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Surface photovoltage effect and its time dependence in GaAs-GaAsp superlattice studied with combination of synchrotron and laser radiation
- Source :
- Journal of Applied Physics. Jan 15, 2004, Vol. 95 Issue 2, p551, 6 p.
- Publication Year :
- 2004
-
Abstract
- The surface photovoltage (SPV) effect and its temporal profiles in a GaAs-GaAsP superlattice (SL) are measured by core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser. The findings show that the SL with high-doping surface layer is suitable for the spin-polarized electron source without the SPV effect.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 95
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.125013326