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Pumped by a Ti:sapphire laser, a passively Q-switched laser oscillation from an unprocessed Nd:LaB3O6 cleavage microchip with a Cr4+:YAG saturable absorber has been demonstrated. The influence of the transmission of the output coupler on the pulse width and repetition rate at various absorbed pump powers has been investigated. A pulse with 2.8 μJ energy, 2.2 ns duration, and 29 kHz repetition rate at 1060 nm was obtained at the absorbed pump power of 1.25 W and output coupler transmission of 3.2%, which results in 1.25 kW peak power. The polarization and spectral properties of laser radiation were measured. [ABSTRACT FROM AUTHOR]

The improvement of the laser performances of an unprocessed 5.6 at. % Nd3+:LaB3O6 cleavage microchip has been reported. Pumped by a Ti:sapphire laser at 871 nm, quasi-cw output laser power up to 395 mW around 1060 nm wavelength with slope efficiency near 52% has been obtained in an end-pumped plano-plano resonator. The influence of the ratio between the cavity mode and pump beam area on the laser performances and laser spectra at various output powers has been investigated. The experimental results have shown that the cleavage technique can become a practical and effective method to obtain the microchip laser medium easily and directly. [ABSTRACT FROM AUTHOR]

Investigates some of the properties of strained-layer quantum-well heterostructure (SL-QWH) current injection lasers to evaluate the potential of the strained-layer lasers. Cross section of SL-QWH laser grown by molecular beam epitaxy; Room temperature emission spectra for SL-QWH laser; Degradation of a SL-QWH laser during 1000 h of operation.

Studies the growth and characterization of lattice-matched calcium compound growth in gallium arsenide substrates. Application of lattice-matched insulators on semiconductors; Details on the experiment; Discussion on the results of the study.

Presents a study which focused on copper spin orientation in titanium(barium strontium)praseodymium copper[sub2]oxygen[sub7]. Methods; Results; Discussion.

Analyzes the growth of single crystals of the superconductor YBa[sub2]Cu[sub3]O[suby] from a mixture of solid phase YBa[sub2]Cu[sub3]O[suby] and liquid phase silver. Details of the process involved in growing high J[subc] superconducting yttrium (Y)-123 crystals from a mixture of stoichiometric Y-123 and Ag[sub2]; Description of stoichiometric Y-123 powder; Comparison between single and cube-like crystals; Effect of the addition of Ag[sub2]O on the stoichiometric Y-123 powder.

Presents a study which examined heteroepitaxial growth of zinc selenide (ZnSe) on a gallium arsenide/silicon (GaAs/Si) substrate. Examination of the crystallinity of ZnSe/GaAs/Si; Relative relationship of thermal mismatch and lattice mismatch of ZnSe to GaAs; Conclusion.

Presents information on a study which discussed the growth of zinc selenide (ZnSe) epitaxial layers on (111) silicon (Si) substrates by low-pressure metalorganic chemical vapor deposition. Measurement of the electrical properties of the ZnSe epilayers; Investigation of the surface morphology and cross section of the ZnSe layers by scanning electron microscopy; Procedure undergone by the Si substrate prior to growth.

Presents a study which examined the relationship of the performance of a double-heterostructure (DH) laser with various polishing techniques used for gallium arsenide (GaAs) substrates preparation. Description of the process of polishing; Fabrication of broad-area laser diodes; Results for DH lasers with GaAs active regions.

Demonstrates the usefulness of a low-temperature cleaning technique for the gallium arsenide surface. Reason for the interest of research groups in the epitaxial growth of lattice-matched Ca[subx]Sr[sub1-x]F[sub2] on gallium arsenide and in the formation of epitaxial iGaAs/(Ca,Sr)F[sub2]/GaAs structures; Auger spectrum of the GaAs surface; Factors that allow the ambient transfer of the GaAs substrate.