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Presents information on a study which evaluated the feasibility of suppressing silicide formation by incorporating nitrogen into the chemically vapor deposited tungsten film prior to subsequent high-temperature processing. Methodology of the study; Results and discussion; Conclusion.

Deals with the interactions of thin titanium films with substrates under rapid annealing. Information on a proposed self-aligned silicide technology using titanium silicon[sub2] for metal-oxide-semiconductor devices; Details on the standards salicide process; Discussion on the experiment and result of the study.

Examines the formation and high-temperature stability of cobalt silicide films on a silicon dioxide substrate. Details of the experimental procedures; Sheet resistance of the cobalt disilicide film; Effect of the presence of excess silicon in the silicide film.

Presents a study which analyzed the effect of post-silicidation annealing on TiSi[sub2]/p[sup+]-n silicon junctions. Implication of forward-bias current characteristics; Capability of post-silicidation annealing; Situation in which diffusion B from the p-channel source/drain region into TiSi[sub2] occurs.

Presents a study which measured the range of distributions of [sup11]boron[sup+] in polycrystalline cobalt, titanium, CoSi[sub2] and TiSi[sub2] targets by secondary ion mass spectrometry. Method used in forming silicided p[sub+]/n junctions displaying good current-voltage characteristics; Details on preparing targets of cobalt and titanium; Comparison of the depth profiles of [sup11]boron[sup+] implanted into cobalt, silicon, titanium, CoSi[sub2] and TiSi[sub2].