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Vertical conductivity of p-Al x Ga1− x N/GaN superlattices measured with modified transmission line model

Authors :
Hu, C.Y.
Wang, Y.J.
Xu, K.
Hu, X.D.
Yu, L.S.
Yang, Z.J.
Shen, B.
Zhang, G.Y.
Source :
Journal of Crystal Growth. Jan2007, Vol. 298, p815-818. 4p.
Publication Year :
2007

Abstract

Abstract: The vertical conductivity of the p-Al0.11Ga0.89N/GaN SLs has been measured and calculated. The measured result (1.35×10−5 Scm−1) is in good agreement with the calculated result (2.26×10−5 Scm−1), indicating that the adoption of Fermi–Dirac distribution and sequential tunneling model in our calculation is very plausible. As a result, it is suggested that in p-AlGaN/GaN SLs the Fermi–Dirac distribution need to be considered in calculation related to hole distribution. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00220248
Volume :
298
Database :
Academic Search Index
Journal :
Journal of Crystal Growth
Publication Type :
Academic Journal
Accession number :
23824035
Full Text :
https://doi.org/10.1016/j.jcrysgro.2006.10.136