Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy

Authors :: Rinaldi, R.
Cingolani, R.
Ferrara, M.
Tapfer, L.
Kunzel, H.
Hase, A.
Source :: Journal of Applied Physics. Jan 15, 1993, Vol. 73 Issue 2, p898, 7 p.
Publication Year :: 1993
Abstract: The structural and optical characteristics of quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy were investigated using high resolution x-ray diffraction, absorption, photoluminescence and photoreflectance spectroscopy. The results showed that several transitions related to impurities and a free exciton feature were present, indicating that the exciton binding energy was smaller than predicted.

Subjects :: Semiconductors -- Research
Radiative transfer -- Research
Physics

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