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In this paper, we have studied the effect on the structure and magnetic properties of partial Pd substitution by Gd in Fe–Pd thin films of nominal composition Fe56Pd44−xGdx (x = 1, 3, 5, and 7), deposited onto Si(100) and Si(100)/SiO2 substrates by thermal evaporation. Several techniques contribute to the characterization of their microstructure and magnetic properties, such as x-ray diffraction (XRD), scanning electron microscopy, alternating gradient field magnetometry, and magnetic force microscopy (MFM). X-ray diffraction shows that the as-deposited films are either amorphous or contain a disordered FePd phase, depending on the film thickness. The transformation of disordered fcc-FePd into ordered fct-FePd has been induced by a heat treatment at 530 °C for 4 h. The addition of gadolinium leads to a reduction in the coercivity as a consequence of the emergence of soft phases and of the progressive reduction of the fct-FePd phase, which is primarily responsible for the observed maze magnetic domains. The exchange coupling between the soft phase and the hard fct-FePd phase is demonstrated by first-order reversal curves (FORCs). [ABSTRACT FROM AUTHOR]

The current focus in Autonomous Experimentation (AE) is on developing robust workflows to conduct the AE effectively. This entails the need for well-defined approaches to guide the AE process, including strategies for hyperparameter tuning and high-level human interventions within the workflow loop. This paper presents a comprehensive analysis of the influence of initial experimental conditions and in-loop interventions on the learning dynamics of Deep Kernel Learning (DKL) within the realm of AE in scanning probe microscopy. We explore the concept of the "seed effect," where the initial experiment setup has a substantial impact on the subsequent learning trajectory. Additionally, we introduce an approach of the seed point interventions in AE allowing the operator to influence the exploration process. Using a dataset from Piezoresponse Force Microscopy on PbTiO3 thin films, we illustrate the impact of the "seed effect" and in-loop seed interventions on the effectiveness of DKL in predicting material properties. The study highlights the importance of initial choices and adaptive interventions in optimizing learning rates and enhancing the efficiency of automated material characterization. This work offers valuable insights into designing more robust and effective AE workflows in microscopy with potential applications across various characterization techniques. [ABSTRACT FROM AUTHOR]

Lead-free piezoelectric (K, Na)NbO3 (KNN) is considered one of the promising candidates for the replacement of Pb(ZrxTi1−x)O3. Several studies underlined the issue of K and Na volatility with increasing deposition temperatures, leading to high leakage currents in thin films, which still represents a major drawback for applications. This paper shows how epitaxial growth with concomitant preferred orientation of KNN films on niobium-doped strontium titanate (Nb:STO) depends on growth temperature and substrate strain. A preferred out-of-plane polar (001) orientation of KNN is obtained at high temperatures (>600 °C), while (100) orientation is dominant for lower ones. The (001) orientation is forced out-of-plane due to the sizeable in-plane stress derived from a negative lattice mismatch of pseudo-cubic KNN with respect to the underlying cubic (001) Nb:STO substrate. Moreover, we show that K-Na deficiency and high leakage of epitaxial KNN films deposited at high temperatures are accompanied by the appearance of a pattern of orthogonal spontaneous ferroelectric domains aligned to the [100] and [010] directions of Nb:STO. This pattern, visible in secondary electron microscopy, piezoforce response microscopy, and conductive atomic force microscopy images, is uncorrelated to the surface morphology. Supported by reciprocal space mapping by x-ray diffraction, this phenomenon is interpreted as the result of strain relaxation via ferroelectric domain formation related to K-Na deficient films displaying a sizable and increasing compressive strain when grown on Nb:SrTiO3. Our findings suggest that strain engineering strategies in thin films could be used to stabilize specific configurations of piezo- and ferroelectric domains. [ABSTRACT FROM AUTHOR]

Wrinkling, creasing, and folding are frequent phenomena encountered in biological and man-made bilayers made by thin films bonded to thicker and softer substrates often containing fibers. Paradigmatic examples of the latter are the skin, the brain, and arterial walls, for which wiggly cross sections are detected. Although experimental investigations on corrugation of these and analog bilayers would greatly benefit from scaling laws for prompt comparison of the wrinkling features, neither are they available nor have systematic approaches yielding to such laws ever been provided before. This gap is filled in this paper, where a uniaxially compressed bilayer formed by a thin elastic film bonded on a hyperelastic fiber-reinforced substrate is considered. The force balance at the film–substrate interface is here analytically and numerically investigated for highly mismatched film–substrates. The onset of wrinkling is then characterized in terms of both the critical strain and its corresponding wavenumber. Inspired by the asymptotic laws available for neo-Hookean bilayers, the paper then provides a systematic way to achieve novel scaling laws for the wrinkling features for fiber-reinforced highly mismatched hyperelastic bilayers. Such novel scaling laws shed light on the key contributions defining the response of the bilayer, as it is characterized by a fiber-induced complex anisotropy. Results are compared with finite element analyses and also with outcomes of both existing linear models and available ad hoc scalings. Furthermore, the amplitude, the global maximum and minimum of ruga occurring under increasing compression spanning the wrinkling, period doubling, and folding regimes are also obtained. [ABSTRACT FROM AUTHOR]

The holy grail of achieving efficient operation of infrared (IR) rectennas continues to be the realization of a high performance rectifier. In this paper, we have fabricated metal–insulator–metal (MIM) diodes based on TiO2, ZnO, and NiO thin films using shadow mask evaporation, photolithography, and sputtering. The electron affinities of oxides have been measured by a combination of variable angle spectroscopic ellipsometry and x-ray photoelectron spectroscopy, as well as deduction from the extraction of metal/oxide barrier heights of Fowler–Nordheim tunneling plots. Our results confirm a low value for the electron affinity of NiOx of ∼2.1–2.5 eV, which correlates with the high zero-bias dynamic resistance (RD0) of ∼500 kΩ of an associated MIM diode. These values render NiOx to be unsuitable for use in a rectenna device. Better performance has been observed from diodes based on TiO2 and ZnOx films. The best rectification performance was achieved for a Au/2.6 nm ZnOx/Cr diode, scaled down to 1 μm2 device area, showing a zero-bias dynamic resistance of RD0 = 71 kΩ, zero-bias responsivity β0 = 0.28 A/W, and a coupling efficiency of ηc = 2.4 × 10−5% for rectification at 28.3 THz. The main significance of this study is that it employs a methodology whereby key parameters of the MIM stack are derived from physical measurements, which are then used to assist in the fitting of electrical current–voltage data to produce a reliable appraisal of diode performance in an IR rectenna. [ABSTRACT FROM AUTHOR]

Polycrystalline thin films are widely used for devices and energy-related applications, such as power electronics, solar cells, and thermal management of devices. In many cases, large-scale crystallization during thin-film growth is challenging, so columnar grains are often found in metal and semiconductor thin films. These rough columnar grain boundaries may also have different phonon specularities from that for typically smoother top/bottom film surfaces. A simple analytical model to separately treat these boundaries and interfaces for phonon scattering is currently unavailable, although the in-plane thermal transport is critical to heat spreading within thin-film devices. In this paper, we extend the effective medium formulation from three-dimensional polycrystalline bulk materials to columnar-grained thin films. The model predictions agree well with those given by frequency-dependent phonon Monte Carlo simulations, considering varied phonon specularity at top/bottom film surfaces and grain-boundary phonon transmissivity. The analytical model is further used to analyze the existing data on polycrystalline ZnO thin films with columnar grains. [ABSTRACT FROM AUTHOR]

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the B i 2 S e 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable. [ABSTRACT FROM AUTHOR]

HfO 2 -based thin films have raised considerable interest in ferroelectric memory devices due to their thickness scalability and process compatibility with CMOS. Stress exhibits a significant influence on ferroelectric polarization in HfO 2 -based films. However, the effect of stress has yet to be clarified despite numerous efforts, and there has been a lack of systematic review to collate and discuss this effect. This paper briefly introduces how stress is characterized in HfO 2 -based polycrystalline films as basis. Then, the process in which stress affects ferroelectricity is carefully discussed. The paper subsequently elaborates both the effects of out of plane stress and in plane stress. Furthermore, the interaction between stress and other factors is presented. Finally, the up-to-date research on the effect of stress are summarized, and several further research challenges for researchers are provided. Given the ubiquitous stress during the chip manufacturing process, a detailed summary of the stress effect has technological implications for processing and applications of HfO 2 -based thin films. [ABSTRACT FROM AUTHOR]

Herein, a prototype nonvolatile bent ferroelastic domain wall (DW) memory based on extension–retraction of DWs in a top electrode/bent ferroelastic DWs/bottom electrode architecture is demonstrated and the effects of mechanical condition, electrical condition, and the material parameter on ferroelastic DWs in PbTiO3 ferroelectric thin films are studied by phase field modeling. Misfit strain can be used to drive the bend of DWs in PbTiO3 thin film, resulting in a change of ferroelastic domain size, bending degree, and conductivity. Stable and reversible switching of DWs between the extendible state with high conductivity and the retractile state with low conductivity can be realized, resulting in an apparent resistance change with a large ON/OFF ratio of >102 and an excellent retention characteristic. The extension and retraction speed, corresponding to data writing speed, can be adjusted by the electric field magnitude and distributions. The memory speed increases by 5% under a homogeneous electric field and 6% under an inhomogeneous probing electric field, after the buildup of space charges in a ferroelectric thin film, and the fastest memory speed is obtained at tip potential φ = 1.8. Moreover, polarization orientations of a and c domains separated by bent ferroelastic DWs do not affect memory performance. This paper can guide the development of new ferroelectric domain wall memory. [ABSTRACT FROM AUTHOR]

In this paper, we investigated the dependence of dynamic hysteresis on the electric field amplitude E0 and the frequency f in organic ferroelectric copolymer polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films prepared by a spin-coating method on fluorine-doped tin oxide conductive glass. Three stages can be observed of the hysteresis area vs the field strength E0. In stage I of low E0 values, the area ⟨ A ⟩ dependent on E0 follows the law of ⟨ A ⟩ ∝ E 0 1.92795 , whereas the diverse distribution of the area ⟨ A ⟩ with frequency f is found. In stage II of the intermediate E0 values, ⟨ A ⟩ ∝ E 0 β is not applicable owing to collective contributions between 180° domain and chiral domain, while a relation of ⟨ A ⟩ ∝ f − 0.18636 can be deduced, a fascinating characteristic distinguishing from the nonlinear relations of the inorganics in this section. In stage III of high E0 values, the scaling law is ⟨ A ⟩ ∝ f 0.08447 E 0 0.49394 where the chiral domain is active. The positive β in the law of ⟨ A ⟩ ∝ f α E 0 β illustrates that a growing number of chiral domains in P(VDF-TrFE) can keep pace with the variation of E0. Especially, the negative α in the transition zone, resembling some inorganics under low electric fields, probably indicates 180° domain reversal failing to follow with the alternating velocity of the increasing periodic electric field. [ABSTRACT FROM AUTHOR]

In this paper, the field-induced residual ferroelectricity in antiferroelectric lead zirconate thin films has been studied by impedance measurements together with a hyperbolic law analysis, which permits us to extract the different contributions to the material's complex permittivity. By measuring the Rayleigh coefficient α r , it appears that the residual ferroelectricity is considerably enhanced when the sample has been previously exposed to an electric field close to the antiferroelectric to ferroelectric transition field. This indicates that a part of the material remains ferroelectric after the antiferroelectric–ferroelectric backward transition, which constitutes an additional contribution to polarization. Consequently, a higher domain wall density and mobility can be observed. Measurements after exposition to thermal treatment show that this ferroelectric response is metastable. [ABSTRACT FROM AUTHOR]

In the present study, soft x-ray optical properties of off-stoichiometric boron carbide thin films are investigated, and the structure and chemical composition of the film is analyzed using angle dependent x-ray reflectivity and x-ray photoelectron spectroscopy techniques. Energy dependent soft x-ray reflectivity measured at a fixed grazing angle of 1.5° is used to determine the optical constants in the boron K edge region by applying the Kramers–Kronig technique. The measured optical constants show near edge fine features corresponding to σ* and π* resonances. The electronic transitions corresponding to σ* resonance cause a 40%–75% increase in the delta value in the above boron K edge region. The π* transitions corresponding to off-stoichiometric nature of the boron carbide are observed in the absorption spectra near ∼192.7 eV. Details of the measured soft x-ray optical properties of the off-stoichiometric boron carbide thin film are discussed. [ABSTRACT FROM AUTHOR]

The realization of nanoscale devices largely depends on our ability to control and manipulate interfacial interactions and, thus, understanding of the mechanisms of surface/interface instabilities. In this work, theoretically as well as technologically important and distinct two thermodynamic systems, which are exposed to (isobaric) and isolated from (isochoric) external body forces and surface tractions, are formulated by using irreversible thermodynamics in combination with the generalized variational method. The starting point for the present formulation closely follows up the Fowler and Guggenheim [Statistical Thermodynamics (University Press, Cambridge, 1952)] interpretation of the Planck inequality [Über Prinzip Vermehrung Entropie: Ann. Phys. Series 2(32), 462 (1887)] for isothermal reversible and irreversible (natural) infinitesimal changes in heterogeneous systems (multi-phase and multi-component). By combining this fundamental principle with the interlink between the dissipation function and global internal entropy production postulates, two distinct sets of governing equations for the surface drift-diffusion flux as well as the rate of evaporation/condensation and/or the growth/recrystallization of amorphous solid thin films are obtained for isochoric and isobaric systems. The role of Eshelby's energy-momentum tensor in the generalized potential for the interface displacement is found to differ (opposite in sign) for isochoric and isobaric systems. To demonstrate the importance of these sign conflicts, two sets of computer experiments are performed on isochoric and isobaric systems. They showed us that the elastic strain energy density contribution to the generalized driving force for surface drift-diffusion alone favoring flat and smooth surfaces in isobaric systems regardless of the sign of the uniaxial stress (healing), rather than causing the surface roughness and even catastrophic crack initiation as the case in internally strained isochoric systems. Computer simulations allowed us to track down the dynamical behavior of test modules by furnishing surface and strain energy variations, combined with the Global Helmholtz free change, which indicates the existence of two regimes: initial smooth surface undulations followed up by the rather chaotic crack formation and propagation stage at the middle of the thin film supported by the stiff substrate. In this study, we mainly focused on the development kinetics of "Stranski–Krastanow" island-type morphology, initiated by the nucleation route rather than the surface roughening scheme. The physicomathematical model, which is based on the irreversible thermodynamics treatment of surfaces and interfaces with singularities [T. O. Ogurtani, J. Chem. Phys. 124, 144706 (2006)], furnishes us to have autocontrol on otherwise free-motion of the triple junction contour line between the substrate and the droplet without presuming any equilibrium dihedral contact (wetting) angles at edges. We have also demonstrated the formation of the Stranski–Krastanow (SK)-type doublet islanding (quantum dots) as a stationary nonequilibrium state in an epitaxially strained thin flat droplet on a rigid substrate by introducing the wetting potential—invoked by the quantum confinement—into the scenario and carefully selecting the system parameters (size and shape) for the isochoric system represented by [Ge/Si (100)]. It has been also shown that on the contrary to common perceptions, the Stranski–Krastanow islands are in genuine stationary nonequilibrium states in the sense of Prigogine if one invokes proper free-moving boundary conditions at triple junctions deduced from the irreversible thermodynamics rather than ad hoc periodic or reflecting constrains at the edges. [ABSTRACT FROM AUTHOR]

HfxZr1-xO2 thin films exhibit a high dielectric constant at the morphotropic phase boundary (MPB), which is beneficial for high-k dielectric applications. To minimize the equivalent oxide thickness, the effects of various HZO thicknesses and compositions on the MPB were investigated. In general, HZO films with a thickness of 10 nm exhibit a high dielectric constant owing to MPB at a composition of Hf:Zr = 3:7. However, it was confirmed that composition optimization is required for HZO films with thicknesses below 10 nm to achieve an MPB. As the HZO thickness decreases, a low Zr ratio is favorable for achieving a high dielectric constant (>45) by MPB, which is expected to be due to the large impact of the interface that consequently induces a change in phase formation. Results of electrical and x-ray diffraction analyses confirmed that a high dielectric constant was obtained when the ratio of the tetragonal phase increased and that the tetragonal phase was well formed at a low Zr ratio in the 6 nm-thick HZO film. Therefore, the optimal ratio between the tetragonal and orthorhombic phases should be determined to achieve MPB in HZO thin films, and this can be achieved by composition optimization. [ABSTRACT FROM AUTHOR]

We are reporting on high quality epitaxial thin films of [Pb(Mg1/3Nb2/3)O3]0.67-(PbTiO3)0.33 [PMN-PT (67/33)]. These films were deposited on (001) oriented, vicinal SrTiO3 single crystal substrates, using 1 mol. % niobium-doped Pb(Zr0.52,Ti0.48)O3 (Nb-PZT) as an interfacial layer. The functional properties of the epitaxial PMN-PT (67/33) thin films were investigated as a function of the layer thickness of the Nb-PZT layer. The deposited hetero-structures are perovskite phase pure and fully (001)-oriented. The variation in Nb-PZT interfacial layer thickness results in an increasing trend change of the in-plane lattice parameter of that layer, which in turn causes a decrease in the c/a ratio of the PMN-PT film on top. The most noticeable effect related to this is a decrease in built-in-bias (imprint) voltage. Thus, the built-in bias can be tuned by changing the interfacial layer thickness. The ferroelectric capacitor properties are found to be most stable for the thinnest interfacial layers under a high number (108) of switching cycles. [ABSTRACT FROM AUTHOR]

Performing propagating spin-wave spectroscopy of thin films at millikelvin temperatures is the next step toward the realization of large-scale integrated magnonic circuits for quantum applications. Here, we demonstrate spin-wave propagation in a 100 nm -thick yttrium-iron-garnet (YIG) film at temperatures down to 45 mK , using stripline nanoantennas deposited on YIG surface for electrical excitation and detection. The clear transmission characteristics over the distance of 10 μ m are measured and the extracted spin-wave group velocity and the YIG saturation magnetization agree well with the theoretical values. We show that the gadolinium-gallium-garnet (GGG) substrate influences the spin-wave propagation characteristics only for the applied magnetic fields beyond 75 mT , originating from a GGG magnetization up to 62 kA / m at 45 mK. Our results show that the developed fabrication and measurement methodologies enable the realization of integrated magnonic quantum nanotechnologies at millikelvin temperatures. [ABSTRACT FROM AUTHOR]

In this paper, we proposed and numerically demonstrated a giant enhancement up to in both fo 10 8 rward and backward propagation of the second harmonic generation by combining the high-quality factor cavities of the bound states in the continuum and the excellent nonlinear optical crystal of lithium niobate. The enhancement factor is defined as the ratio of the second harmonic signal generated by the structure (lithium niobate membrane with Si grating) divided by the signal generated by the lithium niobate membrane alone. Furthermore, a minimum interaction time of 350 ps is achieved despite the etching less lithium niobate membrane with a conversion efficiency of 4.77 × 10−6. The origin of the enhancements is linked to the excitation of a Fano-like shape symmetry-protected mode that is revealed by finite-difference time-domain simulations. The proposed platform opens the way to a new generation of efficient integrated optical sources compatible with nano-photonic devices for classical and quantum applications. [ABSTRACT FROM AUTHOR]

Coherent nonlinear optical μ -spectroscopy is a frequently used tool in modern material science as it is sensitive to many different local observables, which comprise, among others, crystal symmetry and vibrational properties. The richness in information, however, may come with challenges in data interpretation, as one has to disentangle the many different effects like multiple reflections, phase jumps at interfaces, or the influence of the Guoy-phase. In order to facilitate interpretation, the work presented here proposes an easy-to-use semi-analytical modeling Ansatz, which bases upon known analytical solutions using Gaussian beams. Specifically, we apply this Ansatz to compute nonlinear optical responses of (thin film) optical materials. We try to conserve the meaning of intuitive parameters like the Gouy-phase and the nonlinear coherent interaction length. In particular, the concept of coherence length is extended, which is a must when using focal beams. The model is subsequently applied to exemplary cases of second- and third-harmonic generation. We observe a very good agreement with experimental data, and furthermore, despite the constraints and limits of the analytical Ansatz, our model performs similarly well as when using more rigorous simulations. However, it outperforms the latter in terms of computational power, requiring more than three orders less computational time and less performant computer systems. [ABSTRACT FROM AUTHOR]

Ferroelectricity in thin films of HfO2 has been the subject of extensive studies in materials science as well as device applications. The emergence of ferroelectricity is attributable to the orthorhombic phase (Pca21) of HfO2, stabilized in the films by metal-element doping, strains from substrates and electrode films, and oxygen deficiency. Recently, ferroelectricity has been reported in nanolaminates of HfO2 with other oxides such as ZrO2 and Al2O3, implying that nanolaminates are another effective way to bring about ferroelectricity in HfO2. However, the mechanism of orthorhombic phase stabilization in nanolaminates is not fully understood. In this study, we demonstrated that ferroelectricity emerges in nanolaminates consisting of undoped HfO2 and perovskite SrHfO3 deposited on Sn-doped In2O3 bottom electrodes, when the thickness of HfO2 layers was ≥6 nm. For nanolaminates in which the thickness of the HfO2 layers was ≤5 nm, ferroelectricity was remarkably suppressed due to Sr-incorporation into the HfO2 layers at the interface. In those nanolaminates, the crystal orientations of HfO2 grains were well aligned throughout the HfO2 layers, indicating that the HfO2 layers grew in a pseudo-coherent manner. This study aids to understand the stabilization of the ferroelectric orthorhombic phase in nanolaminates in terms of their structural properties. [ABSTRACT FROM AUTHOR]

In this work, we report the growth of high-quality BiSe thin films deposited on Si (111) substrates at different temperatures via pulsed laser deposition. We observe poor sample quality at a low substrate temperature (T s u b = 175 ° C), and as the substrate temperature increases, the crystallinity of the samples increases. At a substrate temperature, T s u b = 250 ° C, BiSe Raman modes (modes centered around 97.6 and 112.9 cm − 1 ) start to emerge with less intensity and evolve with the increase in the substrate temperature and at T s u b = 325 ° C closely match with that of single crystals. These modes correspond to the vibrations of Se-atoms from the Bi 2 Se 3 quintuple layers and Bi-atoms from the Bi-bilayer. By carefully investigating the structural properties and the Raman modes of BiSe thin films at each substrate temperature, we provide an optimal condition to grow high-quality thin films of BiSe by pulsed laser deposition. [ABSTRACT FROM AUTHOR]

Piezoelectric thin films are particularly difficult to model at the grain scale. Moreover, this problem is sparsely experimentally documented due to the lack of adequate methods. Here, an original methodology is proposed to study the behavior of single grains during in situ biasing. Pb(Zr,Ti)O3 films have been evaluated thanks to an in situ biasing x-ray diffraction technique performed on a synchrotron source with a sub-micronic x-ray beam. Small capacitors have been biased with DC voltage between 0 and ±20 V and at each step of bias a set of spotty Debye rings have been recorded. By selecting an appropriate region of interest, the evolution of a single grain peak has been followed. The fine analysis of these peaks allows to calculate the effective piezoelectric coefficient d33,eff, the proportion of each domain variants, the tetragonality inside each grain, as well as their evolution during the electrical biasing. A higher heterogeneity in samples with morphotropic phase boundary composition is observed. This study contributes to a better understanding of the local behaviors in piezo/ferroelectric polycrystalline films and in the improvement of their performance for different applications. [ABSTRACT FROM AUTHOR]

The resistivity size effect in the ordered intermetallic CuTi compound is quantified using in situ and ex situ thin film resistivity ρ measurements at 295 and 77 K, and density functional theory Fermi surface and electron–phonon scattering calculations. Epitaxial CuTi(001) layers with thickness d = 5.8–149 nm are deposited on MgO(001) at 350 °C and exhibit ρ vs d data that are well described by the classical Fuchs and Sondheimer model, indicating a room-temperature effective electron mean free path λ = 12.5 ± 0.6 nm, a bulk resistivity ρo = 19.5 ± 0.3 μΩ cm, and a temperature-independent product ρoλ = 24.7 × 10−16 Ω m2. First-principles calculations indicate a strongly anisotropic Fermi surface with electron velocities ranging from 0.7 × 105 to 6.6 × 105 m/s, electron–phonon scattering lengths of 0.8–8.5 nm (with an average of 4.6 nm), and a resulting ρo = 20.6 ± 0.2 μΩ cm in the (001) plane, in excellent agreement (7% deviation) with the measurements. However, the measured ρoλ is almost 2.4 times larger than predicted, indicating a break-down of the classical transport models. Air exposure causes a 6%–30% resistivity increase, suggesting a transition from partially specular (p = 0.5) to completely diffuse surface scattering due to surface oxidation as detected by x-ray photoelectron spectroscopy. Polycrystalline CuTi layers deposited on SiO2/Si substrates exhibit a 001 texture, a grain width that increases with d, and a 74%–163% larger resistivity than the epitaxial layers due to electron scattering at grain boundaries. The overall results suggest that CuTi is a promising candidate for highly scaled interconnects in integrated circuits only if it facilitates liner-free metallization. [ABSTRACT FROM AUTHOR]

We present an analytically solvable theory of Bardeen-Cooper-Schrieffer-type superconductivity in good metals which are confined along one of the three spatial directions, such as thin films. Closed-form expressions for the dependence of the superconducting critical temperature T c as a function of the confinement size L are obtained, in quantitative agreement with experimental data with no adjustable parameters. Upon increasing the confinement, a crossover from a spherical Fermi surface, which contains two growing hollow spheres corresponding to states forbidden by confinement, to a strongly deformed Fermi surface, is predicted. This crossover represents a new topological transition, driven by confinement, between two Fermi surfaces belonging to two different homotopy classes. This topological transition provides a mechanistic explanation of the commonly observed non-monotonic dependence of T c upon film thickness with a maximum which, according to our theory, coincides with the topological transition. [ABSTRACT FROM AUTHOR]

Heavy metal/ferromagnet interfaces in systems with perpendicular magnetic anisotropy (PMA) hosts chiral Néel wall with the assistance of interfacial Dzyaloshinskii–Moriya interaction (iDMI). We have investigated field induced domain wall motion in the creep regime to estimate the effective iDMI strength, D eff of sputter-deposited Ta/Pt/Co/Pt and Ta/Pt/Co/Au/Pt thin films that exhibit PMA. Two similar Pt/Co interfaces on either side of the Co layer in the Ta/Pt/Co/Pt system lead to a small D eff with a negative sign that supports the Néel type domain wall of right-handed chirality. Ultrathin Au layers of different thicknesses have been deposited at the top Co/Pt interface to introduce asymmetry around the Co layer and control the D eff . Here, two interfaces (Pt/Co and Au/Co) of opposite iDMI polarity have been chosen to invert the domain wall chirality to the left-handed chirality instead of the right-handed chirality found in the Ta/Pt/Co/Pt system. [ABSTRACT FROM AUTHOR]

3D droplet-based bioprinting technology is an innovative and time-saving additive manufacturing method, which enables spatial patterning of biological materials and biochemical and living cells for multiple clinical and research applications. Understanding the criteria that control droplet spreading behavior during droplet impact is of great importance in controlling printing resolution and optimizing the printing performance. In this experimental work, the spreading of 3D printed cell-laden droplets was studied with side and bottom view images. The droplets contain 1 × 10 7 cells/ml input cell concentration and corresponding Φ = 0.52 % cell volume fraction and impact onto a flat hydrophilic substrate, a pre-printed droplet, and a pre-printed thin liquid film. The cell-laden droplet impact morphology, the maximum spreading factor, and the cell distribution under different printing conditions (89 < W e < 365 , 174 < R e < 414) in a 3D bioprinting process were characterized. It was found that on the hydrophilic flat substrate, the cells homogeneously distributed into a disk structure. The maximum spreading factor, β max , can be well described by the correlation formulas based on the energy balance and volume conservation. A power-law scaling formula was found to describe the maximum spreading in terms of the Weber number for cell-laden droplet impact on both pre-printed droplets and thin liquid films, where β max ∝ W e 0.25 . Input cell concentration, up to 1 × 10 7 cells/ml, was found to have negligible effect on the maximum droplet spreading factor in a 3D bioprinting process. [ABSTRACT FROM AUTHOR]

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

Ferroelectric (Hf,Zr)O2 thin films have attracted increased interest from the ferroelectrics community and the semiconductor industry due to their ability to exhibit ferroelectricity at nanoscale dimensions. The properties and performance of the ferroelectric (Hf,Zr)O2 films generally depend on various factors such as surface energy (e.g., through grain size or thickness), defects (e.g., through dopants, oxygen vacancies, or impurities), electrodes, interface quality, and preferred crystallographic orientation (also known as crystallographic texture or simply texture) of grains and/or domains. Although some factors affecting properties and performance have been studied extensively, the effects of texture on the material properties are still not understood. Here, the influence of texture of the bottom electrode and Hf0.5Zr0.5O2 (HZO) films on properties and performance is reported. The uniqueness of this work is the use of a consistent deposition process known as Sequential, No-Atmosphere Processing (SNAP) that produces films with different preferred orientations yet minimal other differences. The results shown in this study provide both new insight on the importance of the bottom electrode texture and new fundamental processing-structure–property relationships for the HZO films. [ABSTRACT FROM AUTHOR]

The spin Seebeck effect was studied in thin films of hexagonal ferrites of W-type SrCo2−xZnxFe16O27 with x = 0, 1, and 2 and Z-type with the composition Sr3Co2Fe24O41. The present data were compared with the previously obtained data on Y-type Ba2Zn2−xCoxFe12O22 with x = 0 and 2. Our work showed that the SSE signal can also be generated in materials with complicated crystal and magnetic structures. Hexaferrites with the magnetic easy plane were selected except for uniaxial W-type with x = 2, for which the highest saturated SSE 0.144 μV/K was observed; however, magnetic field above 1 T must be applied to achieve saturation. For low field application, hexaferrites with easy magnetization in ab-plane are more suitable, namely, Y-type with x = 2 or W-type with x = 1. SSE is suppressed in Co-substituted hexaferrites due to the random distribution of Co among various sites. Therefore, the Co cations interfere with the long-range magnetic ordering and diminish the spin-wave propagation. Additional suppression of SSE might be invoked by the higher magnetic anisotropy of the Co-substituted hexaferrites, which opens a gap in the magnon spectrum and, thus, reduces the contribution of lower energy magnons with longer diffusion length. [ABSTRACT FROM AUTHOR]

The laser-generated surface acoustic wave (LSAW) nondestructive testing (NDT) technique is a promising method to characterize the mechanical properties of thin films. In this study, based on the thermoelastic mechanism, a finite element method (FEM) is put forward to simulate the LSAW in the film/substrate structure, and the effect of the temporal and spatial distribution of the Gaussian pulse laser on the Rayleigh-type SAW signals is revealed. For the SiO2 and low dielectric constant (low-k) dense Black Diamond™ (SiOC:H, BD) films with the thickness of 500 and 1000 nm, the typical displacement waveforms of SAW at a series of probing points along the propagation direction are obtained. By analyzing the full width at half maximum (FWHM) of the signal, the optimal NDT experimental conditions for laser are determined with the minimum possible pulse rising time and the linewidth less than 10 μm. Based on the FEM simulation result, the LSAW NDT experiment is carried out and the dispersion curve of SAW is calculated to characterize Young's modulus of the SiO2 and low-k samples. It is found that the experimental results are in good agreement with the simulation results. This study verifies the validity of FEM simulation of LSAW in layered structures containing thin film and that the laser parameters determined by FEM fit perfectly in characterizing the mechanical properties of thin films. [ABSTRACT FROM AUTHOR]

Magnetically ordered insulators are of key interest for spintronics applications, but most of them have not yet been explored in depth regarding their magnetic properties, in particular with respect to their dynamic response. We study the static and dynamic magnetic properties of epitaxially strained γ -Fe2O3 (maghemite) thin films grown via pulsed-laser deposition on MgO substrates by SQUID magnetometry and cryogenic broadband ferromagnetic resonance experiments. SQUID magnetometry measurements reveal hysteretic magnetization curves for magnetic fields applied both in- and out of the sample plane. From the magnetization dynamics of our thin films, we find a small negative effective magnetization in agreement with a strain induced perpendicular magnetic anisotropy. Moreover, we observe a non-linear evolution of the ferromagnetic resonance-linewidth as a function of the microwave frequency and explain this finding with the so-called slow relaxor model. We investigate the magnetization dynamics and non-linear damping mechanisms present in our samples as a function of frequency and temperature and in particular, observe a sign change in the effective magnetization from the transition of the magnetic anisotropy from a perpendicular easy axis to an easy in-plane anisotropy for reduced temperatures. Its nonlinear damping properties and strain-induced perpendicular anisotropy render γ -Fe2O3 an interesting material platform for spintronics devices. [ABSTRACT FROM AUTHOR]

Despite the fact that zinc oxide is a well-known transparent oxide, several recent studies on "black" ZnO have renewed its potential for photocatalytic applications. We report on the control of oxygen deficiency in ZnO thin films grown at 300 °C on c-cut sapphire single-crystal substrates by pulsed electron beam deposition (PED) through a slight variation of argon pressure in PED. At a pressure of 2 × 10−2 mbar transparent, stoichiometric (ZnO) and crystalline films are obtained, while at 9 × 10−3 mbar black, oxygen-deficient (ZnO0.85) and amorphous films result. Stoichiometry, structural, and optoelectronic properties of transparent and black ZnO thin films were comparatively analyzed as a function of oxygen deficiency. Black ZnO thin films exhibit enhanced absorption in the visible and near-infrared due to oxygen deficiency, thus extending the range of applications of zinc oxide thin films from transparent electronics to solar absorbers and photocatalysis. [ABSTRACT FROM AUTHOR]

Thin-film materials from μ m thickness down to single-atomic-layered 2D materials play a central role in many novel electronic and optical applications. Coherent, nonlinear optical (NLO) μ -spectroscopy offers insight into the local thickness, stacking order, symmetry, or electronic and vibrational properties. Thin films and 2D materials are usually supported on multi-layered substrates leading to (multi-)reflections, interference, or phase jumps at interfaces during μ -spectroscopy, which all can make the interpretation of experiments particularly challenging. The disentanglement of the influence parameters can be achieved via rigorous theoretical analysis. In this work, we compare two self-developed modeling approaches, a semi-analytical and a fully vectorial model, to experiments carried out in thin-film geometry for two archetypal NLO processes, second-harmonic and third-harmonic generation. In particular, we demonstrate that thin-film interference and phase matching do heavily influence the signal strength. Furthermore, we work out key differences between three and four photon processes, such as the role of the Gouy-phase shift and the focal position. Last, we can show that a relatively simple semi-analytical model, despite its limitations, is able to accurately describe experiments at a significantly lower computational cost as compared to a full vectorial modeling. This study lays the groundwork for performing quantitative NLO μ -spectroscopy on thin films and 2D materials, as it identifies and quantifies the impact of the corresponding sample and setup parameters on the NLO signal, in order to distinguish them from genuine material properties. [ABSTRACT FROM AUTHOR]

Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO3 thin films (space group P n a 2 1), grown on economic and technologically important (100)Si substrates by a pulsed laser deposition technique. Structural analysis and comprehensive mapping of the Ga:Fe ratio across a length scale range of 104 reveals coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling—a decrease in remanent polarization by ∼ 21 % under ∼ 50 kOe. Magnetic force microscopy reveals the presence of both finer (< 100 nm) and coarser (∼ 2 μ m) magnetic domains. Strong multiferroicity in epitaxial GaFeO3 thin films, grown on a (100)Si substrate, brighten the prospect of their integration with Si-based electronics and could pave the way for development of economic and more efficient electromechanical, electrooptic, or magnetoelectric sensor devices. [ABSTRACT FROM AUTHOR]

Copper tungsten oxide films are deposited with the help of reactive high power impulse magnetron sputtering (HiPIMS) in an argon/oxygen gas mixture. Two magnetrons, one equipped with a tungsten target and the other with a copper target, are employed. The HiPIMS discharge is operated with a repetition frequency of f = 100 Hz. Pulse widths of 100 and 20 μ s separated by 25 μ s are chosen for the tungsten and copper target, respectively. Films deposited on two different glass substrates [soda lime glass and fluorine doped tin oxide (FTO) coated glass] are characterized by energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, Raman spectroscopy, and ellipsometry. Photoelectrochemical activity was investigated by linear voltammetry. The composition and crystal structure of as-deposited and annealed films are found to depend on the deposition conditions. Annealed films deposited on FTO glass are composed of WO3 and CuWO4 or Cu2WO4 crystal phases. Films deposited on soda lime glass are subject to sodium diffusion into the films during annealing and the formation of Na2W2O7 and Na2W4O 13 phases. [ABSTRACT FROM AUTHOR]

Barium titanate (BaTiO3) is a promising candidate for electro-optical modulators in Si photonics. The BaTiO3 ferroelectric domain morphology is strongly affected by thermal, electrical, and mechanical conditions and, in turn, profoundly influences the film's optical properties. Because BaTiO3 film growth takes place at a relatively high temperature, upon cooling, the film is subject to complex thermal effects that involve changes in the crystal phase, the emergence of ferroelectricity, and variations in the strain level. We use a phase field model to describe the evolution of the BaTiO3 thin film domain morphology upon cooling from growth to room temperature. We demonstrate that cooling under different cooling scenarios results in different domain morphologies. Our simulations provide a clear temperature–strain map and thermal strategy for controllable BaTiO3 epitaxy on the SrTiO3-buffered Si substrate. [ABSTRACT FROM AUTHOR]

A magnetocaloric effect (MCE) with sizable isothermal entropy change (ΔS) maintained over a broad range of temperatures above the blocking temperature is reported for a rare earth-free superparamagnetic nanoparticle system comprising of Fe–TiN heterostructure. Superparamagnetic iron (Fe) particles were embedded in a titanium nitride (TiN) thin film matrix in a TiN/Fe/TiN multilayered pattern using a pulsed laser deposition method. High angle annular dark-field images in conjunction with dispersive energy analysis, recorded using scanning transmission electron microscopy, show a clear presence of alternating layers of Fe and TiN with a distinct atomic number contrast between Fe particles and TiN. Quantitative information about the isothermal entropy change (ΔS) and the magnetocaloric effect in the multilayer Fe–TiN system has been obtained by applying Maxwell relation to the magnetization vs temperature data at various fields. With the absence of a dynamic magnetic hysteresis above the blocking temperature, the negative ΔS as high as 4.18 × 103 J/Km3 (normal or forward MCE) is obtained at 3 T at 300 K. [ABSTRACT FROM AUTHOR]

A novel elastomer-based composite material with enhanced piezoelectric performances is proposed in this paper, which is composed of the top and bottom polytetrafluoroethylene (PTFE) solid films with the middle PTFE nanoparticle–polydimethylsiloxane (PDMS) sponge layer. To enhance the charge retention capability of elastomers, PTFE nanoparticles are introduced to form PTFE–PDMS interfaces, which can trap charges with longevity. Besides, PTFE solid films take on the role of the charge blocking layers to further improve the piezoelectric performances. As a result, the PTFE–PDMS sandwich structure shows the advantages of remarkable sensitivity (1053 pC/N), high stability, and flexibility. After a 6 h of annealing treatment at the temperature of 100 °C, no significant deterioration of the piezoelectric properties can be observed, which reveals the great thermal stability of the sandwich structure. In addition, the sandwich structure can be immersed in water for 24 h without any loss of piezoelectric activity. Finally, the experiment of lighting one LED by hand pressing successfully demonstrates that the sandwich structure has good applicability in the field of energy harvesting. Considering the excellent electrical and mechanical features, the PTFE–PDMS sandwich structure has promising applications in sensing, energy harvesting, and actuation. [ABSTRACT FROM AUTHOR]

Pulse responses of different materials commonly used as electron sources in photoinjectors have been determined. Thin film photocathodes, such as strained GaAs/GaAsP superlattice and K2CsSb, produce fast responses. The emission intensity at time scales comparable with the acceptance of electron accelerators is found to be reasonably low, which is an advantage for operation at high beam powers. The temporal responses of these cathodes are compared with the response of bulk GaAs. [ABSTRACT FROM AUTHOR]

Uniformly acceptor doped Pb(Zr0.48Ti0.52)O3 (PZT) films with 2 mol. % Mg or Fe prepared by chemical solution deposition exhibited decreased dielectric constants and remanent polarizations relative to undoped PZT. For highly accelerated lifetime testing (HALT) at 200 °C and an electric field of 300 kV/cm in the field up direction, the HALT lifetimes (t50) for undoped, Mg-doped, and Fe-doped PZT films were shortened from 2.81 ± 0.1 to 0.21 ± 0.1 and 0.54 ± 0.04 h, respectively. Through thermally stimulated depolarization current measurement, significant V O ∙ ∙ electromigration was found in homogeneously Mg-doped PZT thin films, a major factor in their short HALT lifetime. Because the concentration of oxygen vacancies increases with uniform acceptor doping, the lifetime decreases. In contrast, when a thin layer of Mg-doped or Fe-doped PZT was deposited on undoped PZT or Nb-doped PZT (PNZT), the HALT lifetimes were longer than those of pure PZT or PNZT films. This confirms prior work on PNZT films with a Mn-doped top layer, demonstrating that the HALT lifetime increases for composite films when a layer with multivalent acceptors is present near the negative electrode during HALT. In that case, the compensating electrons are trapped, presumably on the multivalent acceptors, thus increasing the lifetime. [ABSTRACT FROM AUTHOR]

In this paper, nanostructured tungsten oxide (WO3) thin films are deposited using the RF-magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the structural, morphological, optical, and resistive switching (RS) characteristics of nanostructured WO3 film is investigated as a function of GLAD angle (60°–80°). Electrical studies on nanostructured WO3 films deposited at room temperature are found to exhibit enhanced bipolar resistive-switching properties in metal–insulator–metal pattern [Au/WO3/ITO]. The RON/ROFF ratio between high and low resistance states was noted to be about 190 besides a minimum set voltage of ∼2.22 V in the case of the WO3 thin film deposited at the 70° glancing angle. A detailed current transport mechanism analysis indicates the existence of ohmic-behavior and trap-assisted space charge limited conduction as the governing mechanisms at the state of low and high applied bias, respectively. Good data-retention characteristics coupled with reproducible and fast RS capabilities obtained with Au/WO3/ITO device structure promise scope of rapid development in future RS-based novel memory device applications. [ABSTRACT FROM AUTHOR]

Pulsed laser deposition (PLD) is a powerful technique for prototyping thin film materials, both single component (single composition) films and films with a varying composition (e.g., lateral continuous compositional spread, CCS). In this work, we improve one of the simulation methods used to design the deposition of PLD films: We extend the mathematical model for the material spread on the substrate, T 1 (x , y) , for each laser pulse hitting the target, and we use a more accurate method to determine T 1 (x , y) experimentally. The deposition of the material on the substrate is simulated by repetitively adding T 1 (x , y) , from one or more targets, at the selected location on the substrate. Using the new model, a high agreement between the simulated and grown films' thickness and composition across the substrate was obtained. The basis for the high agreement is the use of variable angle spectroscopic ellipsometry to carefully determine T 1 (x , y) by measuring at 794 locations on the 50.8 mm (2 in.) diameter substrates. Factors, such as variation in optical properties and porosity across the plume/calibration films, were considered in the determination of the thicknesses. As test cases, we simulated and deposited (single component) TiO 2 thin films and (CCS) TiO 2 films doped with Cr and N, deposited on 50.8 mm diameter Si wafers. The modeling and simulations are implemented in an open-source Python library, pyPLD. [ABSTRACT FROM AUTHOR]

The present investigation reports the swift heavy ion induced effects on cerium oxide (CeO2) thin films. These thin films were deposited on Si (111) substrates by the electron-beam evaporation method and irradiated by a 100 MeV O7+ ion beam with different ion fluences. X-ray diffraction analysis of these films confirms the stable fluorite phase of CeO2 even after the higher fluence of irradiations. Raman measurement also supports the presence of the F2g phase of CeO2 and the presence of defect states. The Gaussian deconvolution of photoluminescence (PL) spectra reveals various defect-associated peaks. The broad peaks in the PL spectra are associated with oxygen vacancies and are red-shifted (494–520 nm) with ion fluences. The surface morphological images show the modification in the surface roughness with ion irradiation and the re-growth of smaller circular-formed nanoparticles on the surface is observed at the fluence of 5 × 1011 ions/cm2. Magnetic measurements show an enhancement in magnetic ordering with ion irradiation. All the samples demonstrate room temperature ferromagnetism with magnetic saturation (Ms) up to 14.57 emu/cm3. The saturation magnetization in irradiated thin films is directly correlated to the area under the peak of defect-associated PL emission. The mechanism such as the oxygen vacancy-based F-center exchange model is considered to understand the enhancement of ferromagnetism in ion irradiated CeO2 thin films. Some popular theoretical models are also employed to determine various magnetic parameters. [ABSTRACT FROM AUTHOR]

This paper focused on developing a methodology and metrology using a differential photoacoustic (PA) system to determine the effective water vapor diffusion coefficient (D e f f ) and the effective permeability coefficient (Π) in thin films as a piece of paper and standard polystyrene for a controlled relative humidity. The methodology proposes a new differential photoacoustic system, including the water reservoir, relative humidity, and temperature detectors. Two cells, reference/sample, were used to obtain the instrumental function to reduce the electronic and environmental noises. A method based on the study of ln [ 1 − (S − S 0) / Δ S ] = t / τ D and the behaviors of R2 as a function of the number of data was proposed to assess the region in which the photoacoustic signal should be processed to determine each effective coefficient. S is the amplitude of the PA signal, S 0 is the initial amplitude value, Δ S is the change, t (time), and τ D is the water vapor diffusion time. The effective water diffusion coefficient (D e f f ) for water and polystyrene was 1.90 × 10−11 m2/s and 3.09 × 10−11 m2/s, respectively. The permeability coefficient value for the piece of paper was 4.18 × 10−9 mol kg−1 cm−2 s−1 Pa−1, while for polystyrene, it was 6.80 × 10−9 mol kg−1 cm−2 s−1 Pa−1 for 70% of relative humidity. This methodology can be extended by changing the moisture content on the chamber to obtain the dependence of D e f f as a function of relative humidity. [ABSTRACT FROM AUTHOR]

We have investigated the thickness-dependent transport properties of SrMoO 3 thin films deposited on LaAlO 3 substrates. Metal–insulator transitions (MITs) were observed in SrMoO 3 thin films with thickness below 10 nm. The low-temperature resistivity of these films can be explained by quantum corrections of the conductivity. An insulating behavior is observed when the thickness becomes 3.5 nm, and the resistivity can be described by the variable range hopping model with 2D fitting. The magneto-transport measurement of an SrMoO 3 thin film with small positive magnetoresistance confirms that the driving force behind MIT is the renormalized electron–electron interaction. [ABSTRACT FROM AUTHOR]

Lift-off processes have been developed as the enabling technology to free the epitaxial III-nitride thin film from a conventional growth substrate such as sapphire and silicon in order to realize a variety of novel device designs and structures not otherwise possible. An epitaxial lift-off (ELO) process can be adopted to transfer the entire film to an arbitrary foreign substrate to achieve various functions, including enhancement of device performance, improvement of thermal management, and to enable flexibility among others. On the other hand, partial ELO techniques, whereby only a portion of the thin-film is detached from the substrate, can be employed to realize unconventional device structures or geometries, such as apertured, pivoted, and flexible devices, which may be exploited for various photonic structures or optical cavities. This paper reviews the development of different lift-off strategies and processes for III-nitride materials and devices, followed by a perspective on the future directions of this technology. [ABSTRACT FROM AUTHOR]

Several groups present their efforts on understanding the roles of 2D buffer layer on van der Waals or remote epitaxy, or engineering the 2D/3D interface for designing epitaxy conditions. We are pleased to present a special topic issue on Novel Epitaxy of Functional Materials. Accordingly, several advanced approaches[[1], [3], [5]] have been developed, such as low-temperature buffer approach, lattice-engineered buffer approach, metamorphic buffer approach, epitaxial lateral overgrowth, domain-matched epitaxy, van der Waals epitaxy, and remote epitaxy. [Extracted from the article]

Two-dimensional van der Waals ferroelectric semiconductors have attracted extensive research interest in both theoretical investigation and device applications due to their ferroelectricity and semiconducting nature. However, it is still not well understood how the ferroelectric phase is able to coexist with the semiconducting phase in this emerging material class. In this work, mm-scale continuous films of In2Se3 with a thickness of ∼3 nm were synthesized successfully by physical vapor deposition. Furthermore, we fabricated asymmetric ferroelectric semiconductor junctions (a-FSJs) from thick exfoliated and PVD-grown ultrathin In2Se3 films. A high read current density of ∼100 A/cm2 and a distinction ratio of over 102 at VRead = 0.5 V are achieved in devices fabricated by a 3 nm-thick In2Se3 film toward ultrahigh-density memory integration. Notably, the coercive voltage is constant, with In2Se3 film thickness decreasing from 200 to 3 nm. A qualitative model is proposed to elucidate the anomalous film-thickness-independent coercive voltage in this ultrathin a-FSJ, which can also be generalized to other emerging two-dimensional ferroelectric semiconductors. [ABSTRACT FROM AUTHOR]

We introduce an equivalent-circuit element based on the theory of interface pinning in random systems to analyze the contribution of domain wall motion below the coercive field to the impedance of a ferroelectric, as a function of amplitude E 0 and frequency f of an applied ac electric field. We demonstrate our model on a bulk PbZr x Ti 1 − x O 3 (PZT) reference sample and then investigate capacitor stacks, containing ferroelectric 0.5 (Ba 0.7 Ca 0.3) TiO 3 – 0.5 Ba (Zr 0.2 Ti 0.8) O 3 (BCZT) thin films, epitaxially grown by pulsed laser deposition on Nb-doped SrTiO 3 single crystal substrates and covered with Au electrodes. Impedance spectra from f = 10 Hz to 1 MHz were collected at different E 0. Deconvolution of the spectra is achieved by fitting the measured impedance with an equivalent-circuit model of the capacitor stacks, and we extract for E 0 = 2.5 kV/cm, a frequency-dependent permittivity of ε r ′ (f) = 458 + 7.3 ln ⁡ (1 Hz / 2 π f) for the BCZT films from the obtained fit parameters. From an extended Rayleigh analysis, we obtain a coupling strength of 0.187 cm/kV between dielectric nonlinearity and dielectric dispersion in the BCZT films and identify different domain-wall-motion regimes. Finally, we construct a schematic diagram of the different domain-wall-motion regimes and discuss the corresponding domain-wall dynamics. Our approach can be utilized to replace purely phenomenological constant phase elements (CPEs) in modeling the impedance response of ferroelectrics and extracting material properties. [ABSTRACT FROM AUTHOR]

Barium titanate is a brittle, lead free ferroelectric and piezoelectric ceramic used in patterned and thin film forms in micro- and nano-scale electronic devices. Both during deposition and eventually during service, this material system develops stresses due to different loads acting on the system, which can lead to its failure due to cracking in the films and/or interface delamination. In situ microcantilever bending based fracture experiments and tensile tests based on shear lag tests in combination with digital image correlation were used to understand the cracking behavior of barium titanate films when deposited on flexible substrates. For the first time, the fracture behavior of these nanocrystalline barium titanate films has been quantified in terms of fracture toughness, fracture strength, and interface shear stresses for different film thicknesses. Critical defect size is estimated using the above information as a function of film thickness. It is found that damage tolerance in terms of fracture strength depends on film thickness. Furthermore, compared to a bulk single crystal, barium titanate fracture resistance of the nanocrystalline thin films is reduced. Both effects need to be considered in engineering design of reliable devices employing micro- and nano-scale barium titanate thin film structures. [ABSTRACT FROM AUTHOR]

Nanothermite NiO–Al is a promising material system for low gas emission heat sources; yet, its reactive properties are highly dependent on material processing conditions. In the current study, sputter deposition is used to fabricate highly controlled nanolaminates comprised of alternating NiO and Al layers. Films having an overall stoichiometry of 2Al to 3NiO were produced with different bilayer thicknesses to investigate how ignition and self-sustained, high temperature reactions vary with changes to nanometer-scale periodicity and preheat conditions. Ignition studies were carried out with both hot plate and laser irradiation and compared to slow heating studies in hot-stage x-ray diffraction. Ignition behavior has bilayer thickness and heating rate dependencies. The 2Al/3NiO with λ ≤ 300 nm ignited via solid/solid diffusion mixing (activation energy, Ea = 49 ± 3 kJ/mole). Multilayers having λ≥ 500 nm required a more favorable mixing kinetics of solid/liquid dissolution into molten Al (Ea = 30 ± 4 kJ/mole). This solid/liquid dissolution Ea is a factor of 5 lower than that of the previously reported powder compacts due to the elimination of a passivating Al oxide layer present on the powder. The reactant mixing mechanism between 300 and 500 nm bilayer thicknesses was dependent on the ignition source's heating rate. The self-propagating reaction velocities of 2Al/3NiO multilayers varied from 0.4 to 2.5 m/s. Pre-heating nanolaminates to temperatures below the onset reaction temperatures associated with forming intermediate nickel aluminides at multilayer interfaces led to increased propagation velocities, whereas pre-heating samples above the onset temperatures inhibited subsequent attempts at laser ignition. [ABSTRACT FROM AUTHOR]