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Your search keyword '"Nishitani, T."' showing total 6 results
Start Over Author "Nishitani, T." Journal journal of applied physics
6 results on '"Nishitani, T."'

1. Surface photovoltage effect and its time dependence in GaAs-GaAsp superlattice studied with combination of synchrotron and laser radiation

Author

Tanaka, S., Nishitani, T., Nakanishi, T., More, S. D., Azuma, J., Takashi, K., Watanabe, O., and Kamada, M.

Subjects
Gallium arsenide -- Optical properties, Laser beams -- Analysis, Synchrotron radiation -- Analysis, Physics
Abstract

The surface photovoltage (SPV) effect and its temporal profiles in a GaAs-GaAsP superlattice (SL) are measured by core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser. The findings show that the SL with high-doping surface layer is suitable for the spin-polarized electron source without the SPV effect.

Published
2004

2. Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes.

Author

Nishitani, T., Nakanishi, T., Yamamoto, M., Okumi, S., Furuta, F., Miyamoto, M., Kuwahara, M., Yamamoto, N., Naniwa, K., Watanabe, O., Takeda, Y., Kobayakawa, H., Takashima, Y., Horinaka, H., Matsuyama, T., Togawa, K., Saka, T., Tawada, M., Omori, T., and Kurihara, Y.

Subjects
*PHOTOCATHODES, *CATHODES, *FIELD emission cathodes, *GALLIUM arsenide semiconductors, *SEMICONDUCTORS, *SUPERLATTICES
Abstract

GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes are presented as emission sources for highly polarized electron beams. The GaAs–GaAsP cathode achieved a maximum polarization of 92(±6)% with a quantum efficiency of 0.5%, while the InGaAs–AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization [77(±5)%]. Criteria for achieving high polarization using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra. [ABSTRACT FROM AUTHOR]

Published
2005
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