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The generation of cw Terahertz radiation from photomixing in low-temperature grown GaAs is limited by the thermal load for single emitters. We propose a new heat sinking scheme based on high thermal conductivity, transparent crystalline heat spreaders as diamond in direct contact with the active zone. A first working device based on recessed electrodes is demonstrated and has a significant power dissipation capability of more than 0.75 W (average). The electrical and terahertz characteristics are analyzed. [ABSTRACT FROM AUTHOR]

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature- and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10-8-2.1011 cm-3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers. [ABSTRACT FROM AUTHOR]