized). Dislocations and stacking faults are also found in the nanocrystals. [ABSTRACT FROM AUTHOR]