Search

Terahertz time-domain spectroscopy is shown to provide a convenient and rapid means to measure the conductivity of individual layers in semiconductor heterostructures such as terahertz quantum cascade lasers. By modeling the complex transmission at terahertz frequencies, the electron density and the in-plane momentum scattering time of the active regions and doped contact layers were determined for both GaAs/AlGaAs and InGaAs/InAlAs epilayers. The measured temperature dependence of the electron scattering rate revealed the significance of impurity and LO phonon scattering. The implications for laser operation at room temperature are discussed by considering the changes in absorption and resonant tunneling current with temperature. [ABSTRACT FROM AUTHOR]

Photoconductive detectors are convenient devices for detecting pulsed terahertz radiation. We have optimized Fe+ ion-damaged InP materials for photoconductive detector signal to noise performance using dual-energy doses in the range from 2.5×1012 to 1.0×1016 cm-2. Ion implantation allowed the production of semiconducting materials with free-carrier lifetimes between 0.5 and 2.1 ps, which were measured by optical pump terahertz probe spectroscopy. The time resolved photoconductivity of the detector substrates was acquired as a function of time after excitation by 2 nJ pulses from a laser oscillator. These data, when combined with a deconvolution algorithm, provide an excellent spectral response correction to the raw photocurrent signal recorded by the photoconductive detectors. [ABSTRACT FROM AUTHOR]

Reports the transient effects in amorphous silicon thin-film transistors (TFTs) occurring upon switch-on and switch-off. Application of amorphous silicon TFTs; Thermal equilibrium between the injected free electrons and the shallow tail states; Effects of band bending in the space-charge region.

Presents a study that observed a common failure symptom which was noticed during lifetesting of channeled-substrate-planar (CSP) laser diodes from various wafers. Device structure revealed on the polished surface of a working doide laser after staining; Method used to prepare samples for cathodoluminescence analysis; Lifetest data for CSP laser diodes.

This article presents a method to estimate the rotational velocity of a cylindrical plasma from its two-dimensional images by an extended use of the Fourier-rectangular function transform, which was proposed to analyze the structure and dynamics of a cylindrical plasma [K. Yamasaki e t a l., J. Appl. Phys. 126 , 043304 (2019)]. The proposed method is applied to tomography images of plasmas produced in a linear cylindrical device and succeeds in obtaining the radial distribution of rotational velocity and its fluctuations, providing an interesting finding, that is, the existence of flow modulation associated with m = 1 mode fluctuations. [ABSTRACT FROM AUTHOR]

Radiation-induced conductivity (RIC) of polyethyleneterepfthalate and polypiromellitimide has been studied experimentally and numerically in a broad time range from some microseconds to seconds at 103 K. It has been established that the charge carrier transport is dispersive with a low value of the dispersion parameter α (0.08–0.12). We have suggested a direct method of determination of the frequency factor of the Rose–Fowler–Vaisberg (RFV) model, which has been parameterized using computer simulations by the trial-and-error method. The main concern is a critical analysis of the existing theories of geminate recombination. It has been shown that the traditional RFV model is well suited to describe the RIC in studied polymers even at 103 K if due corrections to the notion of a free charge carrier and a non-Langevin bimolecular recombination have been made. The problem of a space charge field due to beam electrons stopped in a polymer sample, which is especially important at low temperatures, has been accounted for but not fully explained. [ABSTRACT FROM AUTHOR]

Analytical instruments or scientific instruments are indispensable for scientific research and industry. The analytical instruments require a detector that converts physical quantities to be measured (measurands) to electric signals. This Tutorial describes the basics of quantum and thermal detectors, the operation principles of superconductor detectors, and the ultimate performance of state-of-art analytical instruments with superconductivity. We still face fundamental issues, such as the classical Fano factor, the relation between energy gap and mean carrier creation energy, quasiparticle dynamics, and the intermediate state in the middle of superconducting transition; and engineering issues, such as the small sensitive area and the spatially nonuniform response. Nevertheless, enormous efforts have matured superconductor detectors, which enables us to solve the inherent problems of conventional analytical instruments. As an example of the analytical results, we describe x-ray spectroscopy and mass spectrometry at our institute by using three detector types: superconductor tunnel junction, transition edge sensor, and superconductor strip. Microwave kinetic inductance and metallic magnetic calorimetric types are also described. The analytical results may contribute to a wide range of fields, such as dentistry, molecular biology, energy-saving society, planetary science, and prebiotic organic molecules in space. [ABSTRACT FROM AUTHOR]

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power semiconductor devices. However, fabrication of GaN devices often relies on harsh etch processes, which can leave an etch damage layer, limiting final device performance. In this work, an isotropic atomic layer etching (ALE) process involving SF6 plasma and trimethylaluminium [Al(CH3)3] is presented for the controlled etching of GaN, which reduces oxygen and carbon contamination while smoothing the surface. The ALE chemistry was first examined with density functional theory. A comparison between proposed thermal and plasma-driven reactions is made by implementing Natarajan–Elliott analysis, highlighting that the plasma process is a good candidate for GaN ALE. Saturation was experimentally confirmed for both ALE half-cycles at 150 and 300 °C, with etch rates of 0.31 ± 0.01 and 0.40 ± 0.02 nm/cycle, respectively. Analysis of the films post-ALE shows that the RMS roughness of the films decreases from 2.6 ± 0.1 to 1.9 ± 0.1 nm after 25 nm of etching at 300 °C, in agreement with a previously developed curvature-dependent smoothing model. Taken together, this ALE process enables accurate GaN thickness tuning, surface cleaning, and surface smoothing, allowing for further development of GaN devices. [ABSTRACT FROM AUTHOR]

This work presents first experiments toward the development of continuously renewable (extrudable) pebble-based carbon rods for use as plasma-facing components in extreme steady-state plasma flux environments. The primary envisioned application of this work is a first wall that can survive long-term in future magnetic fusion power reactors while also improving recovery of the reactor fuel (tritium and deuterium atoms). Bench tests applying extreme steady-state front-surface heat loads of up to 50 MW/m2 are presented. Continuous pebble rod front-surface recession and intact pebble recovery are successfully demonstrated, at a rate of order 0.2 cm/s. Numerical simulations of the pebble rod front-surface recession are able to match observations reasonably well, indicating that the recession mechanism can be understood as occurring due to pebble thermal expansion and resulting shock and cracking of the inter-pebble binder. Tests of the pebble rod extrusion demonstrate that friction between the rods and the stainless steel extrusion channel is tolerably low (<50 N for the expected channel length) over a wide range of temperatures. Front-surface outgassing rates below 1000 Torr L/s/m2 are achieved, believed to be sufficiently low for use in magnetic fusion reactors. Initial parametric scans over pebble rod size and binder fraction to vary front-surface recession rates are presented. [ABSTRACT FROM AUTHOR]

The response of MgO periclase to irradiation is investigated by means of molecular dynamics simulations, mimicking irradiation by Frenkel pairs accumulation. Both the calculated lattice and volume swellings, which refer, respectively, to the lattice and total volume changes reproduce well the experimental measures. The two diverge at around 0.2 dpa, above which lattice and volume swellings follow separate trends. Below this value, dislocation loops nucleate from point defects clusters, built up by progressive aggregation of both magnesium and oxygen interstitials. Very small 1 2 ⟨110⟩ loops lying in {001} planes and made of (MgO)6 interstitials could be characterized. They serve as seeds for the subsequent growth of dislocation loops in all three {110}, {001}, and {111} planes, which then follows a sublinear law. The 1 2 ⟨110⟩ loops lying in the {011} planes become dominant as loop diameters increase beyond 15 nm. Above 0.2 dpa, we observe (i) the relative decrease of lattice swelling mainly because the very dense dislocations loops recombine and stabilize into less dense dislocation forests and, concomitantly, (ii) the fast increase of volume swelling caused by the occurrence of significant voids of up to 32 vacancies. [ABSTRACT FROM AUTHOR]

Silicon photonics is a promising technology for the fabrication of dense photonic chips, thanks to the very mature silicon industry. The direct epitaxial growth of III–V lasers on silicon is one of the main challenges for the realization of compact and robust mid-infrared sensors based on photonic integrated circuits. The crystal defects arising from this heteroepitaxial growth affect the laser performance and, therefore, need to be mitigated but also studied to better understand their impact on the laser operation. Here, we studied the effect of threading dislocations on laser performance by comparing the series of GaSb-based diode lasers grown on native GaSb and Si substrates with different numbers of quantum wells (nQW) in their active zones. As expected, the laser threshold currents are higher in the case of diode lasers on Si, and they rapidly vary with nQW. Still, the lowest threshold current densities are achieved with nQW = 1 for both substrates. With the help of a theoretical gain model, we attribute these results to the fact that dislocations create non-radiative recombination but do not introduce additional optical losses. This work allows a better understanding of the origin of performance degradation and the decision to be made regarding the heterostructure design. [ABSTRACT FROM AUTHOR]

Thermal laser epitaxy (TLE) is a novel film growth technique capable of fabricating ultrapure films of many material systems. For growing oxide films with TLE, the impact of source oxidation on the evaporation rate is a central issue, which, however, has not yet been explored systematically. Here, we report a systematic, experimental study of the role of source oxidation on source evaporation at various oxygen pressures and source temperatures in TLE. The volatility of the oxidized metal sources affects the source evaporation rate. When the oxidized metal source is more volatile than the metal, the source evaporation rate increases with the oxygen supply. In a strongly oxidizing environment, stable oxides with lower volatility tend to form and decrease the evaporation rate of the source. Increasing the laser power—and thereby the source temperature—tends to prevent the formation of stable oxides. At even higher source temperatures, the metal vapor pressure can dominate the oxide vapor pressure even in a high oxygen pressure atmosphere. A power-law relation between deposition rate and oxidizing gas pressure is found in case the formation and evaporation of volatile oxides of the elemental source material dominates the total evaporation process. The exponent of this law is a measure of the relevance of source oxidation for the evaporation of the source. [ABSTRACT FROM AUTHOR]

We investigated the effects of thermal cycle annealing (TCA) at high temperatures on the defect density and morphology of GaAs epilayers grown on (001) Si substrates. Several types of TCA combined with dislocation filter layers (DFLs) were introduced to reduce the defect densities in the GaAs grown on Si substrates. Plan-view transmission electron microscopy shows that the defect density of a 2.7 μm-thick GaAs/Si template with optimized TCA and DFLs is 1.4 × 107 cm−2, lower than a 1.1 μm-thick GaAs/Si template by a factor of 40. The surface roughness of the optimized GaAs/Si template is 1.3 nm after insertion of the DFLs. Additionally, optically pumped InP quantum dot micro-disk lasers (MDLs) were fabricated on these GaAs/Si templates to evaluate the template quality. Room-temperature continuous-wave lasing of 1.5 μm-diameter MDLs was observed, with ultralow lasing thresholds ranging from 0.5 to 2 μW. [ABSTRACT FROM AUTHOR]

Energy-dispersive x-ray diffraction of thermographic phosphors has been explored as a complementary temperature diagnostic to visible phosphor thermometry in environments where the temperature-dependent optical luminescence of the phosphors is occluded. Powder phosphor samples were heated from ambient to 300 ° C in incremental steps and probed with polychromatic synchrotron x rays; scattered photons were collected at a fixed diffraction angle of 3.9 °. Crystal structure, lattice parameters, and coefficients of thermal expansion were calculated from the diffraction data. Of the several phosphors surveyed, YAG:Dy, ZnO:Ga, and GOS:Tb were found to be excellent candidates for diffraction thermometry due to their strong, distinct diffraction peaks that shift in a repeatable and linear manner with temperature. [ABSTRACT FROM AUTHOR]

We made numerical calculations of the radiation-induced conductivity by computing current densities, carrier concentrations, and internal electric fields in a disordered sample biased by constant applied voltage under a pulsed or step-function irradiation in a large-signal regime. For this purpose, we used the multiple trapping model featuring an exponential trap distribution with the dispersion parameter α. Calculations of radiation-induced conductivity were done with traditional simplifications (1D-analysis, one-carrier polymer, diffusion currents neglected, and non-injecting electrodes). The nonlinear effects accompanying the large-signal radiation-induced conductivity, such as an internal field variation, the bimolecular recombination, and the charge carrier extraction by electrodes, have been consistently accounted for. Numerical analysis agrees satisfactorily with the results of previously published analytical calculations. [ABSTRACT FROM AUTHOR]

We demonstrate cascaded, mid-infrared light-emitting diodes with quantum dot based active regions. Cascading is achieved through highly reverse-biased AlInAsSb tunnel junctions that serve to connect the successive InGaSb quantum dot active regions. Temperature-dependent characterization of the output irradiance as a function of the current and voltage indicates that the cascade architecture has minimal leakage currents in contrast to earlier single-stage devices and provides carrier recycling with a concomitant increase in irradiance. The results show that cascaded architectures can be applied to quantum dot platforms and that the quantum efficiency of the active region limits the overall device efficiency. [ABSTRACT FROM AUTHOR]

We report on the study of step-graded AlGaN transition layers (TLs) in metalorganic chemical vapor deposition-grown GaN HEMT-on-silicon toward improving the breakdown field while minimizing buffer-induced current dispersion. The transition layers include three AlGaN epi-layers of 75%, 50%, and 25% Al-content, downgraded from bottom to top. The growth temperature and carbon doping are varied independently to assess the transition layer's role in reducing current collapse and leakage current. We observe that the introduction of High Temperature (HT) AlGaN increases the lateral but decreases the vertical leakage, the latter being attributed to the reduction of V-pit density. Temperature-dependent data indicate that the increased lateral (mesa) leakage current in HT AlGaN layers is due to space charge limited current, the activation energy of which yields the positions of the defect states within the bandgap. The increase in mesa leakage current in HT AlGaN layers is attributed to the formation of point defects such as oxygen in nitrogen site (ON) and VGa–ON complexes. The introduction of C-doping in the top AlGaN transition layer with 25% Al-content helps reduce lateral leakage in both mesa and 3-terminal configurations. The combination of HT AlGaN (75% Al-content) with C-doped AlGaN (25% Al-content) is found to be the optimal TL design that yielded a minimum buffer-induced current dispersion with a 65% channel recovery when the substrate was swept to −300 V and back; moreover, it also enabled a vertical breakdown field of 2.05 MV/cm defined at 1 A/cm2 for a buffer thickness of 1.65 μm. [ABSTRACT FROM AUTHOR]

Progress in computing architectures is approaching a paradigm shift: traditional computing based on digital complementary metal-oxide semiconductor technology is nearing physical limits in terms of miniaturization, speed, and, especially, power consumption. Consequently, alternative approaches are under investigation. One of the most promising is based on a "brain-like" or neuromorphic computation scheme. Another approach is quantum computing using photons. Both of these approaches can be realized using silicon photonics, and at the heart of both technologies is an efficient, ultra-low power broad band optical modulator. As silicon modulators suffer from relatively high power consumption, materials other than silicon itself have to be considered for the modulator. In this Perspective, we present our view on such materials. We focus on oxides showing a strong linear electro-optic effect that can also be integrated with Si, thus capitalizing on new materials to enable the devices and circuit architectures that exploit shifting computational machine learning paradigms, while leveraging current manufacturing infrastructure. This is expected to result in a new generation of computers that consume less power and possess a larger bandwidth. [ABSTRACT FROM AUTHOR]

Using two rigorous electromagnetic approaches, we study plasmon scattering in two-dimensional systems and show that plasmon amplification is possible in the presence of dc currents. Two scenarios are considered: plasmon scattering from an interface between different two-dimensional channels and plasmon reflection from electric contacts of arbitrary thickness. In each case, the effect of a dc current of the plasmon reflection and transmission coefficients and the plasmon power are both quantified. A resonant system is studied where plasmon roundtrip gain may exceed unity, showing the possibility of plasmon generation. [ABSTRACT FROM AUTHOR]

The dramatic improvements in synchrotron light sources across the world imply tremendous opportunities for interface science. In this Perspective, we describe a variety of current scattering and spectroscopic techniques with an eye toward how these will evolve, particularly with the advent of diffraction-limited sources. We also note the importance of in situ and operando methods for both understanding interface creation and interface evolution in different environments. As interfaces are often where critical processes occur, whether in regard to energy/chemical/materials/quantum information science, understanding the utility of these x-ray techniques will be of considerable importance to the cultivation of next-generation scientists. [ABSTRACT FROM AUTHOR]

Vanadium oxides (VxOy) are classic "smart functional materials" used in a wide array of thermochromic, electronic, and catalytic applications. Specifically, vanadium dioxide (VO2) class nanomaterials are of enormous interest due to their unique first order reversible metal-insulator phase transition (MIT) behavior accompanied by a structural phase transition, inducing dramatic changes in electrical and optical properties with large lattice deformation. To date, a plethora of reports exemplifying the MIT characteristics of VO2, synthetic methods of VO2, and modulating VO2 phase transition temperatures (Tc) have been published. In this Tutorial Review, we present an overview on the fundamentals of the VO2 band structure and principles of MIT and outline various reported synthetic approaches for VO2 thin films, including dimensionally oriented VO2 nanostructures. Discussion on recent trends in VO2 applications, challenges in VO2 synthesis, and future perspectives are also elaborated in detail. [ABSTRACT FROM AUTHOR]

We analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers. [ABSTRACT FROM AUTHOR]

We have investigated radiation-induced conductivity (RIC) in several low mobility common polymers as well as two with excellent charge transport characteristics. Irradiations were pulsed and continuous with constant dose rates from microseconds to seconds. Experiments were done in the small-signal mode at a relatively high electric field. To interpret the results, we performed numerical calculations based on the conventional as well as the modified Rose-Fowler-Vaisberg (RFV) models. Also, to accommodate the time-of-flight and deep trapping effects, we used an analytic formula describing strongly nonequilibrium dispersive transport at high electric fields in the presence of deep trapping. As a result, several long-standing RIC issues have been resolved. A crucial role of pulsed irradiations for polymer parameterization in terms of the RFV model has been demonstrated. [ABSTRACT FROM AUTHOR]

Aerotaxy, a recently invented aerosol-based growth method for nanostructures, has been shown to hold great promise in making III-V nanowires more accessible for cheap mass-production. Aerotaxy nanowire surface structure and chemistry, however, remains unexplored, which is unfortunate since this can influence (opto)electronic properties. We investigate the surfaces of aerotaxy grown GaAs nanowires using synchrotron based high resolution X-ray photoelectron spectroscopy and high resolution atomic force microscopy. We observe that increasing the concentration of the p-type dopant diethylzinc to very high levels during nanowire growth significantly changes the surface morphology and leads to a strong suppression of native surface oxide formation. Our findings indicate that up to 1.8 monolayers of Zn are present on the nanowire surface after growth. Finally, we find that this also influences the Fermi level pinning of the surface. We suggest that Zn present on the surface after growth could play a role in the strongly hindered oxidation of the III-V compound when exposed to air. The aerotaxy nanowires generally exhibit a round cross section, while a significant smoothening of the surface morphology along the nanowire appears for very high nominal doping levels likely as a result of slight reshaping during growth in the presence of Zn. Given that surface oxide and a rough morphology can be detrimental to nanowire electrical and optical performance, the ability to reduce them as a side effect of dopant introduction will benefit future applications. Finally, the observed hindering of oxidation during air transport can allow for reliable post-growth processing in separate systems. [ABSTRACT FROM AUTHOR]

The influence of the atom source operating parameters on the structural and optical properties of In x Ga 1 − x N/GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy is investigated. Electron microscopy and photoluminescence spectroscopy reveal a change of the NW tip morphology and an enhancement of the local indium incorporation with increasing nitrogen flux. Tuning the density ratio of atomic-to-excited molecular nitrogen to lower values minimizes the point defect density, which results in a decrease of the non-radiative recombination rate as demonstrated by a combination of continuous wave and time-resolved photoluminescence spectroscopy. [ABSTRACT FROM AUTHOR]

The sensitivity of a low-noise superconducting transition edge sensor (TES) is determined by the thermal conductance of the support structure that connects the active elements of the device to the heat bath. Low-noise devices require conductances in the range 0.1 to 10 pW K − 1 and so have to rely on diffusive phonon scattering in long, narrow, amorphous SiN x legs. We show that it is possible to manufacture and operate TESs having short, ballistic low-dimensional legs (cross section 0.5 × 0.2 μ m) that contain multi-element phononic interferometers and ring resonators. These legs transport heat in effectively just 5 elastic modes at the TES's operating temperature (< 150 mK), which is close to the quantised limit of 4. The phononic filters then reduce the thermal flux further by frequency-domain filtering. For example, a micromachined 3-element ring resonator reduced the flux to 19% of a straight-legged ballistic device operating at the quantised limit and 38% of a straight-legged diffusive reference device. This work opens the way to manufacturing TESs where performance is determined entirely by filtered, few-mode, ballistic thermal transport in short, low-heat capacity legs, free from the artifacts of two level systems. [ABSTRACT FROM AUTHOR]

New boron subnitride B50N2 has been synthesized by crystallization from the B–BN melt at 5GPa, and its structure has been refined using Rietveld analysis. B50N2 crystallizes in the tetragonal space group P-4n2 with unit cell parameters a0=8.8181(2) Å and c0=5.0427(10) Å . Quasi-hydrostatic compression of two boron subnitrides, B50N2 and B13N2, has been studied up to 30 GPa at room temperature in a diamond-anvil cell using synchrotron X-ray diffraction. No pressure-induced phase transitions have been observed. A fit of experimental p-V data to the Murnaghan equation of state yielded B50N2 and B13N2 bulk moduli of 167(2) and 205(2) GPa, respectively, with fixed first bulk modulus pressure derivative of 4.0. [ABSTRACT FROM AUTHOR]

The electrical properties of HfxAlyO compound dielectric films and the HfxAlyO/InGaAs interface are reported for various dielectric film compositions. Despite the same trimethylaluminum (TMA) pre-deposition treatment, dispersion in accumulation and capacitance-voltage (C-V) hysteresis increased with hafnium content. Different kinds of border traps were identified as being responsible for the phenomena. After anneal, the density of states in the HfxAlyO/InGaAs interface varied quite weakly with dielectric film composition. The optimal composition for obtaining high inversion charge density in metal oxide semiconductor gate stacks is determined by a tradeoff between leakage and dielectric constant, with the optimum atomic cation ratio ([Hf]/[Al]) of ~1. [ABSTRACT FROM AUTHOR]

Turbostratic carbon nanotubes (CNTs) and nanofibers (CNFs) are synthesized by chemical vapor deposition using titania nanoparticle catalysts, and a quantitative lift-off model is developed to explain CNT and CNF growth. Micron-scale long turbostratic CNTs and CNFs were observed when acetylene is utilized as a carbon feedstock, and an alumina substrate was incorporated to improve the homogeneity of catalyst distribution. Turbostratic CNTs/CNFs are always found attached to nanoparticle corners, in the absence of the graphitic cage that is typically observed with metal nanoparticle-mediated growth. The observed morphology in turbostratic CNTs/CNFs supports a model in which several layers of graphene lift off from high-curvature corners of the titania nanoparticle catalysts. This model explains a key feature, which differentiates the growth of turbostratic CNTs/CNFs via non-metallic nanoparticles from growth using standard metal nanoparticle catalysts. The observed CNT/CNF growth and the accompanying model can impact the assessment of other metal-oxide nanoparticle catalysts, with the findings here contributing to a metal-free synthesis of turbostratic CNTs/CNFs. [ABSTRACT FROM AUTHOR]

Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about -0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. [ABSTRACT FROM AUTHOR]

The surface treatment of ultralow-κ dielectric layers by exposure to atomic oxygen is presented as a potential mechanism to modify the chemical composition of the dielectric surface to facilitate copper diffusion barrier layer formation. High carbon content, low-κ dielectric films of varying porosity were exposed to atomic oxygen treatments at room temperature, and x-ray photoelectron spectroscopy studies reveal both the depletion of carbon and the incorporation of oxygen at the surface. Subsequent dynamic water contact angle measurements show that the chemically modified surfaces become more hydrophilic after treatment, suggesting that the substrates have become more "SiO2-like" at the near surface region. This treatment is shown to be thermally stable up to 400 °C. High resolution electron energy loss spectroscopy elemental profiles confirm the localised removal of carbon from the surface region. Manganese (≈1 nm) was subsequently deposited on the modified substrates and thermally annealed to form surface localized MnSiO3 based barrier layers. The energy-dispersive X-ray spectroscopy elemental maps show that the atomic oxygen treatments facilitate the formation of a continuous manganese silicate barrier within dense low-k films, but significant manganese diffusion is observed in the case of porous substrates, negatively impacting the formation of a discrete barrier layer. Ultimately, the atomic oxygen treatment proves effective in modifying the surface of non-porous dielectrics while continuing to facilitate barrier formation. However, in the case of high porosity films, diffusion of manganese into the bulk film remains a critical issue. [ABSTRACT FROM AUTHOR]

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 µm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from -0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesa and outgoing in the direction normal to the sample surface. [ABSTRACT FROM AUTHOR]

In developing photovoltaic devices with high efficiencies, quantitative determination of the carrier loss is crucial. In conventional solar-cell characterization techniques, however, photocurrent reduction originating from parasitic light absorption and carrier recombination within the light absorber cannot be assessed easily. Here, we develop a general analysis scheme in which the optical and recombination losses in submicron-textured solar cells are evaluated systematically from external quantum efficiency (EQE) spectra. In this method, the optical absorption in solar cells is first deduced by imposing the anti-reflection condition in the calculation of the absorptance spectrum, and the carrier extraction from the light absorber layer is then modeled by considering a carrier collection length from the absorber interface. Our analysis method is appropriate for a wide variety of photovoltaic devices, including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4], zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells, and provides excellent fitting to numerous EQE spectra reported earlier. Based on the results obtained from our EQE analyses, we discuss the effects of parasitic absorption and carrier recombination in different types of solar cells. [ABSTRACT FROM AUTHOR]

We present rigorous analytical and computational models to study the plasma-waves in a gated-bilayer system present in a double-channel high electron mobility transistor. By analytically deriving the dispersion relations, we have identified the optical and acoustic modes in such systems. We find that the presence of the metal gate selectively modifies the optical plasmons of an ungatedbilayer, while the acoustic plasmons remain largely unchanged. Analysis shows that these modified optical plasmons could be advantageous for resonant and non-resonant plasma-wave devices. The paper further serves to verify our analytical formulae using a full-wave hydrodynamic numerical solver, based on finite difference time domain algorithm. Using the solver, we examine these modes in the gated/ungated bilayers under a plane wave excitation. We observe that, most incident power couples to the optical mode for such an excitation. Nevertheless, acoustic modes can also be excited, if the discontinuity dimensions are optimized accordingly. These observations are also explained using 2D field-plots for the first time, thus providing intuitive understanding of the plasmon excitation in the bilayers. [ABSTRACT FROM AUTHOR]

The temperature dependence of the spectral features in the vicinity of the direct band edge extonic transitions of Mo1-xWxSe2 layered crystals were measured in the temperature range of 25-295K using a piezoreflectance (PzR) technique. The direct band edge extonic transition energies of Mo1-xWxSe2 were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown tunable extonic transition continuously tuned with the W composition. The parameters that describe the temperature variation of the energies and broadening function of the excitonic transitions are evaluated and discussed. [ABSTRACT FROM AUTHOR]

W/C/W tri-layer thin film samples have been deposited on c-Si substrates in a home-built Ion Beam Sputtering system at 1.5 × 10-3 Torr Ar working pressure and 10mA grid current. The trilayer samples have been deposited at different Ar+ ion energies between 0.6 and 1.2 keV for W layer deposition and the samples have been characterized by specular and non-specular grazing incidence X-ray reflectivity (GIXR) measurements. By analyzing the GIXR spectra, various interface parameters have been obtained for both W-on-C and C-on-W interfaces and optimum Ar+ ion energy for obtaining interfaces with low imperfections has been found. Subsequently, multilayer W/C samples with 5-layer, 7-layer, 9-layer, and 13-layer have been deposited at this optimum Ar+ ion energy. By fitting the specular and diffused GIXR data of the multilayer samples with the parameters of each interface as fitting variables, different interface parameters, viz., interface width, in-plane correlation length, interface roughness, and interface diffusion have been estimated for each interface and their variation across the depth of the multilayers have been obtained. The information would be useful in realizing W/C multilayers for soft X-ray mirror application in the <100 Å wavelength regime. The applicability of the "restart of the growth at the interface" model in the case of these ion beam sputter deposited W/C multilayers has also been investigated in the course of this study. [ABSTRACT FROM AUTHOR]

In the paper, the photoluminescence (PL) measurements, current-voltage-temperature (I-V-T) measurements, space charge techniques (C-V and deep level transient spectroscopy (DLTS)), and photocurrent spectral characteristics have been applied to investigate defects in p-Si/MgO/ n-Zn1-xMgxO heterojunction (HJ). The HJ structure was grown on p-type Si (111) substrate with resistivity equal to 0.1 Ω cm by the plasma-assisted molecular beam epitaxy technique. A radiofrequency cell was used for the generation of oxygen plasma. PL spectrum let us determine the Mg content ~10%. Besides the excitonic Zn0.9Mg0.1O line, the PL spectrum also contains green and yellow emission bands indicating the presence of defect states in the investigated structures. I-V measurements reveal the rectifying properties of the HJ and the current thermally activated with a trap with the activation energy equal to 0.42 eV. DLTS studies yield the majority trap of the activation energy 0.42 eV, confirming the result obtained from the I-V measurements. It was found that the defects related to this trap have a point like behaviour. A spectral characteristic of the photocurrent shows that the p-Si/MgO/n-Zn1-xMgxO HJ may be applied as a photodiode operating within the wavelength range of 300 nm-1100 nm. The dark current transport and photocurrent spectrum were explained using the Anderson model of a HJ. [ABSTRACT FROM AUTHOR]

Local probe methods can be used to measure nanoscale surface conductivity, but some techniques including nanoscale four point probe rely on at least two of the probes forming the same low resistivity non-rectifying contact to the sample. Here, the role of probe shank oxide has been examined by carrying out contact and non-contact I V measurements on GaAs when the probe oxide has been controllably reduced, both experimentally and in simulation. In contact, the barrier height is pinned but the barrier shape changes with probe shank oxide dimensions. In non-contact measurements, the oxide modifies the electrostatic interaction inducing a quantum dot that alters the tunneling behavior. For both, the contact resistance change is dependent on polarity, which violates the assumption required for four point probe to remove probe contact resistance from the measured conductivity. This has implications for all nanoscale surface probe measurements and macroscopic four point probe, both in air and vacuum, where the role of probe oxide contamination is not well understood. [ABSTRACT FROM AUTHOR]

In the currently popular organic-inorganic hybrid perovskite solar cells, the slowness of the charge recombination processes is found to be a key factor for contributing to their high efficiencies and high open circuit voltages, but the underlying recombination mechanism remains unclear. In this work, we investigate the bimolecular recombination (BR) and the trap-assisted monomolecular recombination (MR) in meso-structured perovskite solar cells under steady state working condition, and try to reveal their roles on determining the device performance. Some interfacial effects such as the injection barriers at the selective contacts are examined as well. Based on the macroscopic device modeling, the recombination resistance-voltage (Rrec-V) and the current density-voltage (J-V) curves are calculated to characterize the recombination mechanism and describe the device performance, respectively. Through comparison with the impedance spectroscopy extracted Rrec data, it is found that under the typical BR reduction factor and deep trap densities observed in experiments, the MR dominates the charge recombination in the low voltage regime, while the BR dominates in the high voltage regime. The short circuit current and the fill factor could be reduced by the significant MR but the open circuit voltage is generally determined by the BR. The different electron injection barriers at the contact can change the BR rate and induce different patterns for the Rrec-V characteristics. For the perovskites of increased band gaps, the Rrec's are significantly enhanced, corresponding to the high open circuit voltages. Finally, it is revealed that the reduced effective charge mobility due to the transport in electron and hole transporting material makes the Rrec decrease slowly with the increasing voltage, which leads to increased open circuit voltage. [ABSTRACT FROM AUTHOR]

We investigated the optical properties of ultrathin MoS2 films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS2 film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS2 thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d2 ΰ(E)/dE2 ), we determined several critical point energies. The d2 ΰ(E)/dE spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points. [ABSTRACT FROM AUTHOR]

We have investigated the pinning and depinning of "virtual" domain walls in planar magnetic nanowires. Such virtual walls are created when a conventional domain wall becomes annihilated at a narrow gap between two segments of a discontinuous nanowire. By using focused magneto-optical Kerr effect magnetometry to study the repeatability of their depinning, we show that virtual walls exhibit single-mode depinning distributions, characterized by remarkably low, sub-Oersted standard deviations. This is in stark contrast to the depinning of domain walls from conventional notch-shaped defects, which typically exhibit multi-mode depinning field distributions spanning tens to hundreds of Oersteds. High-resolution magnetic soft x-ray microscopy measurements are used to reveal that this high level of repeatability is the result of a simple mediated-nucleation process, which decouples the depinning mechanism from structure of the initially injected DWs. Our work serves as an example of how the complex and dynamical stochastic behaviors exhibited by domain walls in nanowires can be controlled. [ABSTRACT FROM AUTHOR]

Martensitic polycrystalline Ni48.8Mn31.4Ga19.8 Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed. [ABSTRACT FROM AUTHOR]

Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al2O3/In0.53Ga0.47As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al2O3/In0.53Ga0.47As interface move towards the expected direction as observed from HAXPES measurements. The In0.53Ga0.47As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al2O3/In0.53Ga0.47As interface and suggest an interface state density increasing towards the In0.53Ga0.47As valence band edge. [ABSTRACT FROM AUTHOR]

A diffraction grating is a spatial filter causing sound waves or optical waves to reflect in directions determined by the frequency of the waves and the period of the grating. The classical grating equation is the governing principle that has successfully described the diffraction phenomena caused by gratings. However, in this work, we show experimental observation of the so-called sub-harmonic diffraction in acoustics that cannot be explained by the classical grating equation. Experiments indicate two physical phenomena causing the effect: internal scattering effects within the corrugation causing a phase shift and nonlinear acoustic effects generating new frequencies. This discovery expands our current understanding of the diffraction phenomenon, and it also makes it possible to better design spatial diffraction spectra, such as a rainbow effect in optics with a more complicated color spectrum than a traditional rainbow. The discovery reveals also a possibly new technique to study nonlinear acoustics by exploitation of the natural spatial filtering effect inherent to an acoustic diffraction grating. [ABSTRACT FROM AUTHOR]

The temperature dependence of the spectral features in the vicinity of the direct band edge of mixed-crystals Mo(SxSe1-x)2 solid solutions is measured in the temperature range of 25-295K by using piezoreflectance (PzR). The near band-edge excitonic transition energies of Mo(SxSe1-x)2 solid solutions were determined accurately from a detailed line-shape fit of the PzR spectra. The near band-edge excitonic transition energies were found to vary smoothly with the increase of S content x, indicating that the natures of the direct band edges of Mo(SxSe1-x)2 solid solutions are similar. The temperature dependences of near band edge transition energies were analyzed using Bose-Einstein expressions in the temperature range from 25 to 295 K. The parameters that described the temperature variation of the energies and broadening function of the excitonic transitions were evaluated and discussed. [ABSTRACT FROM AUTHOR]

Dynamics of Si(100)-oxidation processes at the Si/SiO2 interface and in the SiO2 region are investigated focusing on SiO and Si emissions from the interface and the following incorporation into the SiO2 and/or substrate. Classical molecular dynamics (MD) simulations with variable charge interatomic potentials are performed to clarify these atomic processes. By incorporating oxygen atoms, two-folded Si atoms are formed after structural relaxation at the interface and are emitted as SiO molecules into SiO2. The energy barrier of the SiO emission is estimated to be 1.20 eV on the basis of the enthalpy change in an MD simulation. The emitted SiO molecule is incorporated into the SiO2 network through a Si-O rebonding process with generating an oxygen vacancy. The energy barrier of the SiO incorporation is estimated to be 0.79-0.81 eV. The elementary process of oxygen vacancy diffusion leading to the complete SiO incorporation is also simulated, and the energy barriers are found to be relatively small, 0.71-0.79 eV. The energy changes of Si emissions into the substrate and SiO2 are estimated to be 2.97-7.81 eV, which are larger than the energy barrier of the SiO emission. This result suggests that, at the ideally flat Si/SiO2 interface, the SiO emission into the SiO2 region occurs prior to the Si emission, which is consistent with previous theoretical and experimental studies. The above mentioned typical atomic processes are successfully extracted from some (or one) of MD simulations among many trials in which a statistical procedure is partly employed. Our results give a unified understanding of Si oxidation processes from an atomistic point of view. [ABSTRACT FROM AUTHOR]

Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine the band offsets in a heterojunction made of InP quantum dots on Si. The valence and conduction band offset was found to be 0.12 eV and 0.35 eV, respectively, with a type-II band lineup. Deviation from theoretical prediction and previously published reports on quasi similar systems have been found and analyzed on the basis of the effect of strain, surface energy, shift in the electrostatic dipole and charge transfer at the interface. The carrier transport mechanisms along with different device parameters in the heterojunction have been studied for a temperature range of 180-300 K. This heterojunction is found to behave as an efficient infrared photodetector with an ON/OFF ratio of 21 at a reverse bias of 2V. The corresponding rise and decay time was found to be 132 ms and 147 ms, respectively. [ABSTRACT FROM AUTHOR]

The electronic structure, magnetic, and optical properties in cubic crystalline phase of Zr1–xTMxO2 (TM=V, Mn, Fe, and Co) at x=6.25% are studied using density functional theory with the Generalized Gradient Approximation and the modified Becke-Johnson of the exchange-correlation energy and potential. In our calculations, the zirconia is a p-type semiconductor and has a large band gap. We evaluated the possibility of long-range magnetic order for transition metal ions substituting Zr. Our results show that ferromagnetism is the ground state in V, Mn, and Fe-doped ZrO2 and have a high value of energy in Mn-doped ZrO2. However, in Co-doped ZrO2, antiferromagnetic ordering is more stable than the ferromagnetic one. The exchange interaction mechanism has been discussed to explain the responsible of this stability. Moreover, it has been found that the V, Mn, and Fe transition metals provide half-metallic properties considered to be the leading cause, responsible for ferromagnetism. Furthermore, the optical absorption spectra in the TM -doped cubic ZrO2 are investigated. [ABSTRACT FROM AUTHOR]