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Start Over Topic business Topic ballistic conduction Journal journal of applied physics Publisher american institute of physics (aip)
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1. Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors

Author

Hideaki Tsuchiya, Wei Wang, and Matsuto Ogawa

Subjects
Materials science, Silicon, business.industry, Monte Carlo method, General Physics and Astronomy, Schottky diode, chemistry.chemical_element, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Materials Science, chemistry, Ballistic conduction, MOSFET, Optoelectronics, Field-effect transistor, business, Communication channel
Abstract

In this paper, we study the influences of a channel source-end potential profile on the ballistic transport of carriers in Si metal oxide semiconductor field effect transistors (MOSFETs) based on a quantum-corrected Monte Carlo device simulation. As a result, we found that higher ballistic efficiency is expected in MOSFETs with a heterojunction bottleneck barrier, such as Schottky source/drain MOSFETs, compared to that with the conventional p-n junction source and drain. Such a superior ballistic behavior is demonstrated due to the narrower bottleneck potential profile formed at the source-channel interface.

Published
2009