Influence of Ga content on the structure and anomalous Hall effect of Fe1-xGax thin films on GaSb(100).

Authors :: Duong Anh Tuan
Yooleemi Shin
The-Long Phan
Tran Viet Cuong
Sunglae Cho
Source :: Journal of Applied Physics; 2014, Vol. 115 Issue 17, p17C742-1-17C742-3, 3p
Publication Year :: 2014
Abstract: The Fe<subscript>1-x</subscript>Ga<subscript>x</subscript> thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc a-Fe crystal structure (A2) is observed in Fe<subscript>0.6</subscript>Ga<subscript>0.4</subscript> film, while an impure Fe<subscript>3</subscript>Ga phase with DO<subscript>3</subscript> structure is appeared in Fe<subscript>0.5</subscript>Ga<subscript>0.5</subscript> film. The saturated magnetizations at room temperature are observed to be 570 emu/cm3 and 180emu/cm<subscript>3</subscript> and the coercivities to be 170 and 364Oe for Fe<subscript>0.6</subscript>Ga<subscript>0.4</subscript> and Fe<subscript>0.5</subscript>Ga<subscript>0.5</subscript>, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe<subscript>0.5</subscript>Ga<subscript>0.5</subscript> film. However, there is a weak hysteresis noticed in Fe<subscript>0.4</subscript>Ga<subscript>0.6</subscript> thin film. [ABSTRACT FROM AUTHOR]

Subjects :: MAGNETIC properties of thin films
HALL effect
MAGNETIZATION
HYSTERESIS
MAGNETIC fields

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