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"Dragging mode" electrohydrodynamic jet printing of polymer-wrapped semiconducting single-walled carbon nanotubes for NO gas-sensing field-effect transistors.

Authors :
Tang, Xiaowu
Girma, Henok Getachew
Li, Zhijun
Hong, Jisu
Lim, Bogyu
Jung, Seo-Hyun
Kim, Yejin
Nam, Sang Yong
Kim, Kyunghun
Kong, Hoyoul
Kim, Se Hyun
Source :
Journal of Materials Chemistry C; 11/28/2021, Vol. 9 Issue 44, p15804-15812, 9p
Publication Year :
2021

Abstract

In this study, we investigated facile "dragging mode" electrohydrodynamic (EHD) jet printing of a polymer-wrapped semiconducting single-walled carbon nanotube (s-SWCNT) ink, for fabrication of NO gas-sensing field-effect transistors (FETs). The "dragging mode" provides a favorable environment for reliable printing and interconnection between the s-SWCNTs. Printing parameters such as supply voltages, printing speeds, and the number of prints were manipulated to find an optimal printing condition and obtain high-performance FETs. Under optimal conditions, the polymer-wrapped s-SWCNT-based FETs exhibited an average field-effect mobility of 2.939 cm<superscript>2</superscript> (V<superscript>−1</superscript> s<superscript>−1</superscript>), a threshold voltage of 2.21 V, an on/off ratio of ∼10<superscript>3</superscript>, and a subthreshold swing of 0.968 V dec<superscript>−1</superscript>. Additionally, we demonstrated the application of FETs as NO sensors with high sensitivity and selectivity. The FET-type NO gas sensor exhibits a dynamic sensing range of 500 ppb–30 ppm and clear selectivity among various analyte gases including ethanol, ammonia, and acetone. Therefore, the "dragging mode" EHD jet printing introduced in this study simplifies patterning processes and is a potential reproducible method for the fabrication of next-generation gas sensors. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20507526
Volume :
9
Issue :
44
Database :
Complementary Index
Journal :
Journal of Materials Chemistry C
Publication Type :
Academic Journal
Accession number :
173555816
Full Text :
https://doi.org/10.1039/d1tc04638a