25 results on '"Xu K"'
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2. High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers
3. Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring
4. BaCaBO 3F: A nonlinear optical crystal investigated for UV light generation
5. Growth and characterization of a nonlinear borate optical crystal: BaNaB 9O 15
6. Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping
7. The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
8. Vertical conductivity of p-Al xGa 1−xN/GaN superlattices measured with modified transmission line model
9. Investigation on the different barrier effect of Ni and Pt in the Ti/Al/Pt/Au and Ti/Al/Ni/Au contacts to n-type GaN
10. Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry
11. Effect of AlN interlayer on incorporation efficiency of Al composition in AlGaN grown by MOVPE
12. Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition
13. Polarity control of GaN grown on sapphire substrate by RF-MBE
14. In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBE
15. AlN thin film grown on different substrates by hydride vapor phase epitaxy
16. Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
17. BaCaBO3F: A nonlinear optical crystal investigated for UV light generation
18. Vertical conductivity of p-AlxGa1−xN/GaN superlattices measured with modified transmission line model
19. Reduction of threading edge dislocation density in n-type GaN by Si delta-doping
20. BaCaBO3F: A nonlinear optical crystal investigated for UV light generation
21. Growth and characterization of a nonlinear borate optical crystal: BaNaB9O15
22. Strain-energy-driven abnormal grain growth in copper films on silicon substrates
23. Growth of large-sized sapphire boules by temperature gradient technique (TGT)
24. t-LiAlO~2 single crystal: a novel substrate for GaN epitaxy
25. Vertical conductivity of p-Al x Ga1− x N/GaN superlattices measured with modified transmission line model
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