Surface photovoltage effect and its time dependence in GaAs-GaAsp superlattice studied with combination of synchrotron and laser radiation

The surface photovoltage (SPV) effect and its temporal profiles in a GaAs-GaAsP superlattice (SL) are measured by core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser. The findings show that the SL with high-doping surface layer is suitable for the spin-polarized electron source without the SPV effect.