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Heteroepitaxial growth of ZnSe on (111) Si by low-pressure metalorganic chemical vapor deposition.
- Source :
- Journal of Applied Physics; 10/15/1988, Vol. 64 Issue 8, p4241, 3p
- Publication Year :
- 1988
-
Abstract
- Presents information on a study which discussed the growth of zinc selenide (ZnSe) epitaxial layers on (111) silicon (Si) substrates by low-pressure metalorganic chemical vapor deposition. Measurement of the electrical properties of the ZnSe epilayers; Investigation of the surface morphology and cross section of the ZnSe layers by scanning electron microscopy; Procedure undergone by the Si substrate prior to growth.
- Subjects :
- ZINC selenide
EPITAXY
CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7637448
- Full Text :
- https://doi.org/10.1063/1.341292