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Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures.
- Source :
-
Journal of Applied Physics . 11/15/1995, Vol. 78 Issue 10, p6104. 4p. 4 Graphs. - Publication Year :
- 1995
-
Abstract
- Details a study which examined the phonon-assisted tunneling in gallium arsenide/aluminum arsenide double-barrier structures. Significance of optical phonon-emission processes to the design of heterostructure devices; Theoretical background of phonon emission; Methodology and results; Conclusion.
- Subjects :
- *PHONONS
*QUANTUM tunneling
*GALLIUM arsenide
*ARSENIC compounds
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7663632
- Full Text :
- https://doi.org/10.1063/1.360551