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Luminescence imaging is currently being used to provide spatially resolved defect in high volume silicon solar cell production. One option to obtain the high throughput required for on the fly detection is the use a silicon line scan cameras. However, when using a silicon based camera, the spatial resolution is reduced as a result of the weakly absorbed light scattering within the camera's chip. This paper address this issue by applying deconvolution from a measured point spread function. This paper extends the methods for determining the point spread function of a silicon area camera to a line scan camera with charge transfer. The improvement in resolution is quantified in the Fourier domain and in spatial domain on an image of a multicrystalline silicon brick. It is found that light spreading beyond the active sensor area is significant in line scan sensors, but can be corrected for through normalization of the point spread function. The application of this method improves the raw data, allowing effecti...

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as “selective silicon ablation” is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as “selective silicon ablation” is proposed which ...

In this paper, we proposed a novel nano-gap thermophotovoltaic (TPV) device made up of thin-films including the radiator. The optical, electrical, and thermal responses and performance of the device were assessed using coupled opto-electro-thermal numerical simulation. The device design consists of a thin-film tungsten radiator which is paired with a thin-film silicon TPV cell across a nanometric vacuum gap. Results were simulated based on experimental properties available in the current literature database. It is discovered that the maximum electrical power output of the thin-film nano-gap TPV device increases with cell temperature up to a certain threshold value due to improvements in generated photocurrent. Thin-film tungsten as a radiator is shown to improve radiative heat transfer above the bandgap compared to conventional bulk tungsten. The effect of cell thickness on responses and performance was also analysed. A 1-μm cell produces better performance over thinner thicknesses at the cost of greater cooling requirements. However, the improvements in output power offset the cooling costs, allowing for consistently favourable efficiencies. Finally, it is shown that the temperature profile in silicon thin-films under convective cooling can be approximated as uniform, simplifying the heat transport modelling process.In this paper, we proposed a novel nano-gap thermophotovoltaic (TPV) device made up of thin-films including the radiator. The optical, electrical, and thermal responses and performance of the device were assessed using coupled opto-electro-thermal numerical simulation. The device design consists of a thin-film tungsten radiator which is paired with a thin-film silicon TPV cell across a nanometric vacuum gap. Results were simulated based on experimental properties available in the current literature database. It is discovered that the maximum electrical power output of the thin-film nano-gap TPV device increases with cell temperature up to a certain threshold value due to improvements in generated photocurrent. Thin-film tungsten as a radiator is shown to improve radiative heat transfer above the bandgap compared to conventional bulk tungsten. The effect of cell thickness on responses and performance was also analysed. A 1-μm cell produces better performance over thinner thicknesses at the cost of greater ...

Depending on the frequency, waves can either propagate (transmission band) or be attenuated (attenuation band) while travelling through a one-dimensional spring-mass chain with internal resonators. The literature on wave propagation through a 1D mass-in-mass chain is vast and continues to proliferate because of its versatile applicability in condensed matter physics, optics, chemistry, acoustics, and mechanics. However, in all these areas, a uniformly periodic arrangement of identical linear resonating units is normally used which limits the attenuation band to a narrow frequency range. To counter this limitation of linear uniformly periodic metamaterials, the attenuation bandwidth in a one-dimensional finite chain with frequency graded linear internal resonators are investigated in this paper. The result shows that a properly tuned frequency graded arrangement of resonating units can extend the upper part of the attenuation band of 1D metamaterial theoretically up to infinity and also increases the lower part of the attenuation bandwidth by around 40% of an equivalent uniformly periodic metamaterial without increasing the mass. Therefore, the frequency graded metamaterials can be a potential solution towards low frequency and wideband acoustic or vibration insulation. In addition, this paper provides analytical expressions for the attenuation and transmission frequency limits for a periodic mass-in-mass metamaterial and demonstrates the attenuation band is generated by the high absolute value of the effective mass not only due to the negative effective mass.

This paper presents a method of measuring the temperature of water near a 1-mm-diameter magnetic sphere under induction heating. The method is based on the temperature dependence of the absorption coefficient of water at a wavelength of 1150 nm. In this study, two-dimensional images of the absorbance, which is the transverse projection of the absorption coefficient of water, were acquired by a near-infrared camera through a telecentric lens, and three-dimensional radial profiles of the temperature were then generated by applying inverse Abel transforms (IATs) to the absorbance profiles. To ensure the spherical symmetry of the temperature and the parallelity of the light rays, which are the conditions necessary to apply an IAT, the onset of free convection and the angles of deflection were evaluated. This paper also presents a method of estimating the heat generation rate in a sphere by fitting the numerical solutions of the thermal conduction equation to the measured temperatures. The temperatures and hea...

Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most of the published papers report on the study of this material through Metal-Insulator-Metal capacitors or Metal-Insulator-Silicon transistors. However, for 3D vertical transistors in which both the channel and gate are polysilicon, the case of silicon-based electrodes cannot be ignored. In this paper, we report the fabrication of various ferroelectric capacitors with silicon (S) based conductive layers and titanium nitride metal (M) electrodes using aluminum doped hafnium oxide (I). The ferroelectric device with silicon-based electrodes shows superior polarization and steeper switching. These results pave the way toward 3D integration for potential 3D NAND replacement.

Fano resonances usually arise when a narrow resonance or discrete state and a broad resonance or continuum state are coupled. In this paper, we theoretically and numerically study asymmetric Fano line shape realized in a photonic crystal nanobeam (PCN) side-coupled with a photonic crystal nanobeam cavity (PCNC). Asymmetric transmission profiles with a transmission peak and a transmission valley are obtained for a low index concentrated cavity mode. The transmission valley, associated with the destructive interference, of our PCN-PCNC structures is deeper than that of a waveguide or Fabry-Perot resonator side-coupled with a PCNC structure. Through changing the position of the photonic band gap (PBG) of the PCN, we can utilize the high or low frequency band edge modes and the Fano transmission profiles can be further controlled. The transmission spectra of our PCN-PCNC structures can be well fitted by the Fano resonance formula and agree qualitatively with the prediction made by the temporal coupled mode theory. By using the band edge modes of the PCN as the continuum state instead of a usual broad resonance, we have demonstrated a new way to generate a prominent Fano resonance. Our PCN-PCNC structures are compact and feasible to achieve large-scale high-performance integrated photonic devices, such as optical modulators or switches.Fano resonances usually arise when a narrow resonance or discrete state and a broad resonance or continuum state are coupled. In this paper, we theoretically and numerically study asymmetric Fano line shape realized in a photonic crystal nanobeam (PCN) side-coupled with a photonic crystal nanobeam cavity (PCNC). Asymmetric transmission profiles with a transmission peak and a transmission valley are obtained for a low index concentrated cavity mode. The transmission valley, associated with the destructive interference, of our PCN-PCNC structures is deeper than that of a waveguide or Fabry-Perot resonator side-coupled with a PCNC structure. Through changing the position of the photonic band gap (PBG) of the PCN, we can utilize the high or low frequency band edge modes and the Fano transmission profiles can be further controlled. The transmission spectra of our PCN-PCNC structures can be well fitted by the Fano resonance formula and agree qualitatively with the prediction made by the temporal coupled mode th...

Dual-energy computed tomography and the Alvarez and Macovski [Phys. Med. Biol. 21, 733 (1976)] transmitted intensity (AMTI) model were used in this study to estimate the maps of density (ρ) and atomic number (Z) of mineralogical samples. In this method, the attenuation coefficients are represented [Alvarez and Macovski, Phys. Med. Biol. 21, 733 (1976)] in the form of the two most important interactions of X-rays with atoms that is, photoelectric absorption (PE) and Compton scattering (CS). This enables material discrimination as PE and CS are, respectively, dependent on the atomic number (Z) and density (ρ) of materials [Alvarez and Macovski, Phys. Med. Biol. 21, 733 (1976)]. Dual-energy imaging is able to identify sample materials even if the materials have similar attenuation coefficients at single-energy spectrum. We use the full model rather than applying one of several applied simplified forms [Alvarez and Macovski, Phys. Med. Biol. 21, 733 (1976); Siddiqui et al., SPE Annual Technical Conference and Exhibition (Society of Petroleum Engineers, 2004); Derzhi, U.S. patent application 13/527,660 (2012); Heismann et al., J. Appl. Phys. 94, 2073–2079 (2003); Park and Kim, J. Korean Phys. Soc. 59, 2709 (2011); Abudurexiti et al., Radiol. Phys. Technol. 3, 127–135 (2010); and Kaewkhao et al., J. Quant. Spectrosc. Radiat. Transfer 109, 1260–1265 (2008)]. This paper describes the tomographic reconstruction of ρ and Z maps of mineralogical samples using the AMTI model. The full model requires precise knowledge of the X-ray energy spectra and calibration of PE and CS constants and exponents of atomic number and energy that were estimated based on fits to simulations and calibration measurements. The estimated ρ and Z images of the samples used in this paper yield average relative errors of 2.62% and 1.19% and maximum relative errors of 2.64% and 7.85%, respectively. Furthermore, we demonstrate that the method accounts for the beam hardening effect in density (ρ) and atomic number (Z) reconstructions to a significant extent.

This paper deals with the calculation of the thermal transport cross section and phase function of longitudinal phonons for scattering by nanoparticles and microparticles. Thermal transport cross section is different from the scattering cross section due to the anisotropic nature of scattering. Exact formulation of the phase function is given for the Rayleigh scattering. This paper also proposes an approximate method to calculate the thermal transport cross section for low contrast scatterers. The formulations developed in this paper will be useful for the predictive modeling of thermal conductivity of practical systems such as nanocomposites and nanomicro particle laden systems.

The paper compares the achievements of quantum well infrared photodetector (QWIP) technology with those of competitive technologies, with the emphasis on the material properties, device structure, and their impact on focal plane array (FPA) performance. Special attention is paid to two competitive technologies, QWIP and HgCdTe, in the long-wavelength IR (LWIR) and very-long-wavelength IR (VLWIR) spectral ranges. Because so far, the dialogue between the QWIP and HgCdTe communities is limited, the paper attempts to settle the main issues of both technologies. Such an approach, however, requires the presentation of fundamental limits to the different types of detectors, which is made at the beginning. To write the paper more clearly for readers, many details are included in the Appendix. In comparative studies both photon and thermal detectors are considered. Emphasis is placed on photon detectors. In this group one may distinguish HgCdTe photodiodes, InSb photodiodes, and doped silicon detectors. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation rate. It is demonstrated that LWIR QWIP’s cannot compete with HgCdTe photodiodes as single devices, especially at higher operating temperatures (>70 K). This is due to the fundamental limitations associated with intersubband transitions. The advantage of HgCdTe is, however, less distinct at temperatures lower than 50 K due to problems inherent in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though QWIP is a photoconductor, several of its properties, such as high impedance, fast response time, long integration time, and low power consumption, comply well with the requirements imposed on the fabrication of large FPA’s. Due to a high material quality at low temperatures, QWIP has potential advantages over HgCdTe in the area of VLWIR FPA applications in terms of array size, uniformity, yield, and cost of the systems. The performance figures of merit of state-of-the-art QWIP and HgCdTe FPA’s are similar because the main limitations come from the readout circuits. Performance is, however, achieved with very different integration times. The choice of the best technology is therefore driven by the specific needs of a system. In the case of readout-limited detectors a low photoconductive gain increases the signal-to-noise ratio and a QWIP FPA can have a better noise equivalent difference temperature than an HgCdTe FPA with a charge well of similar size. Both HgCdTe photodiodes and QWIP’s offer multicolor capability in the MWIR and LWIR range. Powerful possibilities offered by QWIP technology are associated with VLWIR FPA applications and with multicolor detection. The intrinsic advantage of QWIP’s in this niche is due to the relative ease of growing multicolor structures with a very low defect density.

Vertical stacking of organic light emitting devices (OLEDs) that emit the three primary colors is a means for achieving full-color flat panel displays. The physics, performance, and applications of stacked OLEDs (SOLEDs) are discussed in this and the following paper (Papers I and II, respectively). In Paper I, we analyze optical microcavity effects that can distort the emission colors of SOLEDs if not properly controlled, and describe design principles to minimize these parasitic effects. We also describe the fabrication and operating characteristics of transparent contacts that are an integral part of SOLEDs. We demonstrate that both metal-containing and metal-free transparent electrodes can serve as efficient electron and hole injectors into the stacked organic semiconductor layers. Two different transparent SOLED structures (metal-containing and metal-free) that exhibit sufficient performance for many full-color display applications will be discussed in Paper II.

This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobi...

Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

The development and optimization of sputtering techniques for the deposition of refractory metal thin films for very large scale integration (VLSI) barrier and encapsulation layers is of significant concern for the microelectronic fabrication industry. A number of directed sputtering techniques such as collimation and low pressure longthrow configurations have been applied to this problem. This paper addresses a number of issues present in the understanding and simulation of the growth of films deposited by directed sputtering techniques over VLSI topography. In particular the role of high energy neutral gas atoms reflected from the target is investigated as a source of resputtering. Also addressed is the creation of a low density porous film on the sidewalls of vias/contacts due to oblique incident fluxes on these areas. Experimentally Ti and W films are deposited at pressures varying from 0.2 to 12.0 mTorr with and without collimators present. A number of re-emission/resputtering mechanisms were investigated using a Monte Carlo growth simulator and it was found that the model most consistent with the experimental films was an assumption of resputtering due to reflected neutrals. A significant result is a dramatic increase in the resputtering rate when a collimator was present due to a relative increase in the reflected neutral flux. Finally, the paper presents an analysis of the effect of pressure on bottom and step coverage in high aspect topography.The development and optimization of sputtering techniques for the deposition of refractory metal thin films for very large scale integration (VLSI) barrier and encapsulation layers is of significant concern for the microelectronic fabrication industry. A number of directed sputtering techniques such as collimation and low pressure longthrow configurations have been applied to this problem. This paper addresses a number of issues present in the understanding and simulation of the growth of films deposited by directed sputtering techniques over VLSI topography. In particular the role of high energy neutral gas atoms reflected from the target is investigated as a source of resputtering. Also addressed is the creation of a low density porous film on the sidewalls of vias/contacts due to oblique incident fluxes on these areas. Experimentally Ti and W films are deposited at pressures varying from 0.2 to 12.0 mTorr with and without collimators present. A number of re-emission/resputtering mechanisms were investi...

The gated polysilicon field emitter arrays coated with diamondlike carbon (DLC) were fabricated by a transfer mold method using anisotropic etching of Si and the deposition of DLC using methane ion beam. This paper describes significant enhancement in electron emission and considerable reduction in turn-on voltage for the emitter arrays by the DLC coating. In addition, the paper discusses the emission mechanism from the energy band diagram of a field emitter coated with a sufficiently thin dielectric material having a low electron affinity, and shows that an effective work function of the DLC coated polysilicon field emitter is about 2.9 eV.

Cantilever beams under the influence of electrostatic force form an important subclass of microelectromechanical system(MEMS) and nanoelectromechanical system. Most of the studies concerning these micro-nano resonators are centered around uniform cantilever beams. In this paper, we have investigated another class of micro-resonators consisting of non-uniform cantilever beams. The study is focused around investigating pull-in voltage and resonance frequency of non-uniform cantilever beams when they operate in the linear regime about different static equilibriums. In this paper, we term this frequency as “linear frequency.” Calculation of the linear frequency is done at different static equilibriums corresponding to different DC voltages. We have studied two classes of beams, one with increasing cross sectional area from the clamped edge (diverging beam) and other with decreasing cross sectional area from the clamped edge (converging beam). Within each class, we have investigated beams with linear as well as quartic variation in width. We start by obtaining Euler beam equation for non-uniform cantilever beams considering large deflection and their corresponding exact mode shapes from the linear equation. Subsequently, using the Galerkin method based on single mode approximation, we obtain static and dynamic modal equations for finding pull-in voltage and resonance frequency as a function of DC voltage, respectively. We found that the linear frequency of converging beams increases with increase in non-uniform parameter (α) while those of diverging beams decreases with α. A similar trend is observed for pull-in voltage. Within the converging class, beams with quartic variation in width show significant increase in both frequency and pull-in voltage as compared to corresponding linearly tapered beams. In quantitative terms, converging beams with quartic variation in width and α=−0.6 showed an increase in linear frequency by a factor of 2.5 times and pull-in voltage by 2 times as compared to commonly used uniform beams. Our investigation can prove to be a step forward in designing highly sensitive MEMS sensors and actuators.

In this paper, we report on the wave transmission characteristics of a hybrid one dimensional (1D) medium. The hybrid characteristic is the result of the coupling between a 1D mechanical waveguide in the form of an elastic beam, supporting the propagation of transverse waves and a discrete electrical transmission line, consisting of a series of inductors connected to ground through capacitors. The capacitors correspond to a periodic array of piezoelectric patches that are bonded to the beam and that couple the two waveguides. The coupling leads to a hybrid medium that is characterized by a coincidence condition for the frequency/wavenumber value corresponding to the intersection of the branches of the two waveguides. In the frequency range centered at coincidence, the hybrid medium features strong attenuation of wave motion as a result of the energy transfer towards the electrical transmission line. This energy transfer, and the ensuing attenuation of wave motion, is alike the one obtained through internal resonating units of the kind commonly used in metamaterials. However, the distinct shape of the dispersion curves suggests how this energy transfer is not the result of a resonance and is therefore fundamentally different. This paper presents the numerical investigation of the wave propagation in the considered media, it illustrates experimental evidence of wave transmission characteristics and compares the performance of the considered configuration with that of internal resonating metamaterials. In addition, the ability to conveniently tune the dispersion properties of the electrical transmission line is exploited to adapt the periodicity of the domain and to investigate diatomic periodic configurations that are characterized by a richer dispersion spectrum and broader bandwidth of wave attenuation at coincidence. The medium consisting of mechanical, piezoelectric, and analog electronic elements can be easily interfaced to digital devices to offer a novel approach to smart materials.

Although Fowler and Nordheim developed the basics of field emission nearly one century ago with their introduction of the Fowler-Nordheim equation (FNE), the topic continues to attract research interest particularly with the development of new materials that have been proposed as field emitters. The first order analysis of experiments typically relies upon the FNE for at minimum a basic understand of the physical emission process and its parameters of emission. The three key parameters in the FNE are the work function, emission area, and field enhancement factor, all of which can be difficult to determine under experimental conditions. This paper focuses in particular, on the field enhancement factor β. It is generally understood that β provides an indication of the surface roughness or sharpness of a field emitter cathode. However, in this paper, we experimentally and computationally demonstrate that cathodes with highly similar surface morphologies can manifest quite different field enhancements solely through having different emission regions. This fact can cause one to re-interpret results in which a single sharp emitter is proposed to dominate the emission from a field emitting cathode.

This paper provides a detailed description explaining how to calculate the relation between the silicon Raman frequency and local stress or strain in the silicon, applied to stress measurements in microelectronics. This relation is well known for measurements from the (100) surface of silicon. However, it is often used in the wrong way, neglecting non-zero stress tensor elements. Especially, in current 3D microelectronics technology, where the stress caused by through Si vias or micro-bumps is of large importance, the vertical stress component, which highly affects the measured Raman frequency shift, is often erroneously neglected. In addition, the equations for the (100) surface are also often used incorrectly for cross-sectional measurements from a (110) surface. In this paper, different ways to calculate the relation between Raman frequency and triaxial stress, and the related Raman peak intensities, are discussed in detail.

In previous papers, a new model was proposed for the optical dielectric function of zinc blende semiconductors and was applied successfully to the alloy series AlxGa1−xAs. It was found to be more generally valid than any previous model. In this paper, it is used to obtain an analytic expression for the dielectric function of the II‐VI compound CdTe at room temperature. Unlike the previous application, additional polynomial terms in the real part of the optical dielectric function are not introduced, so that the Kramers‐Kronig relationship between the real and imaginary parts of the dielectric function is satisfied exactly. As demonstrated before, the model covers not only the entire photon energy range of the given spectral data, but also is valid below and somewhat above the given spectral range. This is advantageous especially when spectral data are not provided in the range of interest, or when joining two separate data causes an artificial discontinuity. The model determines the optical dielectric function in the limit as the line broadening approaches zero, which is useful in calculating the optical dielectric function at all temperatures. For demonstration, the optical dielectric function at 70 K and 600 K is calculated and presented.

One of the obstacles preventing wireless power transfer from becoming ubiquitous is their leakage of power: high-amplitude electromagnetic fields that can interfere with other electronic devices, increase health concerns, or hinder power metering. In this paper, we present near-field plates (NFPs) as a novel method to tailor the electromagnetic fields generated by a wireless power transfer system while maintaining high efficiency. NFPs are modulated arrays or surfaces designed to form prescribed near-field patterns. The NFP proposed in this paper consists of an array of loaded loops that are designed to confine the electromagnetic fields of a resonant transmitting loop to the desired direction (receiving loop) while suppressing fields in other directions. The step-by-step design procedure for this device is outlined. Two NFPs are designed and examined in full-wave simulation. Their performance is shown to be in close agreement with the design predictions, thereby verifying the proposed design and operation. A NFP is also fabricated and experimentally shown to form a unidirectional wireless power transfer link with high efficiency.

In this paper, we consider a plane electromagnetic wave incident onto a dielectric plate, which has one surface covered with a thin layer of metal. An oblique incident angle was considered for the TE (s polarization in optic) and TM (p polarization) plane waves. The thin metal layer is treated as an infinitesimal thickness. It was characterized by a surface conductivity and accounted for by a tangential magnetic field component step induced by the current flow in the metal layer. Compact expressions, which describe the reflection, transmission and absorption in a dielectric plate covered with a thin layer of metal, have been obtained. It was shown that by choosing the appropriate surface conductivity, the Fabry-Perot transmission resonances can be shifted to the position where the maximum reflection is observed in the case of an uncovered dielectric. On the other hand, the elimination of the Fabry-Perot resonances can be also achieved by choosing a proper metal surface conductivity. Measurements of the reflection from the glass covered with a thin layer of metal have been performed in a wide microwave frequency range (2–12 GHz) revealing a large difference in the measured reflection coefficient from the dielectric and metalized surfaces. The measured results fit well with those calculated by employing analytical expressions obtained in this paper.

International audience; In this paper, the influence of disorder on 1D periodic lattice of resonant scatterers is inspected. These latter have multiple resonance frequencies which produce band gaps in the transmission spectrum. One peculiarity of the presented system is that it is chosen with a nearly perfect overlap between the Bragg and the second hybridization band gaps. In the case of a perfectly ordered lattice, and around this overlap, this produces a narrow transparency band within a large second bandgap. As expected, the effect of the disorder is generally to increase the width of the band gaps. Nevertheless, the transparency band appears to be robust with respect to an increase in the disorder. In this paper, we study this effect by means of experimental investigations and numerical simulations.

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature. (C) 2014 AIP Publishing LLC.

Optical transport behavior of organic photo-voltaic devices with nano-pillar transparent electrodes is investigated in this paper in order to understand possible enhancement of their charge-collection efficiency. Modeling and simulations of optical transport due to this architecture show an interesting regime of length-scale dependent optical characteristics. An electromagnetic wave propagation model is employed with simulation objectives toward understanding the mechanism of optical scattering and waveguide effects due to the nano-pillars and effective transmission through the active layer. Partial filling of gaps between the nano-pillars due to the nano-fabrication process is taken into consideration. Observations made in this paper will facilitate appropriate design rules for nano-pillar electrodes. (C) 2014 AIP Publishing LLC.

This paper presents a detailed theory which describes the response of a focused interferometer when a modulated laser source is incident upon a layered sample. In order to solve this problem it is necessary to solve the thermoelastic equations for a layered sample. The paper presents an analytical solution obtained using a symbolic manipulation program (reduce). In particular, we point out that the analytical form of the solution is necessary to achieve numerically stable results. In addition to calculating the actual displacement of the sample surface, the response of the instrument is considered in detail, in terms of the refractive index changes of the air above the sample and the optical transfer function of the probe optics.

The time centroid of the current pulse induced at the anode of a semiconductor drift detector is calculated as a function of the interaction coordinate for arbitrary drifting fields. The effects of its behavior on the determination of the absolute position of the interaction point are studied. For a typical bias condition of the detector, the paper shows that an error up to few hundred micrometers is made in the position reconstruction of the event if the described effects of the induction are not taken into account. The paper also shows that the time shift due to the perturbation of the drifting field caused by the discreteness of the field electrodes, is only of less than 1 ns, and therefore negligible in most applications.

Microwave interferometry appears to be a promising method for the study of wave and mass velocity in shocked dielectric materials. This paper discusses the mathematics concerning the frequencies and amplitudes in the microwave reflections from the shock wave and from an impacting piston which drives the shock into a nonreacting porous solid. Methods for the determination of the state variables in the compressed region between the shock wave and the piston are given. In this paper, these methods have been confirmed by experimental measurements in nonenergetic materials in which there is no ionization from chemical reaction. The microwave reflection from the shock wave traveling through an inert media is shown to result from a dielectric discontinuity at the wave front. Studies on energetic materials (explosives and propellants) are considered in a companion paper where ionization associated with the chemical reactions is required to explain the increased reflection from the shock front.

The electromagnetic field generated by a horizontal electric dipole in the air over a dielectric‐coated conducting or dielectric half‐space is evaluated in an earlier paper subject to the conditions k20≪k21≪‖k22‖ on the wave numbers of the three regions and the condition k1l≤ 0.6 on the thickness l of the dielectric layer. Unintentionally, the severe condition ‖k2 l‖2≪1 was also imposed in the determination of the field in the dielectric layer and the half‐space below it. That restriction is removed in this paper and new complete formulas are derived which have wide potential application.

In a recent paper Yokoyama [Mol. Cryst. Liq. Cryst. 165, 265 (1988)] showed that a correct thermodynamic definition of the anchoring energy at the interface between a nematic liquid crystal (NLC) and another medium requires the preliminary choice of a ‘‘Gibbs dividing surface.’’ As a consequence of this, the measured value of the anchoring energy coefficient can depend on which method is used to perform the experiment. This dependence probably explains the large discrepancies that are often reported in the literature between anchoring energy coefficients measured on the same substrate by different authors. To test this important point the anchoring energy coefficient at a SiOx nematic interface has been measured by using two different methods at the same time: a reflection light method and a transmitted light method. Both these methods have been already used in the literature. In this paper the latter method is analyzed in detail and it is shown that its accuracy is greatly reduced by the presence of spurious bulk contributions. To increase accuracy, a new experimental procedure is proposed that exploits the differing dependence of surface and bulk contributions on the intensity of the magnetic field. This new method allows one to separate bulk and surface contributions without using fitting procedures. Therefore both the anchoring energy and information on the bulk director distortion can be directly obtained from the experiment. The transmitted light and the reflected light methods are used simultaneously to measure the azimuthal anchoring energy coefficient at the SiOx nematic interface on the same NLC sample at the same temperatures. A satisfactory agreement between the anchoring energy coefficients measured by the two methods is found.

In this paper the authors applied an original transfer function method for calculations of radiation patterns in the case of Bessel circular transducers. It is known that the amplitudes of some natural vibration modes of circular plates are Bessel functions of zero order [R. R. Aggarval, JASA 24, 463 (1952)]. In the paper the natural vibrational modes of a circular disk‐shaped ultrasonic transducer were employed. As it follows from the numerical calculations, it is possible to obtain for Bessel‐like transducers the nondiffracting main lobe. The latter is in accordance with the suggestions of the paper [J. Durnin, J. Opt. Soc. Am. 4, 651 (1987)].

In this paper piezoelectric stress transducers are proposed on the base of GaAs and AlxGa(1−x)As. These materials exhibit reasonable piezoelectric properties and since GaAs based integrated circuits have reached a high maturity they are a promising choice for integrated stress transducers. An additional feature of the high band‐gap material GaAs is its superior high‐temperature performance in comparison with Si. In this paper the piezoelectric and related properties of GaAs and AlxGa(1−x) are discussed. Therefore the piezoelectric tensors for the commonly used (100) and (111) oriented substrates are derived. These calculations are verified by measurements of some realized sensors using different substrate orientations.

The recognition of subsurface defects is an important aspect of inverse heat transfer problems. The solution of direct problems is the basis of the inverse problems. In this paper, based on the non-Fourier heat conduction equation and using the image method and the wave function expansion method, an analytical method to study the multiple scattering of thermal waves and temperatures from the subsurface defect in semi-infinite functionally graded materials (FGMs) is presented. A general solution of the scattered fields of thermal waves is obtained. Without loss of generality, the incidence of thermal waves excited by the periodically modulated laser and the subsurface defect are treated as the line heat source and a cylindrical cavity with thermal insulation in the modelling, respectively. The amplitude of the changes in temperature at the frontal surface in the cylindrical defect due to different physical and geometrical parameters is analysed, discussed, and presented graphically using the analytical method. The significant changes in the temperature were found to occur at the frontal surface because of the existence of conducting defects. In addition, the influence of the defect state on the temperature was found to also be related to the nonhomogeneous parameters of FGMs, the wavenumber, the frequency of the thermal waves, and the depth of the buried defects. The numerical results and method proposed in this paper are expected to be applied for the analysis of infrared thermal waves in non-destructive evaluations of functionally graded materials and inverse problems of mathematical physics.

This paper presents a secure inductive wireless power transfer (WPT) system for electric vehicle (EV) applications, such as charging the electric devices inside EVs and performing energy exchange between EVs. The key is to employ chaos theory to encrypt the wirelessly transferred energy which can then be decrypted by specific receptors in the multi-objective system. In this paper, the principle of encrypted WPT is first revealed. Then, computer simulation is conducted to validate the feasibility of the proposed system. Moreover, by comparing the WPT systems with and without encryption, the proposed energy encryption scheme does not involve noticeable power consumption.

Ethernet transformers are mass produced broadband signal coupling transformers, used for interfacing copper twisted-pair networking cable to Ethernet devices. In this paper, we present a process for fabricating Ethernet transformers by embedding ferrite core materials within printed circuit board, and then fabricating the windings around the embedded core. Sample transformers were fabricated with different winding configurations and core materials. It is then possible to clad the board with copper and fabricate routes or mount components to the board faces, making the transformer a zero-footprint component. The sample transformer's performance is experimentally evaluated, and the results are presented in this paper. All transformers were found to successfully couple up to 1000Base-T Ethernet.

Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier ( ϕ n ) is equal to the hole injection barrier ( ϕ p ) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ n > ϕ p under the condition of electron mobility ( μ 0 n ) > hole mobility ( μ 0 p ), whereas the result for the case of μ 0 n μ 0 p , is opposite. The largest CBF when μ 0 n = μ 0 p can be achieved in the case of ϕ n = ϕ p in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs.

This paper theoretically and numerically investigates the propagation of Lamb waves in a one-dimensional phononic crystal slab bordered with anti-symmetric boundary layers. The results show that the band structure of the anti-symmetric boundary phononic crystal is significantly different from those presented in the papers available. The eigenmodes displacement fields reveal that there is an essential distinction in the formation of the band gap between the anti-symmetric and the symmetric boundary model. On the other hand, the thickness of the boundary layers can remarkably change the width and the location of the band gaps. Furthermore, the variation of the phononic crystal band gaps and the band pinning elimination show the band gaps are sensitive to the degree of stagger of the boundary layers, and different band gap has a different response to the profile of the boundary. In other words, the topological distribution of the boundary layer has an influence on the band structures.

Previous studies on the interaction of collinear acoustic waves have been devoted to waves propagating along pure modes directions of cubic crystals. In this paper, we show that the calculations can be readily extended to all crystal point groups. Nonlinearity parameters characterizing the nonlinear interactions are defined here. The effective third order elastic constants involved in the parameters can be calculated by using the method presented in this paper. Our results are very useful for the study of elastic nonlinearity of crystals with any given symmetry.

In this paper, we modeled a quantum dot at near proximity to a gap plasmon waveguide to study the quantum dot-plasmon interactions. Assuming that the waveguide is single mode, this paper is concerned about the dependence of spontaneous emission rate of the quantum dot on waveguide dimensions such as width and height. We compare coupling efficiency of a gap waveguide with symmetric configuration and asymmetric configuration illustrating that symmetric waveguide has a better coupling efficiency to the quantum dot. We also demonstrate that optimally placed quantum dot near a symmetric waveguide with 50 nm × 50 nm cross section can capture 80% of the spontaneous emission into a guided plasmon mode.

The study presented in this paper relates mostly to impact testing of polymers and similar materials to measure their crack resistance and dynamic properties. For some impact testers, then, at low impact velocities the initial transient forces can be very small and short lived so as to be insignificant. This is so that the specimen mostly experiences a steadily increasing strain until it fails. At higher impact velocities both transient and generally increasing strain are both significant in taking the specimen to its failure point. With very high impact velocities, the specimen can fail mostly due to the initial impact forces. It is possible in some cases to cushion the specimen from the initial higher impact transients and related secondary effects such as bounce at the contact points. This is if a steadily increasing strain to fail the specimen is the main requirement. Of course, this is only feasible when the impact forces are not too dominant. However, as material technology has rapidly advanced so dynamic as well as toughness properties of materials have much improved. Also, the variety and mix of properties now available in different materials has greatly increased. With these trends, testing that can combine well impact, strong dynamic forces and steadily increasing strain loading of the specimen is of increasing interest. This can be so that the force‐time curve of such testing to failure of a specimen can also be regarded as its dynamic performance signature. A problem is in arranging and monitoring the dynamic forces of such tests so as to be able to analyze effectively test results. These are the factors examined in this paper.

Theoretical studies and numerical simulations on design, performance, and improvements of terahertz quantum-well photodetector (THz QWP) are presented. In the first part of this paper, we discuss the device band structure resulting from a self-consistent solution and simulation results. First, the temperature dependence of device characteristics is analyzed. Next, we deduce the condition of optimal doping concentration for maximizing dark current limited detectivity Ddet* when QWP is lightly doped. Accordingly, unlike in previously published reports, doping concentration is not fixed and is selected by the above condition. In the second part of this paper, we propose two schemes for improving operation temperature. The first is to incorporate an optical antenna which focuses incident THz wave. Numerical results show that the QWP with peak frequency higher than 5.5 THz is expected to achieve background-noise-limited performance at 77 K or above when employing a 106 times enhancement antenna. The second sch...

This paper presents an experimental protocol for absolute calibration of photo-detectors. Spectral characterization is achieved by a methodology that unlike the usual line emissions-based method, hinges on the Bremsstrahlung radiation of a Soft X-Ray (SXR) tube only. Although the proposed methodology can be applied virtually to any detector, the application presented in this paper is based on Tore Supra's SXR diagnostics, which uses Silicon Surface Barrier Diodes. The spectral response of these n-p junctions had previously been estimated on a purely empirical basis. This time, a series of second-order effects, like the spatial distribution of the source radiated power or multi-channel analyser non linearity, are taken into account to achieve accurate measurements. Consequently, a parameterised physical model is fitted to experimental results and the existence of an unexpected dead layer (at least 5 μm thick) is evidenced. This contribution also echoes a more general on-going effort in favour of long-term quality of passive radiation measurements on Tokamaks.

Raman spectroscopy represents an insightful characterization tool in electronics, which comprehensively suits the technological needs for locally and quantitatively assessing crystal structures, domain textures, crystallographic misalignments, and residual stresses in piezoelectric materials and related devices. Recent improvements in data processing and instrumental screening of large sampling areas have provided Raman spectroscopic evaluations with rejuvenating effectiveness and presently give spin to increasingly wider and more sophisticated experimental explorations. However, the physics underlying the Raman effect represents an issue of deep complexity and its applicative development to non-cubic crystallographic structures can yet be considered in its infancy. This review paper revisits some applicative aspects of the physics governing Raman emission from crystalline matter, exploring the possibility of disentangling the convoluted dependences of the Raman spectrum on crystal orientation and mechanical stress. Attention is paid to the technologically important class of piezoelectric materials, for which working algorithms are explicitly worked out in order to quantitatively extract both structural and mechanical information from polarized Raman spectra. Systematic characterizations of piezoelectric materials and devices are successively presented as applications of the developed equations. The Raman response of complex crystal structures, described here according to a unified formalism, is interpreted as a means for assessing both crystallographic textures and stress-related issues in the three-dimensional space (thus preserving their vectorial and tensorial nature, respectively). Statistical descriptions of domain textures based on orientation distribution functions are also developed in order to provide a link between intrinsic single-crystal data and data collected on polycrystalline (partly textured) structures. This paper aims at providing rigorous spectroscopic foundations to Raman approaches dealing with the analyses of functional behavior and structural reliability of piezoelectric devices.

Three papers published recently [P. M. Young, C. H. Grein, H. Ehrenreich, and R. H. Miles, J. Appl. Phys. 74, 4774 (1993); G. M. Williams, J. Appl. Phys. 77, 4153 (1995); C. H. Grein, M. E. Flatte, H. Ehrenreich, and R. H. Miles, J. Appl. Phys. 77, 4156 (1995)] concerning the comparison of theoretically predicted performance of HgCdTe photodiodes with InAs/InGaSb superlattice photovoltaic detectors are obscure with respect to optimal selection of HgCdTe photodiode structures. Both Comments [G. M. Williams, J. Appl. Phys. 77, 4153 (1995); C. H. Grein, M. E. Flatte, H. Ehrenreich, and R. H. Miles, J. Appl. Phys. 77, 4156 (1995)] have not noticed the important results of papers published by Humpreys [Infrared Phys. 23, 171 (1983); Infrared Phys. 26, 337 (1986)], who critically reexamined the role of a radiative mechanism in the detection of infrared radiation. To explain our point of view on competition between InAs/InGaSb SLs and ‘‘bulk’’ HgCdTe detectors, we present a generalized model of an infrared photo...

This paper presents the findings of investigating core-shell multiple quantum well nanowire light-emitting diodes (LEDs). A fully self-consistent three dimensional model that solves Poisson and drift-diffusion equations was employed to investigate the current flow and quantum-confined stark effect. The core-shell nanowire LED showed a weaker droop effect than that of conventional planar LEDs because of a larger active area and stronger recombination in nonpolar quantum wells (QWs). The current spreading effect was examined to determine the carrier distribution at the sidewall of core-shell nanowire LEDs. The results revealed that a larger aspect ratio by increasing the nanowire height could increase the nonpolar-active area volume and reduce the droop effect at the same current density. Making the current spreading length exceed a greater nanowire height is critical for using the enhancement of nonpolar QWs effectively, when an appropriate transparent conducting layer might be necessary. In addition, this paper presents a discussion on the influences of the spacing between each nanowire on corresponding nanowire diameters.

Eddy current pulsed thermography (ECPT) applies induction heating and a thermal camera for non-destructive testing and evaluation (NDT&E). Because of the variation in resultant surface heat distribution, the physical mechanism that corresponds to the general behavior of ECPT can be divided into an accumulation of Joule heating via eddy current and heat diffusion. However, throughout the literature, the heating mechanisms of ECPT are not given in detail in the above two thermal phenomena and they are difficult to be separated. Nevertheless, once these two physical parameters are separated, they can be directly used to detect anomalies and predict the variation in material properties such as electrical conductivity, magnetic permeability and microstructure. This paper reports physical interpretation of these two physical phenomena that can be found in different time responses given the ECPT image sequences. Based on the phenomenon and their behaviors, the paper proposes a statistical method based on single channel blind source separation to decompose the two physical phenomena using different stages of eddy current and thermal propagation from the ECPT images. Links between mathematical models and physical models have been discussed and verified. This fundamental understanding of transient eddy current distribution and heating propagation can be applied to the development of feature extraction and pattern recognition for the quantitative analysis of ECPT measurement images and defect characterization.

For a heat assisted magnetic recording system to be successful, it must deliver heat to a small spot on a magnetic disk without being damaged by the applied power. This paper shows that such conditions may not be easily attained in systems that use laser energy and plasmonic near field transducers. It is also shown that the analysis and design of the near field transducers cannot rely on numerical integration of the conventional Maxwell equations of electrodynamics of continuous media, because such equations implicitly incorporate numerous assumptions that are not valid in nanoscale systems. Here, we examine assumptions inherent in the derivation of these equations and point out which assumptions are violated if they are applied to the metallic nanoscale elements of heat assisted magnetic recording systems. The main body of the paper focuses on the well-known experimental results that support our conclusions while the derivations are relegated to the appendices.

This paper analyzes the optical polarization characteristics and internal quantum efficiency (IQE) of an AlGaN based polar, nonpolar, and semipolar deep ultra-violet (UV) light emitting diode (LED). A one dimensional model is used to solve drift-diffusion, Poisson equations, and 6 × 6 k·p Schrodinger equations to investigate band structure and emission characteristics. The light emission polarization ratios of c-plane, nonpolar, and semipolar AlGaN based deep UV LEDs with different Al compositions and injection current were studied. The study shows that the optical polarization of the c-plane AlGaN based deep UV LED is dominated by the out-plane polarization as the Al composition increases. For nonpolar and semipolar structures, the light polarization direction is mainly dominated by the in-plane polarized light which is good for the surface emitting. Finally, influences of the IQE by changing the p-type activation energy, growth orientation, and nonradiatve lifetime are studied in this paper.

This paper analyzes some features of systems intended to remotely detect concealed radioactive materials by using a focused THz radiation. This concept is based on possibility to focus high-power THz radiation in a small spot where the wave field exceeds the breakdown threshold. However, in the absence of any sources of ionization, the probability to have in this breakdown-prone volume any seed electrons is very low. Thus, high breakdown rate in a series of THz pulses will indicate the presence of concealed radioactive materials in the vicinity of a focused wave beam. The goal of the present paper is to determine by using the statistical theory THz pulse duration required for reliable initiation of the discharge. Then, the detectable mass of the radioactive material is determined as the function of distance and of the THz wave power and pulse duration. Lastly, possible benefits from using pulse compressors, which shorten the pulse duration but increase the wave power and, hence, the breakdown-prone volume, are analyzed. It is shown that the use of pulse compressors can significantly improve the sensitivity of THz gyrotron based systems for remote detection of concealed radioactive materials.

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.