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The Fe1−xGax thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe0.6Ga0.4 film, while an impure Fe3Ga phase with DO3 structure is appeared in Fe0.5Ga0.5 film. The saturated magnetizations at room temperature are observed to be 570 emu/cm3 and 180 emu/cm3 and the coercivities to be 170 and 364 Oe for Fe0.6Ga0.4 and Fe0.5Ga0.5, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe0.5Ga0.5 film. However, there is a weak hysteresis noticed in Fe0.4Ga0.6 thin film.

In this work, the growth and ferromagnetic properties of e-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 °C results in polycrystalline e-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in e-FeSi thin films was observed. The saturated magnetization and coercive field of e-FeSi film are 4.6 emu/cm3 and 29 Oe at 300 K, respectively.