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The non-destructive identification of surface cracks in steel parts has always been an issue of great industrial interest. Among the non-destructive crack inspection approaches proposed in the past is field measurement resulting from impressed current crack perturbation. Obviously, crack detection becomes more challenging as the active sensor dimensions and/or surface clearance become large in comparison to the crack itself. In this paper, the wavelets approach is utilized in crack volume and location detection using impressed current differential measurements involving relatively large sensing elements. Detailed methodology and results demonstrating the advantages of the proposed approach are given in the paper.

This paper proposes an integrated micro-chip for the manipulation and detection of magnetic particles (MPs). A conducting ring structure is used to manipulate MPs toward giant magnetoresistance (GMR) sensing elements for rapid detection. The GMR sensor is fabricated in a horseshoe shape in order to detect the majority of MPs that are trapped around the conducting structure. The GMR sensing elements are connected in a Wheatstone bridge circuit topology for optimum noise suppression. Full fabrication details of the micro-chip, characterization of the GMR sensors, and experimental results with MPs are presented in this paper. Experimental results showed that the micro-chip can detect MPs from low concentration samples after they were guided toward the GMR sensors by applying current to the conducting ring structure.

The non-scanning, junction-based photocurrent method is one of many techniques that have been devised to determine the minority carrier diffusion length in semiconductor materials. The accuracy of this method is the subject of this paper and the investigation focuses on the theoretical equation that relates the diffusion length to the measured photocurrent produced by a Schottky barrier diode. Specifically, the investigation concentrates on a commonly used assumption in the derivation of this equation, which is that carriers arriving at the edge of the depletion region are swept away from the depletion edge toward the surface barrier at a velocity that is much greater than the diffusion velocity. The subsequent analysis and the results presented in this paper are based on experiments using p-type GaN. The results obtained from numerical simulations show that both velocities have comparable magnitude and the assumption in question is technically incorrect, especially when the diffusion length is very short...

In this paper we describe a new method for producing samples with large thin areas for Lorentz TEM observation of recorded magnetic domain patterns in production‐quality thin‐film rigid disks. In this method, as applied in this paper to the study of electroplated Co‐Ni‐P media, a strippable metal layer is introduced beneath the magnetic layer, along with plated Ni‐P which provides a sublayer for magnetic film growth comparable to the normal polished electroless nickel substrate. In this way one can produce a magnetic layer identical to that on a real disk, write data on the disk with a flying head, and then remove the magnetic layer for TEM analysis. We also describe some typical applications of the new method, including a comparison of magnetic domain structure at recorded transitions in high‐ and low‐noise media, and an illustration of the effect of head pole geometry on bit‐cell shape.

In this paper we study the bandgap properties of two-dimensional phononic crystals with cross-like holes using the finite element method. The influence of the geometry parameters of the holes on the bandgaps is discussed. In contrast to a system of square holes, which does not exhibits bandgaps if the symmetry of the holes is the same as that of the lattice, systems of cross-like holes show large bandgaps at lower frequencies. The bandgaps are significantly dependent upon the geometry (including the size, shape, and rotation) of the cross-like holes. The vibration modes of the bandgap edges are computed and analyzed in order to clarify the mechanism of the generation of the lowest bandgap. It is found that the generation of the lowest bangdap is a result of the local resonance of the periodically arranged lumps connected with narrow connectors. Spring-mass models are developed in order to predict the frequencies of the lower bandgap edges. The study in this paper is relevant to the optimal design of the bandgaps in light porous materials.

Quantum dot–plasmon waveguide systems are of interest for the active control of plasmon propagation, and consequently, the development of active nanophotonic devices such as nano-sized optical transistors. This paper is concerned with how varying aspect ratio of the waveguide cross-section affects the quantum dot–plasmon coupling. We compare a stripe waveguide with an equivalent nanowire, illustrating that both waveguides have a similar coupling strength to a nearby quantum dot for small waveguide cross-section, thereby indicating that stripe lithographic waveguides have strong potential use in quantum dot–plasmon waveguide systems. We also demonstrate that changing the aspect ratio of both stripe and wire waveguides can increase the spontaneous emission rate of the quantum dot into the plasmon mode, by up to a factor of five. The results of this paper will contribute to the optimisation of quantum dot–plasmon waveguide systems and help pave the way for the development of active nanophotonics devices.

There is need for non-reciprocal devices such as circulators and isolators. Although such devices are common at frequencies below 10 GHz, there is a lack of compact, low-weight, devices at higher microwave frequencies. This paper examines the non-reciprocal behavior associated with attenuated total reflection (ATR) for multi-layered dielectric and magnetic structures. Non-reciprocal behaviors produced by ATR have been explored for semi-infinite magnetic materials. This paper focuses on ATR behavior with magnetic films of finite thickness, from thick layers of around 3 cm to thin layers of about 1 µm. The results show significant non-reciprocity even for magnetic layers less than 0.1 cm thick, with reflection loss differences of more than 30 dB between positive and negative signal propagation. Results are presented for yttrium iron garnet and M type barium hexagonal ferrites. The two materials allow nonreciprocal behavior at different frequencies, 5–20 GHz for the garnet and 45–80 GHz for the hexagonal fer...

The science and technology of ferroelectric thin films and their applications have attracted many researchers and experienced tremendous progress in the past 20 years. The recent worldwide increase in commercial applications of ferroelectric devices such as smart cards based on nonvolatile ferroelectric random access memories is a symbol of both the maturity and the acceptance of the technology. The 21st International Symposium on Integrated Ferroelectrics (ISIF 2009), held on September 22 to October 2, 2009 in Colorado Springs, CO, provided a forum for the academic and national laboratories research community and industry to present and share their new findings, achievements, and opinions on integrated ferroelectrics and their applications. The International Symposium on Integrated Ferroelectrics hosted the ISIF 2009. This was the first year where the ISIF held the conference in its new format under the name of International Symposium on Integrated Functionalities. The General Chairs of the ISIF in consultation with the Advisory Board and the ISIF community decided to revise the focus of the conference in order to broaden the scope to the science and technology of multifunctional materials and devices. This decision was taken in view that a new paradigm in materials, materials integration, and devices is emergingmore » with a view to the development of a new generation of micro- and nanoscale multifunctional devices. The program included three plenary presentations on diverse topics such as 'The Role of Nonvolatile Memory in Ubiquitous Computing,' 'Ferroelectrics and High Density Memory Technology,' 'Nanoscale Ferroelectrics and Interfaces: Size Effects,' four tutorial lectures on diverse topics, such as 'Magnetic Memory Applications,' 'Ferroelectrics and Ferroelectric Devices,' 'Challenges for High-K Dielectrics on High Mobility Channels,' 'Solar Cell Materials,' one poster session, and eight oral sessions. Thanks to the great efforts made by the ISIF organization committee and the session chairs, the conference successfully achieved its objectives and the work presented reflected very well the most recent advances of integrated ferroelectrics and their applications, as well as advances in other areas related to the new theme of Integrated Functionalities. Many aspects of ferroelectric, piezoelectric, high-K dielectric, magnetic, and phase change materials, including the science and technology of these materials in thin film form, integration with other thin film materials (metals or oxide electrodes), and fabrication of micro- and nanostructures based on these heterostructure layers, and device architecture and physics, were addressed from the experimental point of view. Work on theory and computer simulations of the mentioned materials and devices were discussed also with a view to the promising applications to multifunctional devices. In addition, the ISIF 2009 featured discussions of alternative nonvolatile memory concepts and materials, such as phase change memories, research on multiferroics and magnetoelectric materials, ferroelectric photovoltaics, and new directions on the science of perovskites such as biomolecular/polarizable interfaces, and bio-ferroelectric and other oxide interfaces. Following the standard submission and peer review process of Journal of Applied Physics, the selected papers presented in ISIF 2009 in Colorado Springs are published in this special issue. We believe that the papers in this special issue represent the forefront contributions to ISIF 2009 in the various areas of fundamental and applied science of integrated ferroelectrics and functionalities and their applications. We would like to take this opportunity to thank the following organizations and companies for their support and sponsorship for ISIF 2009, namely: Aixact Systems GMBH, Radiant Technologies, Symetrix Corporation, and Taylor and Francis Publishers. We would also like to thank the conference and session chairs, advisory and organizing committee members for their hard work that resulted in a very successful ISIF 2009, now in its new future-looking modality of Integrated Functionalities.« less

In this paper, an analytical model for the estimation of threshold voltage shift, mobility, drain current and subthreshold leakage current in virgin as well as irradiated nanoscale fin-shaped field effect transistor (FinFET) device has been presented. The generation of traps in the buried oxide (BOX) and the interface traps at the sidewall influence the characteristics of an irradiated FinFET device. A mobility model considering the influence of quantum mechanical structural confinement and the contribution of interface traps due to all the interfaces is reported in this paper. The modified definition of effective field is adopted to account for nonzero electric field at the back oxide interface of SOI (Silicon-on-Insulator) FinFET device. The results obtained on the basis of our models were compared and contrasted with reported experimental results. A close match was found that validate our analytical modeling approach.

This paper analyzes parameters required for realizing remote detection of a concealed source of ionizing radiation by observing the occurrence of breakdown in air by a focused wave beam. Production of free electrons and the free electron density in the absence/presence of additional sources of ionization are analyzed. The maximum electron density in the discharge and the time required for this density to return after the discharge back to its stationary level, are estimated. The optimal excess of the power density and the corresponding power level as the function of frequency are determined. It is shown that the optimal frequency of such systems ranges from 0.3 up to 0.8 THz. The paper also determines the range of such systems as the function of the source frequency and power and contains a brief analysis of available sources of microwave, millimeter-wave and THz radiation.

This paper reports a detailed experimental analysis on the effect of forbidden bandgaps of planar metallo-dielectric electromagnetic bandgap (EBG) structures as ground plane of a half wavelength linear resonator. It is observed that the resonator with metallic square and triangular lattice as ground plane results in resonance shifting to higher values whereas, on patterning negative structures of the said lattice which we mention as dielectric lattice in this paper, did not result in any appreciable change. Simulation and experimental results illustrate appreciable increase in quality factor and decrease in insertion loss for metallic EBG on the ground plane, while marginal reduction in insertion losses and increase in quality factor has been obtained with dielectric lattice.

This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies ∼ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC roll-off, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode–based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 × 10−3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

The aim of the paper is to describe the modes coupling due to scattering on small one-dimensional irregularities (parallel ridges) of the surface of isotropic solid plates, when shear horizontal waves (SH-waves) polarized along the ridges propagate perpendicularly to them. In a previous paper [Valier-Brasier et al., Appl. Phys. Lett. 93, 164101 (2008)], an analytical model was presented for describing the roughness by inertia of “teeth” which bound the ridges, through an impedancelike boundary condition, whatever shape of the roughness is. In the present paper, this shape is accounted for through a more sophisticated model, used previously for describing the effects of the roughness of walls on acoustic pressure fields in fluid-filled waveguides [Valier-Brasier et al., J. Appl. Phys. 106, 034913 (2009)], and adapted here in order to describe the modes coupling due to the scattering of these SH-waves. Moreover, the effect of a spatial periodicity of the ridges on the modes coupling is discussed, emphasizin...

Transformation optical devices based on the concept of complementary medium have attracted much attention due to their novel properties. A recent paper [H. Chen and C. T. Chan, Opt. Lett. 34, 2649 (2009)] showed a class of complementary medium in bipolar coordinates, which can render the object invisible at a distance. The prescription requires lossless materials composed of negative index medium (NIM), and a certain loss will cut off the cloaking effect of the device. In this paper, we suggest compensation to the lossy NIM by introducing gain media into such a device. For the realization of the whole cloaking device, we present an optimized compensation method to upgrade the function by adding a very thin layer of gain media in the surrounding medium. Numerical simulations demonstrate a dramatic improvement in the cloaking performance when the NIM is lossy.

Evanescent modes in complete sonic crystals (SCs) and SC with point defects are reported both theoretically and experimentally in this paper. Plane wave expansion (PWE) and in general, ω(k)ω(k) methods have been used to calculate band structures showing gaps that have been interpreted as ranges of frequencies where no real kk exists. In this work, we extend PWE to solve the complex k(ω)k(ω) problem applied to SC, introducing the supercell approximation for studying one vacancy. Explicit matrix formulation of the equations is given. This k(ω)k(ω) method enables the calculation of complex band structures, as well as enabling an analysis of the propagating modes related with real values of the function k(ω)k(ω), and the evanescent modes related with imaginary values of k(ω)k(ω). This paper shows theoretical results and experimental evidences of the evanescent behavior of modes inside the SC band gap. Experimental data and numerical results using the finite elements method are in very good agreement with the predictions obtained using the k(ω)k(ω) method., The authors would like to thank Dr. E. A. Sanchez-Perez for his comments and suggestions and thank Daniel Fenollosa and Talleres Ferriols for their help in building the mechanical part of 3DReAMS. This work was supported by MEC (Spanish government) and the European Regional Development Fund, under Grant Nos. MAT2009-09438 and MTM2009-14483-C02-02.

The recent trend in miniaturization of piezoelectrically active devices is driving research on size effects of these functional materials under reduced length scales. In this paper, we measure and model the generation of charge in thin piezoelectric structures under sinusoidal hydrostatic pressure and show how the subsequent thermally induced pyroelectric effect dominates the response in the smallest samples. We calculate the temperature profiles through the lead zirconate titanate structures, and determine the pyroelectric coefficient in these materials to be p′=0.28±0.02 mC m−2 K−1. The analysis of the piezoelectric and pyroelectric charge response described in this paper has significant impact on the design and fundamental functional behavior of small-scale piezoelectric devices.

Stoney’s equation allows one to calculate the internal stress in a thin film deposited on a thick substrate from the curvature of the bilayer beam. The curvature measurement is thus critical in the bending beam method, which is based on this equation. When an optical technique is used in curvature measurement, the refraction at optical boundaries needs to be corrected. An approximate correction to Stoney’s equation accounting for refractive error in the bending beam method in electrochemical applications was reported previously. This paper revisits the derivation. A set of diagrams for optical paths in in situ curvature measurement using the laser beam deflection method are presented. These diagrams allow us to establish the triangular relationships among the incident angles of the light beam and the deflection angle of the cantilever beam. Correction solutions are derived for three possible optical arrangements with the consideration of the travel distance of the light beam in liquid and in the container wall. In its approximated form, the correction derived in this paper differs from the previous formula by a factor of 2. It was discovered that an incorrect relationship for curvature was used in the previous derivation.

The characteristics of different GaN transistor devices characterized at elevated temperatures for power applications are compared in this paper. High temperature characteristics of GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) and GaN high electron mobility transistors (HEMTs) are reported. For MOSFETs, the transconductance current (gm) increases with temperature, while for HEMTs is reduced. Their specific on resistance (Ron) follows the same trend. Specific contact resistivity (ρc) to implanted Si N+ GaN also diminishes with T, whereas for AlGaN/GaN ρc remains practically constant. We bring a more physical insight into the temperature behavior of these GaN devices by means of physics-based modeling in Sec. VI of this paper. The MOSFET’s field-effect mobility increases with T due to interface trap Coulomb scattering. Analogously, the HEMT’s gm decrease with T is attributed to a significant reduction in the two-dimensional electron gas carrier mobility due to polar-optical-phonon scatte...

This paper is devoted to the phenomenon of resonant transmission in three-dimensional electromagnetic band gap structures (EBGs), achieved by introducing a defect into an EBG structure with the corresponding resonance frequency of the defect lying within the initial EBG region. It is shown that the resonance frequency of an EBG air cavity (acceptor defect) can either increase or decrease with increasing cavity dimensions. In particular, this paper demonstrates both experimentally and theoretically that the resonance frequency of a woodpile air cavity, formed by the partial removal of a woodpile bar, increases with increasing cavity size; it increases continuously or saturates depending on the field polarization with respect to the cavity orientation. The results obtained in this paper can be used for designing EBG devices based on resonant transmission.

The enhancement of the efficiency in free-electron lasers (FELs) through the use of a tapered wiggler is well known. The physics of the tapered wiggler interaction has been studied in theory and simulation, and large efficiency enhancements have been observed in the laboratory in oscillators and seeded amplifiers. In this paper, we study the differences in the tapered wiggler interaction between seeded amplifiers and in FELs that start up from noise and grow to saturation in a single pass through the wiggler. This configuration is commonly referred to as self-amplified spontaneous emission (SASE). In comparison with seeded amplifiers, SASE FELs exhibit shot-to-shot fluctuations due to random phase noise in the electron bunches, and our purpose in this paper is to determine the effect of this phase noise on the tapered wiggler interaction. To this end, we study the interaction numerically using the MEDUSA simulation code for seeded and SASE FELs operating in the infrared regime. The results of the simulati...

In this paper, we have made a systematic study of the electronic and optical properties of InGaN based quantum dot light emitters. The valence force field model and 6×6k⋅p method have been applied to study the band structures in InGaN or InN quantum dot devices. Piezoelectric and spontaneous polarization effects are included. A comparison with InGaN quantum wells shows that InGaN quantum dots can provide better electron-hole overlap and reduce radiative lifetime. We also find that variation in dot sizes can lead to emission spectrum that can cover the whole visible light range. For high carrier density injection conditions, a self-consistent method for solving quantum dot devices is applied for better estimation of device performance. Consequences of variations in dot sizes, shapes, and composition have been studied in this paper. The results suggest that InGaN quantum dots would have superior performance in white light emitters.

Most of the photonic valley-Hall edge states were constructed by changing structures to break the spatial inversion symmetry, restricting the practical application potential. In this paper, we construct a tunable topological valley-Hall edge state based on the large optical Kerr effect. It is demonstrated that topological phase transition happens by engineering the intensity of the injected pump and that a valley-Hall edge state can be generated at the interface between two regions with different topological properties. In addition, eigenfrequency and transmission characteristics of the edge state as a function of applied pump intensity are investigated. The topological protected valley-dependent transmission is studied under non-uniform distributed pump intensity. This work may open a new path toward designing reconfigurable all-optical metadevices.

Cadmium zinc telluride (CZT) is an ideal material for room temperature nuclear radiation detection, but CZT crystals of high quality and low defects concentration are difficult to obtain. Therefore, in order to improve the performance of the CZT detector, the working conditions of the CZT detector could be appropriately changed to make the internal electric field of the CZT detector close to uniform distribution so as to improve the electron transport performance. In this paper, alpha induced transient charge analysis has been used to study the internal electric field of the CZT detector, and deep level defects in CZT were linked with internal electric field distribution. Based on the process, a variety of deep level defects on electron trapping and detrapping by changing the temperature, the output waveform change of charge sensitive preamplifier (the pulse height spectra for alpha radiation at different temperatures) was observed, and then the effects of deep level defects on electron mobility ( μe), electron transport time ( TR), the internal electric field, and the electron collection efficiency of the CZT detector were analyzed. The experimental results indicated that the influence of deep level defects was a main factor to the internal electric field in the range of −140 to 40 °C. As the temperature rises, the influence of these defects weakens, μe and electron collection efficiency both increase, and internal electric field distribution tends to be uniform. Moreover, with the further increasing temperature (−40 to 20 °C), μe decreased and internal electric field distribution became fluctuating, but electron collection efficiency was basically unchanged, which suggested that the influence of lattice vibration in the range of −40 to 20 °C turned to be the main factor. The above conclusions demonstrated that although the CZT detector has excellent room temperature detection ability, room temperature was not its optimal working temperature due to the influence of high concentration deep level defects. At −20 °C, the CZT detector presented the highest electron collection efficiency and maximum which limited the influence of deep level defects on electron transport, performing the optimal properties.

Electric and magnetic modes establish the basis of the localized spoof surface plasmons (LSSPs), both of which are transverse electric (TE) modes. In this paper, the concept of transverse magnetic (TM) modes of LSSPs is proposed, and the double-layer planar-circular-grating resonator is demonstrated to support the TM modes in addition to the TE modes. In numerical simulations, the TE and TM modes were excited by a plane wave and an aperture, respectively, and their resonant frequencies and electromagnetic field distributions were demonstrated to be different. The electric field of the TE mode is parallel to the grating, while the magnetic field of the TM mode is parallel to the grating. In experiments, multiple TE and TM LSSPs modes were excited by a magnetic coupler. The magnetic coupler can be rotated to distinguish the TM modes from the TE ones, which provides conclusive evidence of the existence of the TM modes. Compared with the TE LSSPs modes, the TM LSSPs modes have the advantages of high sensitivity to the distance between layers and high quality factors (Q-factors), which hold promise for providing improvements on compact applications of LSSPs. Based on the proposed concept, therefore, the classification standard of the LSSPs is expanded to make it more scientific and comprehensive.

This paper presents systematic modeling and performance analyses of a 340-GHz dual-polarized antenna-coupled single-sideband (SSB) high-Tc superconducting (HTS) mixer for terahertz (THz) communication systems. The mixer features a fully monolithic-integrated circuit layout, which enables both sensitive heterodyne detection and high image rejection by appropriate polarization-manipulating operation. To predict the comprehensive performance of such a HTS mixer with relatively complicated network architecture and polarization relationships, an innovative modified three-port modeling approach is presented and developed by theoretical derivations. Using the measured Josephson junction parameters of our previous experimentally demonstrated HTS mixer module at the same band, the best conversion gain and SSB noise temperature of the presented mixer are predicted to be around −5 dB and 1200 K at the operating temperature of 40 K, respectively. In addition, the mixer exhibits a flat frequency response over a wide intermediate-frequency range from 15 to 25 GHz and high image rejection of more than 17 dB over the radio frequency operation range. The SSB HTS Josephson mixer will be useful for THz wireless communication applications.

Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature technology for thin-film photovoltaics, however, its potential for Semi-Transparent Photovoltaics (STPV) is yet to be explored. In this paper, we present its carrier transport physics explaining the trend seen in recently published experiments. STPV requires deposition of films of only a few hundred nanometers to make them transparent and manifests several unique properties compared to a conventional thin-film solar cell. Our analysis shows that the short-circuit current, Jsc is dominated by carriers generated in the depletion region, making it nearly independent of bulk and back-surface recombination. The bulk recombination, which limits the open-circuit voltage Voc, appears to be higher than usual attributable to numerous grain boundaries. When the absorber layer is reduced below 500 nm, grain size reduces resulting in more grain boundaries and higher resistance. This produces an inverse relationship between series resistance and absorber thickness. We also present a thickness-dependent model of shunt resistance showing its impact in these ultra-thin devices. For various scenarios of bulk and interface recombinations, shunt and series resistances, AVT and composition of CuIn$_{1-x}$Ga$_x$Se$_2$, we project the efficiency limit which - for most practical cases - is found to be $\leq$10% for AVT $\geq$25%.

Structure-engineered silicon exhibits a wealth of unique optical properties below its bandgap, which holds promise for mid-infrared and terahertz applications such as photodetection, thermophotovoltaics, radiative cooling, and spectroscopy. In this paper, we investigate enhancement mechanisms of sub-bandgap absorption of black silicon fabricated into periodic pyramids. Our measurements indicate that the pyramid structure leads to an enhanced broadband absorption in the wavelength region from 1.5 to 13.07 μm with an efficiency of over 80%. The broadband absorption enhancement is shown to originate from the Rayleigh–Wood anomaly, localized magnetic plasmonic resonance, and graded-index effect, which together facilitate the interaction between light and free-carriers in silicon. These results are helpful for understanding the interaction between light and black silicon.

GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

Naturally occurring materials with hyperbolic optical properties are attracting considerable interest due to their ability to confine light in small volumes and their resulting potential for applications in photonics. This paper uses a first-principles theoretical approach without adjustable parameters to investigate the hyperbolic optical properties of bulk calcite (CaCO3). This material exhibits natural hyperbolic behavior within its Reststrahlen bands at 1403–1552 and 864–887 cm−1. The calculated results are shown to be in good agreement with our reflectance data obtained from frequency- and polarization-dependent measurements. These results show that calcite is an attractive natural hyperbolic material; in addition, it has the advantage of low losses and is available commercially in a variety of crystal orientations.

Two-dimensional black phosphorene (BP) has attracted much interest for application in electronic devices. Contacts between BP and metal electrodes are critical components of BP-based devices and can dramatically affect device performances. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, and potential distribution for interface systems of Al-, Au-, Cu-, Ni-, and Ti-monolayer BP in surface contact and edge contact (EC) types. Moreover, we also used density functional theoretical coupled with the nonequilibrium Green’s function method to investigate contact resistances and Schottky barrier heights (SBHs) for transport systems of monolayer BP with Al, Au, Cu, Ni, and Ti electrodes. Our calculated results indicate that the contact type between BP and metals may greatly affect electrical properties of BP–metal contacts. Changing contact type between metal electrodes and BP channel can change the type of Schottky barrier of metal–BP contacts. The contact barrier of metal–BP depends on the metal material. Selecting an appropriate contact type and metal can effectively regulate the contact barrier of metal–BP. Specifically exciting, our estimated lateral SBHs for the Ni–BP system in EC-type agree well with the experimental results. We have provided a new strategy on choosing an appropriate contact type to achieve low contact resistance for the metal–BP interface.

In SiN/AlGaN/GaN heterostructures, the evaluation of interface charges at the SiN/AlGaN and AlGaN/GaN interfaces is crucial since they both rule the formation of the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. In this paper, we conducted a thorough analysis of the gate-to-channel capacitance CGC(VG) and of the drain current ID(VG) over a gate voltage VG range enabling the depletion of the 2DEG and the formation of the electron channel at the SiN/AlGaN interface. This work includes the establishment of analytical equations for VTH1 (formation of the 2DEG) and VTH2 (formation of the electron channel at the SiN/AlGaN interface) as a function of interface charges and of the p-doping below the 2DEG. The inclusion of the p-doped layer below the 2DEG and the use we made of VTH2 have not been reported in previous studies. Our analysis allows a reliable estimate of the interface charges at the AlxGa1−xN/GaN and SiN/AlxGa1−xN interfaces for various Al concentrations x as well as to demonstrate that the polarization charge at the SiN/AlxGa1−xN interface is compensated, which confirms previous findings. Moreover, this compensation is found to be induced by the AlGaN layer rather than the SiN layer.

Tunable photonic crystals that are based on acousto-optic effects were proposed in this paper. Theoretical analysis and numerical simulations were carried out for the tunable photonic crystals. According to the acousto-optic effect, acoustic waves propagating in elastic media induce periodic dielectric structures in the media, and thus the media can be used as photonic crystals. Such photonic crystals possess a prominent characteristic that the photonic band gaps can be changed real-timely by adjusting the acoustic intensity and frequency. The work done in this paper opens up a possibility to achieve tunable photonic crystals on the basis of acousto-optic effects.

This paper deals with the design and analysis of thrust active magnetic bearing (AMB). Using the analytical solutions for thrust, resistance, and inductance obtained from equivalent magnetic circuits method, we determine initial design parameters such as the size of magnetic circuit, coil diameter, and the number of turns by investigating the variation of thrust according to design parameters. Then, using nonlinear finite element analysis, a detailed design considering saturation is performed in order to meet required thrust under restricted conditions. Finally, by confirming that the design result is shown in good agreement with experimental results, the validity of design procedures for thrust AMB used in this paper is proved. In particular, the dynamic test results of the thrust AMB are also given to confirm the validity of the design.

This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.

A dispersion relation for the combined effect of scattering and absorption of electromagnetic waves is presented for a large class of linear and passive material models. By invoking the optical theorem, the result states that the extinction cross section integrated over all frequencies is equal to the static limit of the extinction volume. The present paper focuses on an attempt to experimentally verify this sum rule by measuring the monostatic radar cross section of a fabricated sample of metamaterial. In particular, the paper utilizes the idea that, for a specific class of targets, the scattered fields in the forward and backward directions are identical. It is concluded that the theoretical findings are in good agreement with measurements performed in the frequency range [3.2,19.5] GHz.

The aim of this paper is to present a nonintrusive and optical method based on the classical thermal radiation laws for the measurement of microscale surface temperature. To overcome the diffraction limit, measurements are performed in the ultraviolet-visible range. According to the Planck’s law, emitting energy is low at these wavelengths and only a photonic flux can be measured through a cooled photomultiplier tube and a photon-counting card. The photonic flux exhibits a random character that can be described through well-known statistic laws such as Poisson or normal distributions. It is shown in this paper that the measured signal (photonic flux) agrees well with these statistics laws and that the surface temperature can be obtained either from the average or/and the standard deviation of the photonic flux. A multispectral technique is also introduced to get rid of the knowledge of the local surface emissivity, which is of particular interest for the measurement of temperature in microscale applications. Finally, temperature measurements carried out on a specific high temperature blackbody developed in our laboratory are compared with those obtained through an infrared camera and allow us to validate our facility and the proposed measurement technique.

Organic light emitting devices (OLEDs) have been the subject of intense research because of their potential for flat panel display and solid state lighting applications. While small molecule OLEDs with very high efficiencies have been demonstrated, solution processable devices are more desirable for large size flat panel display and solid state applications because they are compatible with low cost, large area roll-to-roll manufacturing process. In this review paper, we will present the recent progress made in solution processable OLEDs. The paper will be divided into three parts. In the first part of the paper, we will focus on the recent development of fluorescent polymer OLEDs based on conjugated polyfluorene copolymers. Specifically, we will present results of carrier transport and injection measurements, and discuss how the charge transport and injection properties affect the device performance. In the second part of the paper, we will focus on the recent progress on phosphorescent dye-dispersed nonconjugated polymer OLEDs. Specifically, we will present our recent results on high efficiency green and blue emitting devices based on the dye-dispersed polymer approach. Similar to fluorescent conjugated polymer OLEDs, charge transport and injection properties in dye-dispersed polymer OLEDs also play an important role in the device performance. In the third part of this paper, we will present our results on white emitting phosphorescent OLEDs. Two approaches have been used to demonstrate white emitting OLEDs. First, white emitting OLEDs were made using blue emitting OLEDs with downconversion phosphors. Second, white emitting OLEDs were made by dispersing red, green, and blue phosphorescent dyes into the light emitting layer. High efficiency devices have been demonstrated with both approaches

Electron beams are commonly used to inspect wafers for defective contact plugs during the manufacturing of semiconductor integrated circuits. The plugs form a part of the overall electrical connection to the transistors. These plugs can fail to make adequate electrical contact to the underlying circuitry. They may also be connected to faulty circuits. As a result, the voltage from such defective plugs evolves differently upon irradiation by an electron beam. The paths of the secondary electrons emitted from a defective plug respond to this voltage, thereby modifying the fraction of the emitted current that reaches a detector as compared to the fraction obtained from a healthy contact plug. This paper analyzes the fundamental kinetics that ultimately produces this contrast in a scanning electron microscope designed for wafer inspection. In particular, the paper investigates the kinetics of secondary electron emission from an isolated, biased plug embedded in a charge-neutral dielectric. It presents analytic models for the dependence of the electron collection efficiency with the plug voltage and an applied vertical field at the wafer. The analytic results are compared with those from numerical simulations to test the assumptions that enter the models. The mathematical derivations may ultimately be used to estimate the signal that can be extracted from plugs at dissimilar potentials.

This paper demonstrates that semiconducting carbon nanotubes can be used to implement a room temperature capacitance tunable via an external bias, i.e., a varactor, which is a key element in any communication system working up to a few terahertz. The paper describes the implementation of two types of varactors based, respectively, on a single gated nanotube and on a biased array of carbon nanotubes. In the former case, the varactor is the density-of-states dependent quantum capacitance that can be tuned via a gate voltage due to the shift of the Fermi level. In the latter case, the varactor consists of a selectively biased brushlike carbon nanotube array with a capacitance tuned via attractive and repulsive electrostatic forces between different nanotubes of the array.

Field effect transistors require an Ohmic source contact and an Ohmic drain contact for ideal operation. In many real situations, however, and specifically in organic devices, the injection of charge carriers from metals into semiconductors can be an inefficient process that is non-Ohmic. This has an adverse impact on the performance of thin film transistors and makes the analysis of electrical measurements a complex task because contact effects need to be disentangled from transistor properties. This paper deals with the effects of non-Ohmic contacts on the modeling of organic transistors and gives specific rules on how to extract the real transistor parameters (mobility, threshold voltage, and contact resistances) using only electrical measurements. The method consists of a differential analysis of the transfer characteristic curves (current versus gate voltage) and exploits the different functional dependences of current on gate voltage which is induced by the presence of contact resistances. This paper fully covers the situations from constant carrier mobility to power law gate-voltage-dependent mobility, from constant contact resistance to gate-voltage-dependent contact resistance, and in the linear and in the saturation regime of the operation of the transistor. It also gives important criteria for the validation of the extracted parameters to assess whether the conditions for the application of the method are fulfilled. Examples of application to organic transistors showing various behaviors are given and discussed.

In the present paper, a comprehensive self-consistent three-dimensional model is used to analyze physical aspects of the operation of oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs) and to optimize their structures. The impact of the built-in radial confining mechanisms created by oxide apertures, i.e., the influence of their diameters and localizations on radial confinements of both the current injection into VCSEL active regions and electromagnetic fields of successive cavity modes, has been investigated. Basically, there are two extreme cases: the index-guided (IG) VCSELs with the aperture localized at the antinode position of the optical standing wave, characterized by a very low lasing threshold but exhibiting rather poor mode selectivity, and the gain-guided (GG) VCSELs with the aperture shifted to the node position, ensuring usually the single-fundamental-mode operation, but at the expense of much higher lasing threshold. In the present paper, the separate-confinement-oxidatio...

The paper presents the analysis of the three-dimensional polymer network distribution inside the polymer-stabilized ferroelectric liquid-crystal layer based on the laser scanning fluorescence confocal microscopy and a fluorescent dye tagging of the polymer. The studies of polymer-stabilized ferroelectric liquid-crystal structures described in this paper are focused on the comparison of the influence of polymer network in case that the polymerization is initiated in the chevron as well as in the quasibookshelf liquid-crystal molecular orientation. In the case of the chevron structure the regular distribution of the polymer network within the layer leads to the monostability of the chevron state. On the other hand the specific distribution of the polymer in the polymer-stabilized quasibookshelf stripe textures leads to the perfect bistability, improved multiplex driving, and analog gray scale capability.

In this paper, we investigate the formation of a photonic terajet and tune its optical properties using the high-resolution finite-difference time-domain method. A Dirac semimetal is coated onto the surface of a dielectric rod and illuminated with an incident plane wave. The refractive index of the Dirac semimetal can be modulated by changing its Fermi energy. It was demonstrated that the presence of the Dirac semimetal layer can significantly affect the characteristics of the photonic terajet, such as focal distance, intensity, full-width at half maximum, and length.

Since their initial demonstration in 1995, light-emitting electrochemical cells (LECs) have received attention due to potential advantages over traditional polymer optoelectronic devices. A standard LEC consists of two electrodes surrounding an active layer that contains polymer and mobile ions. When a bias is applied, the ions separate and move toward the electrodes, creating a reversible p–n junction analog. Immobilizing the ions after ion dissociation using one of several demonstrated methods to create a “fixed-junction LEC” allows the device to produce a significant photovoltaic response. Recently, our group demonstrated chemically fixed junction LECs using a polymerizable ionic liquid (ATOA-AS) that conferred important advantages over first-generation chemically fixed junction devices, including improved phase compatibility and turn-on time. Early tests showed improvements in the performance of these devices over the first chemically fixed junctions in terms of light-emitting properties. However, their photovoltaic behavior has not been previously investigated. In this paper, we demonstrate photovoltaic behavior in chemically fixed junction LECs based on the polymerizable ionic liquid ATOA-AS as the ion source. While further improvements in the photovoltaic performance of fixed-junction devices still need to be made before they are considered a commercially viable technology, we find that the devices reported here compare well to other single-layer polymer homojunction solar cells and demonstrate an exceptionally high VOC (>1.8 V for some configurations). We also explore the effects that changes to various aspects of device composition and testing procedures have on device performance.

Table-top neutron/x-ray sources are of great interest for uses in neutron activation analyses, in neutron/x-ray radiography, and also in medical applications. Inertial electrostatic confinement fusion (IECF) is a multiple neutron source that can emit neutrons, protons, x rays, etc., as basic products when operated in both continuous and pulsed modes. In this work, D-D neutrons are produced in the steady-state mode using a cylindrical IECF device. The neutron production rate has been optimized by using cathodes having different dimensions and geometrical transparencies. The maximum neutron production rate is found to be approaching 107n/s, using a cathode having eight grid wires and a diameter of 3 cm. The neutrons are successfully used for neutron activation analysis of materials containing explosive elements. X-ray spectrum having a wide range of photon energies (30–70 keV) has been detected from this device while operated in the continuous mode. X-ray radiography of high density objects has also been performed and reported for the first time using the cylindrical IECF source with negative polarity of the central grid in this paper.

Applying atmospheric plasma etching to the surface texturing process of silicon solar cells is a promising strategy for the current photovoltaic manufacturing industry due to its low equipment cost and good fabrication flexibility. This paper investigates the morphology evolution of the silicon surface etched by an Ar/CF4/O2 plasma and the associated optical properties. Results show that the generation of the light trapping structure on the polished silicon surface can be divided into two stages on the basis of the multi-scale morphological images and the quantitative evaluation of roughness parameters. The initial roughening stage mainly involves the formation of high-frequency nanoroughness that can act as an effective medium layer with a gradual refractive index. The resulting optical medium effect can reduce the surface reflectance within a broad range of wavelengths. At the next texturing stage, the low-frequency and high-amplitude microroughness dominates the morphology of the etched silicon surface. It features inverted parabolic structures with a high aspect ratio, which can cause multiple reflections of the incident light. The optical medium effect resulting from the nanoroughness is also inherited. Thus, the anti-reflectance property of the etched silicon surface is greatly improved. This work demonstrates that the light trapping properties of silicon surface etched by atmospheric plasma jet are a synergy of the optical medium effect and geometrical optics. Insights into the morphology evolution and optical properties of the textured surfaces are important for developing a new surface texturing process of silicon solar cells.

Ultra-wide bandgap semiconductors with exceptional advantages have potential use in ultrahigh power, ultrahigh frequency devices, and other applications. In this paper, a series of high-quality Nb-doped ZrxSn1−xO2 (Nb:ZrxSn1−xO2) alloy epitaxial films were prepared on c-plane sapphire substrates by pulsed laser deposition. A greater proportion of Zr successfully widened the optical bandgap of SnO2 up to 4.70 from 4.28 eV. Interestingly, although Nb is a common n-type dopant for SnO2, the conductivity of Nb:ZrxSn1−xO2 decreased with increasing Zr content. The greater activation energy Ea of the films with more Zr contents was determined by variable resistance measurements and rationalized by the first-principles calculations. The higher Zr content leads to a lower conductivity in the films. This is because the electronegativity of Zr is smaller than that of Sn and Nb, making it easier for O to attract electrons from Zr and Nb donating less electrons with increasing Zr content. It leads to more electrons filling the Nb 4d orbital and brings the donor level further down from the conduction band minimum. However, Nb:ZrxSn1−xO2 with a low Zr content of x = 0.1 has good electrical conductivity, with a carrier density of 5.426 × 1020 cm−3 and a resistivity of 7.89 × 10−3 Ω cm, and simultaneously a broadened bandgap of 4.4 eV. Therefore, Nb can act as an effective n-type dopant for ZrxSn1−xO2 with proper Zr content, making Nb-doped ZrxSn1−xO2 promising for developing ultraviolet-transparent conductive electrodes.

Gaseous detectors are widely used in high energy physics, and are attractive choices in tracking systems for cosmic muon imaging, also called muography. Such detectors offer high resolution and high efficiency at reasonable cost for large sizes, however, one of the drawbacks is that the gaseous detection medium must be prevented from contamination by outside air or internal outgassing. Standard systems work with a constant gas flow, leading to regular maintenance in the form of gas cylinder changes, which can be an issue for remote field applications. In this paper we discuss the practical possibilities to reduce gas consumption of an outdoor gaseous tracker, where particularly the gas density change from daily temperature cycling limits the input flow. Such "breathing" effect can be circumvented by well designed buffer volume, which must prevent external air contamination. A realistic MWPC tracking test system with 0.9 square meter area, total volume of 160 l, has been operated for 36 days with a flow of 3 l/day, confirming that the buffer volume, in this case a 50 m long and 10 l volume low diffusion tube, ensures sufficient gas quality. The key effects governing the gas flow dynamics, including diffusion and gas volume change, has been studied quantitatively, leading to practical design prescriptions., Comment: 20 pages, 12 figures. The following article has been submitted to Journal of Applied Physics under Manuscript #JAP21-AR-01969

Investigation of the polarization switching mechanism in ferroelectric hafnium zirconium oxide (HZO) film is of great importance for developing high-quality ferroelectric memory devices. Recently, several works have been reported to describe the switching process of polycrystalline HZO film using the inhomogeneous field mechanism (IFM) model. However, no report has recorded the effect of high pressure annealing (HPA) on the polarization switching process. In this paper, we have carried out a careful investigation on the switching properties of HZO capacitors annealed at 600 °C with various high pressure conditions (1, 50, and 200 atm) using the IFM model. As pressure increases to 200 atm, the ferroelectric properties were enhanced in the HZO films, and, as a result, highest remanent polarization (Pr of 24.5 μC/cm2) was observed when compared with 1 and 50 atm. Similarly, as HPA increases, the HZO capacitors showed a decrement of the coercive field, which significantly improved the switching properties. The time consumed for reversing 80% polarization was 113.1, 105.7, and 66.5 ns for the sample annealed at 1, 50, and 200 atm, respectively. From the IFM model, the smallest active field (2.997 MV/cm) and a uniform distribution of the local electric field (0.304) were observed at 200 atm. Furthermore, the characteristic time constant ( τ 0 ) showed a decreasing trend (34.7, 18.1, and 11.7 ps) with increasing HPA. The improved switching properties and detailed findings recorded in this study may be helpful for developing the ferroelectric hafnia based non-volatile memory applications.

Dynamic control of probe absorption spectrum via vortex beams in multilevel systems has attracted much attention because it provides an avenue to observe unique transport properties. In this paper, we employ experimentally accessible parameters to flexibly control the probe absorption spectrum that shows vortex-induced transparency (VIT) and absorption (VIA) phenomena. Specifically, this system can be served as an optical switch while the vortex beams can act as the control knob, which has the ability to switch from a transparency dip to an absorption peak. Differing from a conventional electromagnetically induced transparency technique, our proposed scheme investigates VIT and VIA by tuning the orbital angular momentum of vortex beams in the resonance and non-resonance cases. Moreover, the collective feature caused by constructive or destructive interference is also studied via adjustable frequency detuning. Our results may provide an efficient approach to study similar phenomena in multilevel quantum systems driven by optical vortex beams.