1. Fabrication of transparent conducting films composed of In3+ doped CuS and their application in flexible electroluminescent devices
- Author
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Dinesh K. Patel, Huang Zhen, Shlomo Magdassi, Ariando, and Alexander Kamyshny
- Subjects
Materials science ,Fabrication ,business.industry ,Annealing (metallurgy) ,Doping ,Nanotechnology ,General Chemistry ,Electroluminescence ,Electrode ,Materials Chemistry ,Optoelectronics ,business ,Sheet resistance ,Order of magnitude ,Transparent conducting film - Abstract
Transparent conductive films composed of CuS were formed by wet deposition on PET at room temperature followed by annealing at 100 °C for 1 hour. The resistance of the films was tuned by doping with In3+. A decrease of over an order of magnitude of the sheet resistance was obtained, from 1721 Ω sq−1 for undoped CuS film to 109 Ω sq−1 for In3+ doped. Transparency of the conducting films could be tuned by an appropriate selection of reaction time and In3+ concentration. It was found that films containing 10 mol% of In3+ ions after a reaction duration of 24 hours have a sheet resistance of ∼270 Ω sq−1 and a transparency of ∼80%. The fabricated films are characterized by excellent adhesion to the PET substrate and are shown to be suitable for use as transparent conducting electrodes (TCE) in flexible electroluminescent (EL) devices.
- Published
- 2015