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A novel method was developed for studying the ink-paper interface and the structural variations of a deposited layer of ink. Combining high-resolution x-ray tomography with laser ablation, the depth profile of ink (toner), i.e., its varying thickness, could be determined in a paper substrate. X-ray tomography was used to produce the 3D structure of paper with about 1 μm spatial resolution. Laser ablation combined with optical imaging was used to produce the 3D structure of the printed layer of ink on top of that paper with about 70 nm depth resolution. Ablation depth was calibrated with an optical profilometer. It can be concluded that a toner layer on a light-weight-coated paper substrate was strongly perturbed by protruding fibers of the base paper. Such fibers together with the surface topography of the base paper seem to be the major factors that control the leveling of toner and its penetration into a thinly coated paper substrate.

We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility.

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes.

Defects influence the electronic and optical properties of crystals, so their identification is crucial to develop device technology for materials of micro-/optoelectronics and photovoltaics. The identification requires the accurate calculation of the electronic transitions and the paramagnetic properties of defects. The achievable accuracy is strongly limited in the case of the (semi)local approximations to density functional theory, because of the underestimation of the gap and of the degree of localization. In the past two decades, hybrid functionals, mixing semilocal and nonlocal exchange semiempirically, have emerged as an alternative. Very often, however, the parameters of such hybrids have to be tuned from material to material. In this paper, we describe the theoretical foundations for the proper tuning and show that if the relative positions of the band edge states are well reproduced, and the generalized Koopmans's theorem is fulfilled by the given parameterization, the calculated defect levels and localizations can be very accurate. As demonstrated here, this can be achieved with the two-parameter Heydt-Scuseria-Ernzerhof hybrid, HSE(α,μ) for diamond, Si, Ge, TiO2, GaAs, CuGaS(Se)2, GaSe, GaN, and Ga2O3. The paper describes details of the parameterization process and discusses the limitations of optimizing HSE functionals. Based on the gained experience, future directions for improving exchange functionals are also provided.

III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation–dislocation and carrier–dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-ba...

Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. In this paper, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. The purpose of using the architecture of nand flash memories is to reuse a mature technology to create large arrays of silicon qubits. Current high-density nand flash memories use sufficiently small FG cells to make the number of electrons stored in each cell small and countable. The high packing density of these cells creates mutual capacitive couplings that can be used to generate cell-to-cell interactions. We explore these characteristics to derive an Ising Hamiltonian for the FG system in the single-electron regime. Considering the size of a cell (10 nm), the ideal operation temperature of a quantum annealer based on FG cells is estimated to be approximately that of liquid nitrogen. Assuming the parameters of a commercial 64 Gbit nand, we estimate that it is possible to create 2-megabyte (MB) qubit systems solely using conventional fabrication processes. Our proposal demonstrates that a large qubit system can be obtained as a natural extension of the miniaturization of commercial-grade electronics, although more effort will likely be required to achieve high-quality qubits.Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. In this paper, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. The purpose of using the architecture of nand flash memories is to reuse a mature technology to create large arrays of silicon qubits. Current high-density nand flash memories use sufficiently small FG cells to make the number of electrons stored in each cell small and countable. The high packing density of these cells creates mutual capacitive couplings that can be used to generate cell-to-cell interactions. We explore these characteristics to derive an Ising Hamiltonian for the FG system in the single-electron regime. Considering the size of a cell (10 nm), the ideal operation temperature of a quantum annealer based on FG cells is estimated to be approximately that of liquid nitr...

In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the influence of a constant magnetic field regime. It is observed that at low temperature and relatively strong applied magnetic fields, electromagnetic defective transmission spectra corresponding to the two decoupled right- and left-handed polarized modes possess a step-like transmission feature which is referred to as “quantum Hall defect modes” (QHD modes or QHDs) in this paper. Tunable growing transitional transmission steps for QHDs with increasing magnetic field intensity were shown to be possible. Observation of sensitive magneto-transmission oscillations to the thermal excitations in the last plateaus slowly ascending toward unity is another special feature noted in this work. The results of this study, which is carried out based on rapid standard calculations for the transfer matrix approach is supplied with commercial simulations marking the first PHE system, promise an proper candidate for new photonic applications, especially new tunable magneto-based lenses and photonic magneto-thermal sensors.In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the influence of a constant magnetic field regime. It is observed that at low temperature and relatively strong applied magnetic fields, electromagnetic defective transmission spectra corresponding to the two decoupled right- and left-handed polarized modes possess a step-like transmission feature which is referred to as “quantum Hall defect modes” (QHD modes or QHDs) in this paper. Tunable growing transitional transmission steps for QHDs with increasing magnetic field intensity were shown to be possible. Observation of sensitive magneto-transmission oscillations to the thermal excitations in the last plateaus slowly ascending toward unity is another special feature noted in this work. The results of this study, which is carried out based on rapid standard calculations for the transfer matrix approach is supplied...

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature. (C) 2014 AIP Publishing LLC.

Optical transport behavior of organic photo-voltaic devices with nano-pillar transparent electrodes is investigated in this paper in order to understand possible enhancement of their charge-collection efficiency. Modeling and simulations of optical transport due to this architecture show an interesting regime of length-scale dependent optical characteristics. An electromagnetic wave propagation model is employed with simulation objectives toward understanding the mechanism of optical scattering and waveguide effects due to the nano-pillars and effective transmission through the active layer. Partial filling of gaps between the nano-pillars due to the nano-fabrication process is taken into consideration. Observations made in this paper will facilitate appropriate design rules for nano-pillar electrodes. (C) 2014 AIP Publishing LLC.

This paper presents a secure inductive wireless power transfer (WPT) system for electric vehicle (EV) applications, such as charging the electric devices inside EVs and performing energy exchange between EVs. The key is to employ chaos theory to encrypt the wirelessly transferred energy which can then be decrypted by specific receptors in the multi-objective system. In this paper, the principle of encrypted WPT is first revealed. Then, computer simulation is conducted to validate the feasibility of the proposed system. Moreover, by comparing the WPT systems with and without encryption, the proposed energy encryption scheme does not involve noticeable power consumption.

In this paper, we modeled a quantum dot at near proximity to a gap plasmon waveguide to study the quantum dot-plasmon interactions. Assuming that the waveguide is single mode, this paper is concerned about the dependence of spontaneous emission rate of the quantum dot on waveguide dimensions such as width and height. We compare coupling efficiency of a gap waveguide with symmetric configuration and asymmetric configuration illustrating that symmetric waveguide has a better coupling efficiency to the quantum dot. We also demonstrate that optimally placed quantum dot near a symmetric waveguide with 50 nm × 50 nm cross section can capture 80% of the spontaneous emission into a guided plasmon mode.

This paper proposes an integrated micro-chip for the manipulation and detection of magnetic particles (MPs). A conducting ring structure is used to manipulate MPs toward giant magnetoresistance (GMR) sensing elements for rapid detection. The GMR sensor is fabricated in a horseshoe shape in order to detect the majority of MPs that are trapped around the conducting structure. The GMR sensing elements are connected in a Wheatstone bridge circuit topology for optimum noise suppression. Full fabrication details of the micro-chip, characterization of the GMR sensors, and experimental results with MPs are presented in this paper. Experimental results showed that the micro-chip can detect MPs from low concentration samples after they were guided toward the GMR sensors by applying current to the conducting ring structure.

Quantum dot–plasmon waveguide systems are of interest for the active control of plasmon propagation, and consequently, the development of active nanophotonic devices such as nano-sized optical transistors. This paper is concerned with how varying aspect ratio of the waveguide cross-section affects the quantum dot–plasmon coupling. We compare a stripe waveguide with an equivalent nanowire, illustrating that both waveguides have a similar coupling strength to a nearby quantum dot for small waveguide cross-section, thereby indicating that stripe lithographic waveguides have strong potential use in quantum dot–plasmon waveguide systems. We also demonstrate that changing the aspect ratio of both stripe and wire waveguides can increase the spontaneous emission rate of the quantum dot into the plasmon mode, by up to a factor of five. The results of this paper will contribute to the optimisation of quantum dot–plasmon waveguide systems and help pave the way for the development of active nanophotonics devices.

This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies ∼ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC roll-off, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode–based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 × 10−3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

Evanescent modes in complete sonic crystals (SCs) and SC with point defects are reported both theoretically and experimentally in this paper. Plane wave expansion (PWE) and in general, ω(k)ω(k) methods have been used to calculate band structures showing gaps that have been interpreted as ranges of frequencies where no real kk exists. In this work, we extend PWE to solve the complex k(ω)k(ω) problem applied to SC, introducing the supercell approximation for studying one vacancy. Explicit matrix formulation of the equations is given. This k(ω)k(ω) method enables the calculation of complex band structures, as well as enabling an analysis of the propagating modes related with real values of the function k(ω)k(ω), and the evanescent modes related with imaginary values of k(ω)k(ω). This paper shows theoretical results and experimental evidences of the evanescent behavior of modes inside the SC band gap. Experimental data and numerical results using the finite elements method are in very good agreement with the predictions obtained using the k(ω)k(ω) method., The authors would like to thank Dr. E. A. Sanchez-Perez for his comments and suggestions and thank Daniel Fenollosa and Talleres Ferriols for their help in building the mechanical part of 3DReAMS. This work was supported by MEC (Spanish government) and the European Regional Development Fund, under Grant Nos. MAT2009-09438 and MTM2009-14483-C02-02.

In this paper, we have made a systematic study of the electronic and optical properties of InGaN based quantum dot light emitters. The valence force field model and 6×6k⋅p method have been applied to study the band structures in InGaN or InN quantum dot devices. Piezoelectric and spontaneous polarization effects are included. A comparison with InGaN quantum wells shows that InGaN quantum dots can provide better electron-hole overlap and reduce radiative lifetime. We also find that variation in dot sizes can lead to emission spectrum that can cover the whole visible light range. For high carrier density injection conditions, a self-consistent method for solving quantum dot devices is applied for better estimation of device performance. Consequences of variations in dot sizes, shapes, and composition have been studied in this paper. The results suggest that InGaN quantum dots would have superior performance in white light emitters.

Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature technology for thin-film photovoltaics, however, its potential for Semi-Transparent Photovoltaics (STPV) is yet to be explored. In this paper, we present its carrier transport physics explaining the trend seen in recently published experiments. STPV requires deposition of films of only a few hundred nanometers to make them transparent and manifests several unique properties compared to a conventional thin-film solar cell. Our analysis shows that the short-circuit current, Jsc is dominated by carriers generated in the depletion region, making it nearly independent of bulk and back-surface recombination. The bulk recombination, which limits the open-circuit voltage Voc, appears to be higher than usual attributable to numerous grain boundaries. When the absorber layer is reduced below 500 nm, grain size reduces resulting in more grain boundaries and higher resistance. This produces an inverse relationship between series resistance and absorber thickness. We also present a thickness-dependent model of shunt resistance showing its impact in these ultra-thin devices. For various scenarios of bulk and interface recombinations, shunt and series resistances, AVT and composition of CuIn$_{1-x}$Ga$_x$Se$_2$, we project the efficiency limit which - for most practical cases - is found to be $\leq$10% for AVT $\geq$25%.

GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

A dispersion relation for the combined effect of scattering and absorption of electromagnetic waves is presented for a large class of linear and passive material models. By invoking the optical theorem, the result states that the extinction cross section integrated over all frequencies is equal to the static limit of the extinction volume. The present paper focuses on an attempt to experimentally verify this sum rule by measuring the monostatic radar cross section of a fabricated sample of metamaterial. In particular, the paper utilizes the idea that, for a specific class of targets, the scattered fields in the forward and backward directions are identical. It is concluded that the theoretical findings are in good agreement with measurements performed in the frequency range [3.2,19.5] GHz.

Organic light emitting devices (OLEDs) have been the subject of intense research because of their potential for flat panel display and solid state lighting applications. While small molecule OLEDs with very high efficiencies have been demonstrated, solution processable devices are more desirable for large size flat panel display and solid state applications because they are compatible with low cost, large area roll-to-roll manufacturing process. In this review paper, we will present the recent progress made in solution processable OLEDs. The paper will be divided into three parts. In the first part of the paper, we will focus on the recent development of fluorescent polymer OLEDs based on conjugated polyfluorene copolymers. Specifically, we will present results of carrier transport and injection measurements, and discuss how the charge transport and injection properties affect the device performance. In the second part of the paper, we will focus on the recent progress on phosphorescent dye-dispersed nonconjugated polymer OLEDs. Specifically, we will present our recent results on high efficiency green and blue emitting devices based on the dye-dispersed polymer approach. Similar to fluorescent conjugated polymer OLEDs, charge transport and injection properties in dye-dispersed polymer OLEDs also play an important role in the device performance. In the third part of this paper, we will present our results on white emitting phosphorescent OLEDs. Two approaches have been used to demonstrate white emitting OLEDs. First, white emitting OLEDs were made using blue emitting OLEDs with downconversion phosphors. Second, white emitting OLEDs were made by dispersing red, green, and blue phosphorescent dyes into the light emitting layer. High efficiency devices have been demonstrated with both approaches

Gaseous detectors are widely used in high energy physics, and are attractive choices in tracking systems for cosmic muon imaging, also called muography. Such detectors offer high resolution and high efficiency at reasonable cost for large sizes, however, one of the drawbacks is that the gaseous detection medium must be prevented from contamination by outside air or internal outgassing. Standard systems work with a constant gas flow, leading to regular maintenance in the form of gas cylinder changes, which can be an issue for remote field applications. In this paper we discuss the practical possibilities to reduce gas consumption of an outdoor gaseous tracker, where particularly the gas density change from daily temperature cycling limits the input flow. Such "breathing" effect can be circumvented by well designed buffer volume, which must prevent external air contamination. A realistic MWPC tracking test system with 0.9 square meter area, total volume of 160 l, has been operated for 36 days with a flow of 3 l/day, confirming that the buffer volume, in this case a 50 m long and 10 l volume low diffusion tube, ensures sufficient gas quality. The key effects governing the gas flow dynamics, including diffusion and gas volume change, has been studied quantitatively, leading to practical design prescriptions., Comment: 20 pages, 12 figures. The following article has been submitted to Journal of Applied Physics under Manuscript #JAP21-AR-01969

This paper addresses the application of multimodal nonlinear optical (MNLO) microscopy to clinical research within the context of label-free non-invasive molecular imaging. Here, a compact MNLO microscope based on a laser scanning microscope, a femtosecond laser, a time-correlated single-photon counting system, and a photonic crystal fiber are introduced for biomedical applications. By integrating two-photon fluorescence, two-photon fluorescence lifetime imaging, second-harmonic generation, and coherent anti-Stokes Raman scattering microscopy, the proposed scheme provides profound insights into the physicochemical properties related to 3D molecular orientation distribution, inter- and intra-molecular interactions, and disease progression in biological systems and organs. The high peak power and the low average intensity of near-infrared laser pulses allow for deep-penetration imaging without compromising sample vitality. Linking nonlinear optical phenomena with time/spectral/polarization-resolved imaging also makes it possible to obtain multidimensional information to address complex biomedical questions.

When measuring I-V characteristics and carrier lifetimes in quasi-steady-state (QSS) conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn-junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low carrier density range of QSS I-V curves. Both computer modeling and experiments show that the junction capacitance is particularly significant in the case of low-resistivity silicon wafers, but it can also be noticeable in intermediate and high-resistivity samples. The paper demonstrates that the static I-V characteristics can be accurately reconstructed using a simple analytical model for the space-charge region. It thus fills a gap in the understanding of the low injection range of QSS voltage and lifetime measurements.

The use of stibnite (Sb2S3) as a light-harvesting material in thin film solar cells has received considerable research interest during the transition of the millennium. However, the use of perovskite diminished the research in the field, and the potential of antimony Chalcogenides [Sb2(S,Se)3] was not explored thoroughly. Although these materials also provide bandgap tuning like perovskite, by varying the composition of S and Se, it is not as popular as perovskite for the fabrication of solar cells mainly because of the low efficiency of the solar cells based on it. In this paper, we present a landscape of the functional role of various device parameters on the performance of Sb2(S,Se)3-based solar cells. For this purpose, we first calibrate the optoelectronic model used for simulation with the experimental results from the literature. The model is then subjected to parametric variations to explore the performance metrics for this class of solar cells. Our results show that despite the belief that the open circuit voltage is independent of contact layers’ doping in proper band-aligned carrier selective thin film solar cells, here we observe otherwise and the open circuit voltage is indeed dependent on the doping density of the contact layers. Using the detailed numerical simulation and analytical model, we further identify the performance optimization route for Sb2(S,Se)3-based thin film solar cells.

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

We have developed a new ultra-low field frequency-swept (FS) electrically detected magnetic resonance (EDMR) spectrometer to perform sensitive EDMR measurements of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors at sub-millitesla (mT) magnetic fields. The new spectrometer design enables the detection of so-called ultra-strong coupling effects such as multiple-photon transitions and Bloch–Siegert shifts. In this paper, we present a new spectrometer design and discuss ultra-low field FS-EDMR sensitivity to both multiphoton transitions and Bloch–Siegert shifts of the FS-EDMR response. FS-EDMR effectively eliminates the interference of the sub-mT EDMR response from a near-zero field magnetoresistance (NZFMR) phenomenon that pervades the sub-mT regime in a magnetic field-swept EDMR scheme. We discuss an automatic power leveling scheme, which enables frequency sweeping. We also present results illustrating the Bloch–Siegert shift of the FS-EDMR response. Finally, we study the two-photon transition line shape in the 4H-SiC transistor as a function of the static field, in which we observe a collapse of the two-photon linewidth with decreasing static field and compare our results to the theory of two-photon absorption in EDMR.

In this paper, we discuss a number of problems found in the literature related to experimental measurements of rf discharge electrical and plasma parameters with different electromagnetic probes. Incorrect evaluations of discharge power and the inaccurate measurement of basic plasma parameters with electrical (Langmuir), magnetic (B-dot), and microwave probes are among the troubling issues found in many recent publications on rf plasma. The purpose of this review is to show the origination of errors and ways to their mitigation based on the three-decade development of contemporary rf discharge diagnostics.

The availability of pulsed x rays on short timescales has opened up new avenues of research in the physics and chemistry of shocked materials. The continued installation of shock platforms such as gas guns and high power lasers placed at beamline x-ray facilities has advanced our knowledge of materials shocked to extreme conditions of pressure and temperature. In addition, theoretical advancements have made direct correspondence with high-pressure x-ray experiments more viable, increasing the predictive capability of these models. In this paper, we discuss both recent experimental results and the theory and modeling that has been developed to treat these complex situations. Finally, we discuss the impact that new platforms and increased beam time may have on the future direction of this field.

Research into the use of nonlinear ultrasonic guided waves for nondestructive evaluation is expanding at a high rate because of the great potential benefit that they possess for early detection of material degradation. However, development of inspection and testing strategies is complicated because (i) the underlying physical principles are complex, (ii) there is a broad spectrum of possible solutions but only a limited number that have been shown to be effective, and (iii) the nonlinearity is weak and thus its measurement is challenging. This Tutorial aims to provide a foundation for researchers and technology-transitioners alike, to advance the application of nonlinear ultrasonic guided waves and ultimately transform how the service lives of structural systems are managed. The Tutorial focuses on the physical principles of nonlinear ultrasonic guided waves leading to the so-called internal resonance conditions that provide a means for selecting primary waves that generate cumulative secondary waves. To detect material degradation, we are primarily interested in nonlinearity stemming from the material itself, which is represented as hyperelastic. For the special case of plates, internal resonance points have been identified and case studies are presented to illustrate some of the applications. The Tutorial has one new result not published in a research paper; finite element simulation of energy transfer from shear-horizontal primary waves to symmetric Lamb waves at the second harmonic.

We review the history of photoacoustic, thermal lensing, and photothermal deflection techniques from early experiments to the current time. The paper also describes the main fields of application in chronological order, showing the primary advantages and listing initial technological developments.

Organic light-emitting diodes (OLEDs) have successfully entered the display market and continue to be attractive for many other applications. As state-of-the-art OLEDs can reach an internal quantum efficiency (IQE) of almost 100 %, light outcoupling remains one of the major screws left to be turned. The fact that no superior outcoupling structure has been found underlines that further investigations are needed to understand their prospect. In this paper, we use two-dimensional titanium dioxide (2D TiO$_2$) block arrays as a model of an internal light outcoupling structure and investigate the influence of its geometrical parameters on achieving the highest external quantum efficiency (EQE) for OLEDs. The multivariable problem is evaluated with the visual assistance of scatter plots, which enables us to propose an optimal period range and block width-to-distance ratio. The highest EQE achieved is 45.2 % with internal and external structures. This work contributes to the highly desired prediction of ideal light outcoupling structures in the future., Comment: 14 pages, 8 Postscript figures

A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors; however coherent understanding of physical and chemical origins of their electrical properties needs to be further pursued to improve and customize the performance. In this paper, phase-field methodology is used to study the formation and annihilation of conductive channels resulting in reversible resistive switching behaviors that can generally occur in any dielectric thin films. Our focus is on the dynamical evolution of domains made of electrical charges under the influence of spatially varying electric field and temperature resulting in distinctive changes in electrical conductance., Comment: 6 pages, 5 figures

In this paper, we investigate two deep learning approaches to recovering initial temperature profiles from thermographic images in non-destructive material testing. First, we trained a deep neural network (DNN) in an end-to-end fashion by directly feeding the surface temperature measurements to the DNN. Second, we turned the surface temperature measurements into virtual waves (a recently developed concept in thermography), which we then fed to the DNN. To demonstrate the effectiveness of these methods, we implemented a data generator and created a dataset comprising a total of 100 000 simulated temperature measurement images. With the objective of determining a suitable baseline, we investigated several state-of-the-art model-based reconstruction methods, including Abel transformation, curvelet denoising, and time- and frequency-domain synthetic aperture focusing techniques. Additionally, a physical phantom was created to support evaluation on completely unseen real-world data. The results of several experiments suggest that both the end-to-end and the hybrid approach outperformed the baseline in terms of reconstruction accuracy. The end-to-end approach required the least amount of domain knowledge and was the most computationally efficient one. The hybrid approach required extensive domain knowledge and was more computationally expensive than the end-to-end approach. However, the virtual waves served as meaningful features that convert the complex task of the end-to-end reconstruction into a less demanding undertaking. This in turn yielded better reconstructions with the same number of training samples compared to the end-to-end approach. Additionally, it allowed more compact network architectures and use of prior knowledge, such as sparsity and non-negativity. The proposed method is suitable for non-destructive testing (NDT) in 2D where the amplitudes along the objects are considered to be constant (e.g., for metallic wires). To encourage the development of other deep-learning-based reconstruction techniques, we release both the synthetic and the real-world datasets along with the implementation of the deep learning methods to the research community.

Organic electronic applications are envisioned to address broad markets, which includes flexible displays, electronic papers, sensors, disposable and wearable electronics, and medical and biophysical applications, leading to a tremendous amount of interest from both academia and industry in the study of devices. These fields of science and technology constitute interdisciplinary fields that cover physics, chemistry, biology, and materials science, leading, as a wanted output, to the elucidation of physical and chemical properties, as well as structures, fabrication, and performance evaluation of devices and the creation of new knowledge underlying the operation of organic devices using new synthesized organic materials—organic semiconductors. We testify the situation when the available organic electronic applications sometimes lack a theoretical background. The cause may be the complicated properties of disordered, weak bounded, molecular materials with properties different from their inorganic counterparts. One of the basic information-rich resources is the electronic structure of organic semiconductors, elucidated by the methods, hardly possible to be transferred from the branch of inorganic semiconductors. Electrochemical spectroscopic methods, in general, and electrochemical impedance spectroscopy, in particular, tend and seem to fill this gap. In this Perspective article, the energy resolved-electrochemical impedance spectroscopic method for electronic structure studies of surface and bulk of organic semiconductors is presented, and its theoretical and implementation background is highlighted. To show the method’s properties and strength, both as to the wide energy and excessive dynamic range, the basic measurements on polymeric materials and D–A blends are introduced, and to highlight its broad applicability, the results on polysilanes degradability, gap engineering of non-fullerene D–A blends, and electron structure spectroscopy of an inorganic nanocrystalline film are highlighted. In the outlook and perspective, the electrolyte/polymer interface will be studied in general and specifically devoted to the morphological, transport, and recombination properties of organic semiconductors and biophysical materials.

Nb₃Sn thin films are promising candidates for future application in superconducting radio frequency cavities due to their low surface resistivity, high critical temperature, and critical field, as compared to bulk niobium, which is the current state of the art. In this paper, we report the deposition of Nb₃Sn thin films by magnetron co-sputtering at the extremely low temperature of 435°C. These thin films show a critical temperature of 16.3 K, a high critical current density of 1.60×10⁵A/cm², and a strong shielding effect. The key to achieving low-temperature growth is the independent kinetic control of Nb and Sn species in the sputtering process. From a technological viewpoint, the low-temperature approach paves the way for the use of Nb₃Sn as a coating in cryogenic efficient copper based cavities, thereby avoiding the detrimental interdiffusion of Cu.

The ultrahigh carrier mobility and matchable work function of graphene have positioned this material as a leading candidate for the ideal contact material for carbon nanotubes (CNTs). Highly efficient carrier transport through CNT–graphene junctions is facilitated by covalently bonded contacts. This paper, therefore, proposes covalently bonded CNT–graphene junctions and investigates their characteristics theoretically. In these junctions, partially unzipped CNTs are longitudinally or radially bonded with graphene. By exploiting nonequilibrium Green's functions with density-functional theory, we examine ballistic electron transport (∼1.38 × 105 cm2/V s) and edge-dependent transport. Moreover, the contact properties of the junctions with adsorbed Cu atoms are investigated. Electron transfer from Cu to the junction turns the p-type Schottky contact into an n-type contact and decreases the Schottky barrier height from 0.2 to 0.08 eV. Furthermore, the junction resistance decreases by one to three orders of magnitude. The proposed design of Cu-decorated CNT–graphene junctions and first-principles calculations suggest an approach for low-power, high-performance CNT-based electronics.

Predicting the insulating thermal behavior of a multi-component refractory ceramic system could be a difficult task, which can be tackled using the finite element (FE) method to solve the partial differential equations of the heat transfer problem, thus calculating the temperature profiles throughout the system in any given period. Nevertheless, using FE can still be very time-consuming when analyzing the thermal performance of insulating systems in some scenarios. This paper proposes a framework based on a machine learning surrogate model to significantly reduce the required computation time for estimating the thermal performance of several multi-component insulating systems. Based on an electric resistance furnace case study, the framework estimated the feasibility and the final temperature of nearly 1.9 × 10 5 insulating candidates’ arrangements with reasonable accuracy by simulating only an initial sample of 2.8 % of them via FE. The framework accuracy was evaluated by varying the initial sample size from ≈ 0.9 % to 8 % of total combinations, indicating that 3 %– 5 % is the optimal range in the case study. Finally, the proposed framework was compared to the evolutionary screening procedure, a previously proposed method for selecting insulating materials for furnace linings, from which it was concluded that the machine learning framework provides better control over the number of required FE simulations, provides faster optimization of its hyperparameters, and enables the designers to estimate the thermal performance of the entire search space with small errors on temperature prediction.

Up until recently, thin film growth by magnetron sputtering relied on enhancing adatom mobility in the surface region by gas-ion irradiation to obtain dense layers at low deposition temperatures. However, an inherently low degree of ionization in the sputtered material flux during direct-current magnetron sputtering (DCMS), owing to relatively low plasma densities involved, prevented systematic exploration of the effects of metal-ion irradiation on the film nanostructure, phase content, and physical properties. Employing only gas-ion bombardment results in an inefficient energy and momentum transfer to the growing film surface. Also, for enhanced substrate biasing, the higher concentration of implanted noble gas atoms at interstitial lattice positions causes elevated compressive stress levels. High-power impulse magnetron sputtering (HiPIMS), however, provides controllable metal-ion ionization and, more importantly, enables the minimization of adverse gas-ion irradiation effects. The latter can be realized by the use of pulsed substrate bias applied synchronously with the metal-ion-rich portion of each HiPIMS pulse (metal-ion-synchronized HiPIMS), based on the results of time-resolved ion mass spectrometry analyses performed at the substrate position. In this way, both the metal-ion energy and the momentum can be precisely controlled for one to exploit the benefits of irradiation by metal-ions, which are also the film-forming species. Systematic studies performed in recent years using binary and ternary transition metal-based nitrides as model systems revealed new phenomena with accompanying unique and attractive film growth pathways. This Perspective paper focuses on the effects of low-mass metal-ion irradiation and their role for the nanostructure and phase control. We review basic findings and present original results from ion mass spectrometry studies and materials characterization for the effect of metal-ion subplantation. Key correlations are highlighted, which, if properly engaged, enable unprecedented control over film nanostructure and phase formation and, hence, the resulting properties. We show generalization from the findings to present a new concept for thin film growth in a hybrid HiPIMS/DCMS configuration with metal-ion-synchronized bias. Based on the results obtained for TM-based nitrides, there are no evident physical limitations preventing the extension of this deposition process concept for other materials systems or other metal–ion-based thin film growth techniques. Further exciting findings could, thus, be anticipated for the future.

Selective engineering of the interface between nanoscale components and the electrical properties of heterojunctions is key to the development of next-generation nanoscale circuit elements. In this paper, we show how laser processing of a metal-P type semiconductor nanoscale heterojunction between Ag and CuO nanowires can be used to control the nature of the electrical contact by reducing the Schottky barrier at the Ag–CuO interface to Ohmic contact. Elimination of the Schottky barriers occurs in response to lattice matching of Ag(111)∥CuO(111) planes at the interface induced by controlled irradiation with femtosecond (fs) laser pulses. An interdiffusion region with a mixed Ag/CuO composition is also present over a localized area of the interface between the Ag and CuO nanowires after fs laser processing, but both Ag and CuO nanowires remain crystalline away from the heterojunction. In addition, the Ag nanowire becomes totally embedded in the larger CuO nanowire after irradiation. Fabricated nanowire devices from Ag–CuO nanowire heterojunctions transition from a double-Schottky contact configuration prior to laser processing to a rectifying behavior as irradiation time increases. This study illustrates that fs laser processing can be highly effective in the engineering of electrical performance in metal–semiconductor nanoscale heterojunction devices.

In this paper, we present a large signal and switching analysis for the Heterojunction Bipolar Transistor Laser (TL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for carrier transport, nonlinear optical gain and optical confinement factor (OCF), we have simulated the large signal response of the HBTL in relatively low and high modulation frequencies. Our results predict that for multiple quantum well structures at low frequencies there should not be a difference in carrier density either the photon density. However, carrier concentration can be differently distributed between subsequent wells in case of a high speed yet large signal input. This leads to increased linewidth instead as it depends on {\Delta}Nqw. We show the effect of different structural parameters on the switching behavior by performing a switching analysis of the Single Quantum Well (SQW) and Multiple Quantum Well (MQW) structures using computationally efficient numerical methods. A set of coupled rate equations is solved to investigate the large-signal and switching behavior of MQW-HBTL. Finally, to have a comprehensive judgment about this optoelectronic device, we introduce a relative performance factor to taking into account all the optoelectronic characteristics such as output power, ac current gain, modulation bandwidth, and base threshold current as well as turn-on time in order to design a suitable TL for Opto-Electronic Integrated Circuits (OEICs).

One-dimensional piezoelectric semiconductor (PSC) nanowires have been widely used in smart structures and devices; however, few theoretical studies on their nano-size effects have been carried out. In this paper, a theoretical analysis of one-dimensional n-type PSC nanowires under an axial force was carried out, with consideration of the flexoelectric and strain gradient effects. Exact solutions were obtained based on the differential operator theory. The flexoelectric and strain gradient effects on the internal electromechanical field and carrier concentration have been discussed. It can be shown that the flexoelectric effect weakens the piezoelectricity of a PSC nanowire while the strain gradient has the opposite effect, with an amplitude enhancement that is dependent on the flexoelectric and inner scale coefficients.

Scanning thermal microscopy (SThM) is the only method for thermal measurements providing spatial resolution in the nanometer range. The method combines the topographical imaging of atomic force microscopy (AFM) with the thermal characterization of samples by the use of specially designed AFM probes having a temperature sensor near the apex. Measurements can be carried out in two modes: the temperature contrast (or passive) mode and the conductance contrast (or active) mode. In the first mode, the probe is not heated and the temperature distribution on the sample surface is measured. In the second mode, there are no heat sources in the sample and the probe is heated. The probe temperature depends on the thermal conductance for the heat exchange between the probe and the sample. This thermal conductance depends on the sample thermal conductivity and probe-sample interfacial thermal resistance. If the latter is constant, the distribution of the thermal conductivity on the sample surface can be obtained. The principle of qualitative SThM is quite simple. However, quantitative measurements require rigorous analysis of temperature distribution and heat fluxes in the probe-sample system. This paper provides basic information about SThM starting from first principles, through instrumentation, characterization of probes used for measurements, general theory of the temperature, and the thermal conductivity measurements, to a few examples of practical applications of this method. Finally, perspectives and challenges for SThM based measurements are discussed.

In this paper, the physical mechanisms involved in electron-beam-induced current (EBIC) imaging of semiconductor pn-junctions are reviewed to propose a model and optimize the acquisition of experimental data. Insights are drawn on the dependence of the EBIC signal with electron accelerating voltage and surface conditions. It is concluded that improvements in the resolution of EBIC are possible when the surface conditions of the specimens are carefully considered and optimized. A lower accelerating voltage and an increase of the surface recombination velocities are quantitatively shown to maximize the EBIC lateral resolution in locating the pn-junction. The effect of surface band bending is included in the model, and it is seen to primarily affect the surface recombination. Introducing controlled surface damage is shown as a potential method for resolution enhancement via focused ion beam milling with Ga+ ions. These findings contribute to the understanding of this technique and can produce further improvements to its application in semiconductor device technology.

Efficient pumping of whole blood is an essential task in biomedical engineering, especially for point-of-care diagnostics using lab-on-a-chip devices. Alternating current (AC) electrokinetics have been widely used for several different applications among which pumping fluids using the precisely controlled electric field without any moving mechanical parts is significant. Due to its high conductive characteristic, it is difficult to drive the blood flow using the AC electroosmosis phenomenon because the electric double layer is highly compressed. Fortunately, the AC electrothermal (ACET) phenomenon occurs due to the variation of temperature-dependent permittivity and conductivity caused by Joule heating effects or other heat sources making it powerful for driving high electrical conductivity physiological fluids in biomedical devices. Compared with Newtonian fluids like saline solutions or urine, the non-Newtonian rheological nature and AC frequency-dependent dielectric property of blood make its ACET driving mechanism more complicated and attractive. In this paper, ACET induced blood flow in the 3D microfluidic channel is modeled by the lattice Boltzmann method accelerated using graphics processor units. The Carreau-Yasuda model is applied to simulate the shear-thinning behavior of blood flow, and its electrothermal pumping efficiency is investigated with respect to the AC electrode configuration, AC voltage magnitude, and AC signal frequency by comparing it with the ACET pumping of Newtonian fluids using scaling law analysis. The results demonstrate that the ACET phenomenon is effective for pumping non-Newtonian whole blood flow in microfluidic devices with ring electrodes which will contribute to the point-of-care diagnostic of bacterial bloodstream infections or rapid detection of circulating tumor cells.

In the present paper, a theoretical and experimental study of a highly absorptive, weakly reflective coating designed and fabricated on the basis of 3D THz resonant elements is reported. Transmission and reflection of electromagnetic waves from the metamaterial-substrate structure involving a highly absorptive, weakly reflective array of artificial bi-anisotropic elements were analyzed. The samples contained paired right-handed and left-handed helices, due to the fact that the chirality was compensated. The parameters of helices were optimized to achieve roughly identical values of dielectric permittivity and magnetic permeability. As a result, the metamaterial exhibited weak reflectivity in the vicinity of resonance frequency. On the other hand, effective resonance properties of the helices were tuned to ensure substantial absorption of THz radiation. Analytical expressions for the coefficients of radiation reflection and transmission in the samples were derived by solving a boundary-value problem for the propagation of electromagnetic waves in the metamaterial-substrate system. Simulated properties of fabricated structures were compared with experimental data.

In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both hole and electron charges for ambipolar transport characteristics. The model comprehends the in-plane band-structure anisotropy in BP, as well as the asymmetry in electron and hole current conduction characteristics. The model also includes the effect of Schottky-type source/drain contact resistances, which are voltage-dependent and can significantly limit current conduction in the on-state in BP FETs. Model parameters are extracted using measured data of back-gated BP transistors with gate lengths of 1000 nm and 300 nm with BP thickness of 7.3 nm and 8.1 nm, and for the temperature range of 180 K to 298 K. Compared to previous BP models that are validated only for room-temperature and near-equilibrium bias conditions (low drain-source voltage), we demonstrate excellent agreement between the data and model over a broad range of bias and temperature values. The model is also validated against numerical TCAD data of top-gated BP transistors with a channel length of 300 nm. The model is implemented in Verilog-A and the capability of the model to handle both dc and transient circuit simulations is demonstrated using SPECTRE. The model not only provides a physical insight into technology-device interaction in BP transistors, but can also be used to design and optimize BP-based circuits using a standard hierarchical circuit simulator.

In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.

Strain engineering is the art of inducing controlled lattice distortions in a material to modify specific physicochemical properties. Strain engineering is applied not only for basic fundamental studies of physics and chemistry of solids but also for device fabrication through the development of materials with new functionalities. Thin films are one of the most important tools for strain engineering. Thin films can in fact develop large strain due to the crystalline constraints at the interface with the substrate and/or as a result of specific morphological features that can be selected by an appropriate tuning of the deposition parameters. Within this context, the in situ measurement of the substrate curvature is a powerful diagnostic tool allowing real time monitoring of the stress state of the growing film. This paper reviews a few recent applications of this technique and presents new measurements that point out the great potentials of the substrate curvature measurement in strain engineering. Our study also shows how, due to the high sensitivity of the technique, the correct interpretation of the results can be in certain cases not trivial and require complementary characterizations and an accurate knowledge of the physicochemical properties of the materials under investigation.