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Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy
- Source :
- Journal of Applied Physics. Jan 15, 1993, Vol. 73 Issue 2, p898, 7 p.
- Publication Year :
- 1993
-
Abstract
- The structural and optical characteristics of quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy were investigated using high resolution x-ray diffraction, absorption, photoluminescence and photoreflectance spectroscopy. The results showed that several transitions related to impurities and a free exciton feature were present, indicating that the exciton binding energy was smaller than predicted.
- Subjects :
- Semiconductors -- Research
Radiative transfer -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 73
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14134167