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The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances.

Authors :
Han, Runhao
Hong, Peizhen
Ning, Shuai
Xu, Qiang
Bai, Mingkai
Zhou, Jing
Li, Kaiyi
Liu, Fei
Shi, Feng
Luo, Feng
Huo, Zongliang
Source :
Journal of Applied Physics. 6/28/2023, Vol. 133 Issue 24, p1-24. 24p.
Publication Year :
2023

Abstract

HfO 2 -based thin films have raised considerable interest in ferroelectric memory devices due to their thickness scalability and process compatibility with CMOS. Stress exhibits a significant influence on ferroelectric polarization in HfO 2 -based films. However, the effect of stress has yet to be clarified despite numerous efforts, and there has been a lack of systematic review to collate and discuss this effect. This paper briefly introduces how stress is characterized in HfO 2 -based polycrystalline films as basis. Then, the process in which stress affects ferroelectricity is carefully discussed. The paper subsequently elaborates both the effects of out of plane stress and in plane stress. Furthermore, the interaction between stress and other factors is presented. Finally, the up-to-date research on the effect of stress are summarized, and several further research challenges for researchers are provided. Given the ubiquitous stress during the chip manufacturing process, a detailed summary of the stress effect has technological implications for processing and applications of HfO 2 -based thin films. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
133
Issue :
24
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
164666000
Full Text :
https://doi.org/10.1063/5.0146998