Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors

In this paper, we study the influences of a channel source-end potential profile on the ballistic transport of carriers in Si metal oxide semiconductor field effect transistors (MOSFETs) based on a quantum-corrected Monte Carlo device simulation. As a result, we found that higher ballistic efficiency is expected in MOSFETs with a heterojunction bottleneck barrier, such as Schottky source/drain MOSFETs, compared to that with the conventional p-n junction source and drain. Such a superior ballistic behavior is demonstrated due to the narrower bottleneck potential profile formed at the source-channel interface.