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Details a study which examined the phonon-assisted tunneling in gallium arsenide/aluminum arsenide double-barrier structures. Significance of optical phonon-emission processes to the design of heterostructure devices; Theoretical background of phonon emission; Methodology and results; Conclusion.

Presents a study that examined the role of localized phonon modes in phonon-assisted tunneling in gallium arsenide/aluminum-arsenic double barrier resonant tunneling structures. Calculation of phonon modes using a dielectric continuum model and electron-phonon Hamiltonians; Discussion on electronic transport in bulk and layered semiconductors; Background on localized modes and electron-phonon Hamiltonians.

Presents information on a study that examined an electron-optical-phonon interaction in a double-barrier heterostructure. Use of a macroscopic dielectric continuum approach; Discussion on electron interactions; Schematic drawing of a double-barrier heterostructure.