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Abstract: A detailed study is presented on the influence of Mn-doping on densities of screw (c-type) and edge (a-type) threading dislocations (TDs) in Ga1− x Mn x N grown by metal organic chemical vapor deposition (MOCVD) by using high-resolution X-ray diffraction (XRD). Three regions were present in Mn source rate dependence plots of density of c-TDs, and the mean twist angle corresponding to the density of a-TDs. In each region, Mn-doping exhibits different effects on the densities of a- and c-TDs, which is attributed to different dependences of the two types of TD on stresses. The results obtained from X-ray diffraction are consistent with those of atomic force microscope (AFM) measurements. It is further suggested that similar phenomena would occur when doping other elements into GaN grown by MOCVD. [Copyright &y& Elsevier]

Abstract: The vertical conductivity of the p-Al0.11Ga0.89N/GaN SLs has been measured and calculated. The measured result (1.35×10−5 Scm−1) is in good agreement with the calculated result (2.26×10−5 Scm−1), indicating that the adoption of Fermi–Dirac distribution and sequential tunneling model in our calculation is very plausible. As a result, it is suggested that in p-AlGaN/GaN SLs the Fermi–Dirac distribution need to be considered in calculation related to hole distribution. [Copyright &y& Elsevier]