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The structural and optical characteristics of quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy were investigated using high resolution x-ray diffraction, absorption, photoluminescence and photoreflectance spectroscopy. The results showed that several transitions related to impurities and a free exciton feature were present, indicating that the exciton binding energy was smaller than predicted.

The optical and structural characteristics of ternary alloy AlxGa1-xAs/AlAs multiple-quantum-well structures were investigated. The results showed that the direct energy gap was proportional to the AlAs mole fraction and the band offset ratio was determined by the composition of the alloy. In addition, exciton absorption bleaching occurred in the material.

Room temperature-induced emission in optically pumped narrow ZnSe/ZnSxSe1-x multiple-quantum-well structures was investigated. The results showed that the structures featured an optical excitation threshold of 300 kW per square centimeter at 300 K. At low temperature, an unsaturated gain coefficient of theorder of 5 x 10 squared was observed.

Presents the results of a study which investigated the radiative recombination processes of the free-carrier plasma confined in Ga[0.47]In[0.53]As/Al[sub0.48]In[sub0.52]As multiple-quantum well structures on indium phosphide substrate. Adaptation of space-resolved luminescence; Theoretical analysis of the optical gain spectra; Discussion on the low-excitation-intensity experiments.

Presents a study that investigated the correlation between the structural and optical properties of polydispersed quantum dots in glass matrix. Method of the study; Results and discussion; Conclusion.