Search

Energy-dispersive x-ray spectroscopy and high-angle annular dark-field in a Cs-corrected scanning transmission electron microscope are employed to characterize the atomic-scale strain distribution in the active region of the InAs-based interband cascade laser. For the first time, energy-dispersive x-ray spectroscopy is utilized for the quantitative calculation of the zero-strain region, by which the geometric phase analysis of high-angle annular dark-field imaging has been carried out. The strain distribution of the active region with high accuracy has been obtained. The analysis of the out-of-plane strain shows that the active region in the InAs-based interband cascade laser is strain-compensated, while a certain degree of elemental intermixing still exists in the active region. This detailed strain distribution can provide valuable insights into the optimization of the growth conditions for the active region such as growth temperature, V/III flux ratio, and growth process to minimize the elemental intermixing and obtain a better performance interface while maintaining the strain-compensated state. [ABSTRACT FROM AUTHOR]

Over the last two decades, Electron Energy Loss Spectroscopy (EELS) imaging with a scanning transmission electron microscope has emerged as a technique of choice for visualizing complex chemical, electronic, plasmonic, and phononic phenomena in complex materials and structures. The availability of the EELS data necessitates the development of methods to analyze multidimensional data sets with complex spatial and energy structures. Traditionally, the analysis of these data sets has been based on analysis of individual spectra, one at a time, whereas the spatial structure and correlations between individual spatial pixels containing the relevant information of the physics of underpinning processes have generally been ignored and analyzed only via the visualization as 2D maps. Here, we develop a machine learning-based approach and workflows for the analysis of spatial structures in 3D EELS data sets using a combination of dimensionality reduction and multichannel rotationally invariant variational autoencoders. This approach is illustrated for the analysis of both the plasmonic phenomena in a system of nanowires and in the core excitations in functional oxides using low loss and core-loss EELS, respectively. The code developed in this manuscript is open sourced and freely available and provided as a Jupyter notebook for the interested reader. [ABSTRACT FROM AUTHOR]

Low-energy ion beam irradiation, combined with the introduction of impurities, presents a promising approach for nanopatterning silicon (Si) surfaces. In this research, we investigate the surface evolution of Si (100) surfaces irradiated by 75 eV helium (He) plasma, in the presence of tantalum (Ta), traditionally regarded as an impurity incapable of initiating pattern formation, as evidenced in prior studies. The Ta impurities are pre-deposited onto the Si surfaces using the magnetron sputtering method, which offers a more controlled and quantifiable approach compared with the conventional co-deposition route. After irradiation at 800 K, dense cone arrays are produced on the Si surface. The growth of the cones is explored for fluence spanning (1–10) × 1025 m−2. The cross-sectional scanning electron microscope images indicate that the cone lengths and base width are well characterized by t1/2 dependence. The kinetics of the cone growth follow Fick's law, characterized by an effective diffusive mechanism with the coefficients of diffusion: D = 6.49 ± 0.83 × 10−16 m−2 s−1. Transmission electron microscope observations reveal that the cone has distinct inner and outer parts with different microstructures and a clear interface. The growth mechanism of these cones is elucidated as a composite process involving preferential sputtering, the destabilizing influence of He bubbles, and the migration of adatoms. [ABSTRACT FROM AUTHOR]

The scanning electron microscope (SEM) recordings of dynamic nano-electromechanical systems (NEMS) are difficult to analyze due to the noise caused by low frame rate, insufficient resolution, and blurriness induced by applied electric potentials. Here, we develop an image processing platform enhanced by the physics of the underlying system to track the motion of buckling NEMS structures in the presence of high noise levels. The algorithm is composed of an image filter, two data filters, and a nonlinear regression model, which utilizes the expected form of the physical solution. The method was applied to the recordings of a NEMS beam about 150 nm wide, undergoing intra- and inter-well post-buckling states with a transition rate of approximately 0.5 Hz. The algorithm can track the dynamical motion of the NEMS and capture the dependency of deflection amplitude on the compressive force on the beam. With the help of the proposed algorithm, the transition from inter-well to intra-well motion is clearly resolved for buckling NEMS imaged under SEM. [ABSTRACT FROM AUTHOR]

A non-destructive method for detecting sub-micrometer-sized micropipes on an entire wafer surface is investigated. Since it is difficult to detect sub-micrometer-sized micropipes due to their small core size, a non-destructively and accurately detecting method is required. To solve the issue, we focus on a characteristic depression generated around micropipes, namely, line-shaped depressions. In this paper, the location of line-shaped depressions is identified by using optical inspection, and the line-shaped depressions are distinguished whether micropipes exhibit line-shaped depression or not by using mirror electron microscope observation as high-resolution inspection. The accuracy of the distinction results is confirmed by scanning electron microscope observation, and electrical characteristics of the P–N diode are fabricated using the inspected wafer. Furthermore, the sub-micrometer-sized micropipes are observed at the sites of leakage current identified by emission microscopy. Additionally, device simulation of the blocking-voltage characteristics of P–N diodes suggests that the increase in leakage current depends on the electric field at the sub-micrometer-sized micropipes, regardless of their core size. [ABSTRACT FROM AUTHOR]

In recent years, precision and accuracy for a more precise critical dimension (CD) control have been required in CD measurement technology. CD distortion between the measurement by a critical dimension scanning electron microscope (CD-SEM) and a reference tool is the most important factor for a more accurate CD measurement. CD bias varies by a CD-SEM and a pattern condition. Therefore, it is urgently needed to identify, characterize, and quantify those parameters that may or may not affect the CD measurement by a CD-SEM. The sensitivity of the Monte Carlo simulated CD-SEM images with multiple physical modeling components has been studied previously. In this study, we demonstrate that the work function and elastic scattering potential models have a significant impact on secondary electron emission intensity, but their influence on the shape of the linescan profile is small, and other factors like the optical energy loss function and dielectric function models have even smaller effects. We have evaluated the uncertainty in the linescan profiles of Si line structures with different sidewall angles due to several different physical factors. It is found that when the CD is evaluated by a peak/valley method, the uncertainty of the CD is negligible. Therefore, it is concluded that the CD value and its related uncertainty are not critically related to the physical factors of the present Monte Carlo simulation model but rely dominantly on the line structure and electron beam parameters. [ABSTRACT FROM AUTHOR]

We report on the metrological characterization of the emission from a germanium-vacancy center in diamond under a microfabricated solid immersion lens in a confocal laser-scanning microscope setup. Ge ions were implanted into a synthetic diamond at 3 MeV, and germanium-vacancy centers were then formed by subsequent annealing. Afterward, solid immersion lenses were fabricated in a focused ion beam scanning electron microscope. The photoluminescence was investigated at room temperature in terms of the spectral distribution, the excited state lifetime, the second-order correlation function, and the saturation behavior, proving simultaneous high single-photon purity and high brightness. Two methods were exploited to minimize the residual multi-photon probability: spectral filtering and temporal filtering. According to these results, we assume that Raman scattered photons and emission from neighboring color centers play an important role in the residual multi-photon emission probability. The system efficiency of the single-photon source was investigated and found to be in accordance with the value calculated from all sources of loss in the setup. The branching ratio of the germanium-vacancy center for the decay into the ground state and into metastable state was calculated. The results enable the usage of the single-photon source in future quantum radiometric experiments. [ABSTRACT FROM AUTHOR]

Because of their full compatibility with CMOS technology, HfO2-based ferroelectrics, and especially Hf0.5Zr0.5O2 (HZO), attract a lot of attention. However, the overwhelming majority of measurement techniques provides only information about the cumulative electrical response of many domains of HZO, i.e., at the macroscopic level. So far, only piezoresponse force microscopy technique was applied to visualize distinct ferroelectric domains in HZO and to analyze the local switching behavior in the microscopic level. This work introduces the possibility of using electron beam-induced current (EBIC) technique in the scanning electron microscope to visualize the gradual polarization reversal of HZO and to obtain the local polarization dynamics. We show that although the local EBIC signal is affected by surrounding domains, studying the variations in the ferroelectric response of individual domains as well as the spread of the local stiffness and local imprint is possible by this method. Besides, we show the connection between the EBIC current and an electric field across passive non-ferroelectric layers at interfaces between HZO and metal electrodes, which opens up additional opportunities to use the EBIC technique for investigations of interface-dependent properties of HZO ferroelectrics in the future. [ABSTRACT FROM AUTHOR]

Because of their full compatibility with CMOS technology, HfO2-based ferroelectrics, and especially Hf0.5Zr0.5O2 (HZO), attract a lot of attention. However, the overwhelming majority of measurement techniques provides only information about the cumulative electrical response of many domains of HZO, i.e., at the macroscopic level. So far, only piezoresponse force microscopy technique was applied to visualize distinct ferroelectric domains in HZO and to analyze the local switching behavior in the microscopic level. This work introduces the possibility of using electron beam-induced current (EBIC) technique in the scanning electron microscope to visualize the gradual polarization reversal of HZO and to obtain the local polarization dynamics. We show that although the local EBIC signal is affected by surrounding domains, studying the variations in the ferroelectric response of individual domains as well as the spread of the local stiffness and local imprint is possible by this method. Besides, we show the connection between the EBIC current and an electric field across passive non-ferroelectric layers at interfaces between HZO and metal electrodes, which opens up additional opportunities to use the EBIC technique for investigations of interface-dependent properties of HZO ferroelectrics in the future. [ABSTRACT FROM AUTHOR]

Focussed ion beam - scanning electron microscope (FIB-SEM) 3D examination was conducted on three standard UO2 and one Cr doped UO2 high burn-up pressurized water reactor (PWR) fuel samples. This work complemented other microanalysis examination, including an electron backscattered diffraction (EBSD) work on the polished surface. A parallel article giving the EBSD results was submitted simultaneously. Together, they found, in all the central area of these high burn-up samples: (i) a restructuring of the initial grains into smaller sub-grains forming low angle boundaries and with crystal orientations around that of their parent grains; and (ii) intragranular bubbles mostly situated on these low angle boundaries. The FIB-SEM 3D examination showed how such inter-sub-grain bubbles start as small compact but also small lenticular bubbles, similar to typical small intergranular lenticular bubbles. With increasing burn-up, these lenticular bubbles get thicker and locally interlink to form more complex bubbles. However, no long distance networks, between the sub-grains or between the original grains, were found. Such networks could have been a path for part of the fission gases to reach the grain boundaries, the grain edges (the intersection line of three grain boundaries), and the rod free volumes. These FIB-SEM 3D examinations brought details on the intragranular and intergranular bubbles situation for each studied volume. The distribution of the intragranular bubbles according to their sizes and shapes was exposed. The central restructuring, studied in this work, is likely to play a role in the increase of the fission gas release fractions at high burn-up. This work is an incentive to study further this restructuring and the bubbles formed, combining different approaches. [ABSTRACT FROM AUTHOR]

Materials research studies are dealing with a large number of images, which can now be facilitated via image-based machine learning techniques. In this article, we review recent progress of machine learning-driven image recognition and analysis for the materials and chemical domains. First, the image-based machine learning that facilitates the property prediction of chemicals or materials is discussed. Second, the analysis of nanoscale images including those from a scanning electron microscope and a transmission electron microscope is discussed, which is followed by the discussion about the identification of molecular structures via image recognition. Subsequently, the image-based machine learning works to identify and classify various practical materials such as metal, ceramics, and polymers are provided, and the image recognition for a range of real-scenario device applications such as solar cells is provided in detail. Finally, suggestions and future outlook for image-based machine learning for classification and prediction tasks in the materials and chemical science are presented. This article highlights the importance of the integration of the image-based machine learning method into materials and chemical science and calls for a large-scale deployment of image-based machine learning methods for prediction and classification of images in materials and chemical science. [ABSTRACT FROM AUTHOR]

Accurate simulations of the shock response of heterogeneous energetic (HE) materials require closure models, which account for energy localization in the micro-structure. In a multi-scale framework, closure is provided by reaction rate models that account for ignition and growth of hotspots, allowing for prediction of the overall macro-scale sensitivity of a HE material. In the present meso-informed ignition and growth (MES-IG) model, the reaction rate is expressed as a function of shock pressure and morphology of the void field in a pressed energetic material. In MES-IG, the void morphology is quantified in terms of a limited number of parameters: viz., overall porosity, void size, and shape (aspect ratio and orientation). In this paper, we quantify the effects of arbitrary variations in void shapes on meso-scale energy deposition rates. A collection of voids of arbitrary shapes is extracted from scanning electron microscope (SEM) images of real, pressed HMX (octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine) samples and classified into groups based on their similarity in shapes. Direct numerical simulations (DNS) are performed on the highly contorted "real" void shapes, and the calculated hotspot ignition and growth rates are compared with values predicted by the MES-IG. It is found that while the parameterization of complex void morphologies in terms of orientation and aspect ratio gives fairly good agreement between DNS and MES-IG reaction rates, the intricate details of highly complex void shapes impact hotspot characteristics to a significant extent. This work suggests possible improvements for the prediction of reaction rate in the energetic microstructure by adopting a more detailed description of shapes. [ABSTRACT FROM AUTHOR]

Piezoresistance, the change of electrical resistance due to applied mechanical strain, has been characterized for films in tension or bending. However, measuring the compressive piezoresistance of films remains a challenge because the in-plane compression often results in macroscopic buckling and kinking, leading to localization of strain. Here, we overcame this issue via a newly developed method to calculate the compressive piezoresistance of films by measuring the change of resistance in situ under tensile and bending stresses. A linear fit was applied to the experimental tensile piezoresistive response and a quadratic fit was applied to the bending piezoresistive response. The experimental bending response was mathematically decomposed into its tensile and compressive components. The compressive response was then isolated by subtracting the tensile response from the bending response. In this study, the method is applied to reduced graphene oxide (rGO) film specimens. For rGO films, the compressive piezoresistance was found to be much greater than the tensile piezoresistance. Scanning electron microscope images revealed that extensive damage occurred on the compressive side of the bending specimen, resulting in a large increase in resistivity. We anticipate that our study will be adapted to applications that require mechanically reliable, flexible, and highly conductive materials, such as flexible electronics and structural energy and power. [ABSTRACT FROM AUTHOR]

We have demonstrated that intense 7-fs, ∼810-nm laser pulses can produce a much finer periodic nanostructure on a diamond-like carbon film through ablation in air than that formed with intense 100-fs, ∼800-nm laser pulses. The minimum period size is ∼60 nm, corresponding to ∼1/13 of the center wavelength. To understand the physical mechanism responsible for the finer nanostructuring, we have observed a bonding structural change in the nanostructure with micro-Raman spectroscopy and a scanning transmission electron microscope. It has been found that the modified layer thickness with the 7-fs pulses is much thinner than that with the 100-fs pulses. The results show that the 7-fs pulses create a few-nm-thick layer with high-density electrons and excite short-range surface plasmon polaritons, which have a large wave number around the layer and induce the plasmonic near-field nanoablation. The period size estimated by using a model target reproduces well the observed size of nanostructures. [ABSTRACT FROM AUTHOR]

SnTe is an important material because of its applications in mid-infrared photo-detectors. In the present work, the effects of film thickness on scaling law and surface properties (i.e., morphologies and optical properties) of SnTe thin films have been investigated. SnTe thin films of different thicknesses are prepared by means of e-beam evaporation technique. The surface morphology of each film is analyzed by atomic force microscopy (AFM) as well as a scanning electron microscope. The crystallinity of the films is found to increase with increasing film thickness, as confirmed by x-ray diffraction and Raman measurements. Fractal analysis is performed on AFM images to investigate the irregularity of surfaces. It is found that the surface of the thicker sample is rougher than the thinner sample. The autocorrelation function is applied to investigate the self-affine fractal nature of surfaces. The average roughness, interface width, lateral correlation length, local surface slope, and fractal dimension increased with film thickness. The values of roughness exponent, growth exponent, dynamic exponent, and steepening exponent are calculated and found to be α = 0.76 - 0.96 , β = 0.75 , z = 1.92 , and λ = 0.35 - 0.25 , respectively. The scaling exponents together with the other parameters such as the local surface slope indicate that the growth is quasi-3D island/mound type with rapid surface roughening behavior and obeys anomalous scaling. The multiple scattering cross sections of light together with Fourier transform infrared spectroscopy data analyses suggest that the higher crystalline film with a smaller number of defects is infrared-sensitive and may be more suitable for advanced mid-infrared detector applications. [ABSTRACT FROM AUTHOR]

A process for growing gallium nitride (GaN) vertical p–i–n homojunctions on (111) silicon substrates using metalorganic chemical vapor deposition was developed, and a triple mesa etch technique was used to fabricate efficient betavoltaic energy converters. Monte Carlo simulation platform CASINO was used to model beta radiation penetration into GaN to aid device design. The resulting devices were tested under irradiation from a scanning electron microscope electron beam (e-beam) tuned to imitate the energies of the 63Ni beta emission spectrum. Based on current–voltage measurements taken under e-beam illumination, a maximum open-circuit voltage of ∼ 412 mV and a maximum short-circuit current density of ∼ 407 nA/cm2 were measured. A high fill factor of ∼ 0.77 and power conversion efficiency of ∼ 6.6 % were obtained. Additionally, the proposed triple mesa etch technique used to create these betavoltaics has the potential for further use in fabricating many types of electronic devices using a wide variety of material platforms. [ABSTRACT FROM AUTHOR]

Perovskite La2Ti2O7 nanocrystalline powder was obtained through the shock synthesis method. In the study, La2O3 and TiO2 powders were mixed through ball milling and, subsequently, shocked by a flyer at a velocity of 3.2 km/s. After shock treatment, the sample was recovered and characterized via various techniques, such as x-ray diffraction, Raman, scanning electron microscope, transmission electron microscope, and ultraviolet-visible diffuse reflection spectrum analysis, to find the presence of La2Ti2O7 nanocrystalline powder with an average grain size of approximately 30 nm in the recovered samples with different yields. Moreover, the results further confirm that the high shock temperature and long ball milling treatment induce higher activation of precursors to improve the La2Ti2O7 content in the recovered samples. By adjusting the relative density of precursor and the ball milling period, pure La2Ti2O7 nanocrystalline powder was obtained. The formation mechanism of La2Ti2O7 was carefully illustrated. This study presents a new method to synthesize La2Ti2O7 nanocrystalline powder by detonation-driven flyer impact. [ABSTRACT FROM AUTHOR]

Glass-ceramics containing oriented Sr2TiSi2O8 fresnoite crystallites were explored for piezocatalysis induced dye degradation capability. The parent glass of the 2SrO–1TiO2–3.3SiO2–0.2K2O–0.1Al2O3 (components are indicated by molar ratio) composition was manufactured using the well-known melt-quench method. The two-parent glass samples were separately heat-treated at the crystallization temperature of 850 and 1000 °C/3 h for obtaining varying amounts of Sr2TiSi2O8 crystallites in the glass matrix. The presence of Sr2TiSi2O8 crystallites on the surface of both glass-ceramics was confirmed using x-ray diffraction. The micrographs obtained from the scanning electron microscope evidenced the presence of more numbers along with the greater sizes of Sr2TiSi2O8 crystallites on the surface of the 1000 °C/3 h sample in comparison to the 850 °C/3 h sample. These glass-ceramics were piezoelectric, as the 1000 °C/3 h sample showed a maximum d33 value of 10 pC/N after sufficient polishing. This non-ferroelectric piezoelectricity was induced due to the oriented crystallization of Sr2TiSi2O8 crystallites in the glass-ceramics. The transparency was decreased in this order: parent glass>850 °C/3 h sample>1000 °C/3 h sample. During the piezocatalytic dye degradation experiment, the degradation of methylene blue dye was found to be 71% and 83% within 300 min under ultrasonication energy using 850 and 1000 °C/3 h glass-ceramics, respectively. The hydroxyl radical ( OH ˙ ) was identified as the main active species behind the piezocatalytic dye degradation using glass-ceramics. Hence, this work showed that glass-ceramics can be used for the water-cleaning application using vibrational energy. [ABSTRACT FROM AUTHOR]

The ferroelectric Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZTO) ceramic particles were immobilized in a polymer matrix of polyvinylidene difluoride (PVDF) in order to fabricate flexible and stable composite films for the treatment of water using the piezocatalysis process. The content of BCZTO in BCZTO/PVDF composite films was 0, 5, and 10 wt. % of PVDF. The presence of the BCZTO phase in PVDF composites was confirmed using x-ray diffraction, Raman spectroscopy, and a scanning electron microscope. Piezocatalytic activity of BCZTO/PVDF composite films was investigated by monitoring the degradation of various organic dyes, pharmaceuticals, and bacteria present in the water. The highest values of dye degradation were achieved in 10 wt. % BCZTO/PVDF composite films, where the model dyes named methylene blue, Rhodamine B, and methyl orange dyes were degraded by ∼91%, ∼86%, and 90% after the sonication for 180 min, respectively. The dye degradation performance using piezocatalysis was found to be repeatable and consistent for up to five cycles. Hydroxyl radical (⋅OH) was identified to be the main reactive species behind piezocatalytic dye degradation. An increment in dye degradation performance was observed with an increment in the power of the ultrasonicator during piezocatalysis. In addition, 10 wt. % BCZTO/PVDF composite films displayed 59% and 50% degradation of pharmaceutical antibiotics named tetracycline and ciprofloxacin, respectively, within 180 min of sonication, respectively. Also, more than 99.99% E. coli bacteria were inactivated using 10 wt. % BCZTO/PVDF composite films under 180 min of sonication treatment and showed a bacterial log reduction of 3.4. These promising results indicate the 10 wt. % BCZTO/PVDF composite film as a potential candidate for the treatment of water using piezocatalysis technology. [ABSTRACT FROM AUTHOR]

Nanobubble formation by radiolysis of water has been observed in a transmission electron microscope using very high electron dose ratios. Here, surface micro- and nanobubbles were formed in situ in a conventional scanning electron microscope at relatively low magnifications of ∼1000. Bubble formation was observed at a low dose ratio of 1.3 × 1011 electrons/cm2 s, which is 5–7 orders of magnitude smaller than in previous studies using transmission electron microscopes. Our observations suggest that the pressure in the liquid cell is one of the important factors for the formation of bubbles. The contact angles obtained by direct observation of 69 bubbles were 50°–90°, with an average of 69°. These angles are much larger than those of the bubbles previously observed using an atomic force microscope. Despite the large contact angles (and large Laplace pressures), the micro- and nanobubble lifetimes were at least three days. Scanning electron microscopy shows potential as an important analytical tool for micro- and nanobubbles. [ABSTRACT FROM AUTHOR]

Nanoparticles of manganese cobalt oxide (MnCo2O4) have been prepared with the hydrothermal method, while nanocomposites of MnCo2O4/polypyrrole (MCO/PPy) have been prepared by dispersing MCO nanoparticles in the PPy matrix by an in situ chemical polymerization method. MCO/PPy nanocomposites' structural characterizations were made by x-ray diffraction (XRD) and field-emission scanning electron microscope (FESEM). XRD and FESEM analyses give evidence that MCO nanoparticles are dispersed uniformly, and there is an effect on crystallinity and particle size. The observed shift in the stretching vibrations of Fourier transform infrared spectra for MCO/PPy nanocomposites confirms the interaction between MCO nanoparticles and PPy. Furthermore, the temperature-dependent (300–453 K) DC conductivity measurements of MCO/PPy nanocomposites depict the presence of different conduction mechanisms. The conductivity data are well fitted by the 3D variable range hopping (3D-VRH) model and the band conduction model at low and high temperatures. The characteristic temperature (T0) calculated from the 3D-VRH and the activation energy (Ea) calculated from the band conduction model support the observed highest conductivity for the 10 wt. % MCO/PPy nanocomposite. [ABSTRACT FROM AUTHOR]

Reported here is a comparison of the magnetic, magnetocaloric, and dielectric properties of 50% iron substituted GdCrO3 (GdFe0.5Cr0.5O3) bulk pellet and 960 nm thick film of GdFe0.5Cr0.5O3 (GFCO). The 960 nm film was synthesized on a platinized-silicon substrate by chemical solution deposition and spin-coating methods. The X-ray diffraction scans of the bulk sample and the film as well as the morphology of the film as examined by the field-emission scanning electron microscope indicate phase-pure and polycrystalline nature of these samples. X-ray photoelectron spectroscopy was used to determine the valence states of Gd, Fe, and Cr. The temperature dependence of the dielectric constant from 225 to 700 K shows peaks at TC = 525 K for the bulk and ∼450 K for the film due to ferroelectric to paraelectric transitions, since electric polarization vs electric field hysteresis loops are observed at room temperature. The dielectric studies in the bulk GFCO for T > TC indicate a relaxor-like behavior. The measurements of the magnetization (M) of the samples as a function of temperature (5–350 K) and magnetic field (H) up to 7 T (=70 kOe) depict hysteresis behavior at low temperatures due to the canted antiferromagnetic order of Fe3+/Cr3+ below the Néel temperature of ∼275 K. The M vs H isotherms at various temperatures are used to determine and compare the magnetic entropy change (−ΔS) and relative cooling power (RCP) of the two samples, yielding (−ΔS) = 30.7 J/kg K (18.8 J/kg K) and RCP = 566.5 J/kg (375 J/kg) for the bulk (960 nm film) samples of GFCO at 7 K and 7 T, respectively. The plot of RCP vs T shows that magnetic cooling for this system is most effective for T < 30 K. Comparatively smaller magnitudes of (−ΔS) and RCP for the film vis-à-vis the bulk sample of GFCO scale with its reduced magnetization. This suggests that further improvements in the quality of the films are needed to improve their magnetization and hence their magnetocaloric properties, possibly making them useful for on-chip cooling in miniaturized devices. [ABSTRACT FROM AUTHOR]

Al-doped ZnO (AZO) is a promising candidate as a transparent conducting electrode. However, the electrical properties of AZO deteriorate greatly after exposing it to excessive heat. This limits the applications of AZO in devices that experience a demanding operation environment. It has been shown that a ZnO cap layer with proper morphology is capable to dramatically improve the thermal stability of AZO. However, the detailed mechanism is not yet clear. A comparison study of the electrical properties of AZO with a ZnO cap layer prepared by magnetron sputtering (MS) at low substrate temperature (70 °C) and chemical vapor deposition (CVD) at high substrate temperature (600 °C) indicates that MS-prepared ZnO is much less effective in protecting AZO from an oxidizing environment under elevated temperature than the CVD-prepared ZnO. The morphology and crystal structures of two types of ZnO/AZO, investigated by a scanning electron microscope and x-ray diffraction, are relatively similar, whereas the atomic structures (e.g., defects) revealed by Raman spectroscopy are rather different. The results suggest that it is difficult to improve the thermal stability of electrical properties of AZO without a proper restructuring process and a ZnO cap layer that could sacrifice its own structural order. The discoveries offer a novel approach to improve the performance of other transparent conducting oxides. [ABSTRACT FROM AUTHOR]

Red phosphors based on BaLaLiTeO6 doped with Eu3+ were prepared by high temperature solid state method. The XRD patterns for the representative samples revealed its single phase structure and the scanning electron microscopes were studied to reveal the morphology and homogeneous distribution of particles with different size. In addition, the density of states and partial density of states of each element revealed that Ba-O and La-O groups are the main factors that determine the optical properties of the BaLaLiTeO6. When emitted by 394 nm near-ultraviolet, all the samples emit bright red light near 618 nm because of 5D0 → 7F2 transition of Eu3+ ions. The optimal doping concentration of Eu3+ in BaLaLiTeO6 is 0.20 and the mechanism of concentration quenching is the dipole-quadrupole interaction. Besides, the temperature-dependent emission spectra of BaLaLiTeO6:0.2Eu3+ red sample were studied systematically and the thermal activation energy of the sample was 0.30 eV, indicating its good thermal stability. The lifetime of Eu3+ ions is in the millisecond level and the CIE chromaticity coordinate of BaLaLiTeO6:0.2Eu3+ is (0.6436, 0.3535) with a high color purity of 99.4%, which is close to the standard of red chromaticity. To sum up, the BaLaLiTeO6:Eu3+ phosphors are the hopeful red component applied in the white light illumination. [ABSTRACT FROM AUTHOR]

A silicon p-n junction has been mapped using electron beam induced current in both a scanning transmission electron microscope (STEM) and a conventional scanning electron microscope (SEM). In STEM, the transmission of a higher energy electron beam through the thin specimen leads to better spatial resolution and a more uniform interaction volume than can be achieved in SEM. Better spatial resolution is also achieved in the thin TEM specimens as the diffusion lengths of the minority carriers are much lower than measured in bulk material due to the proximity of specimen surfaces. We further demonstrate that a positive fixed surface charge favors surface recombination of electrons in n-type silicon and induces a surface depletion region in p-type silicon. These results have been compared to off-axis electron holography measurements of the electrostatic potentials and simulations of the internal fields. [ABSTRACT FROM AUTHOR]

Compared to the bulky ceramic counterparts, antiferroelectric (AFE) thin films exhibit higher energy-storage performance. It has been demonstrated that the performance of the AFE thin films is strongly affected by the thickness. However, possible changes in the phase structures and microstructures accompanied by varying thicknesses have been less known, which makes it hard to fully understand the physical insight of the thickness effect. Herein, we fabricate a series of PbZrO3 (PZ) thin films by chemical solution deposition whose thickness is approximately proportional to the number of deposition layers, i.e., one to four layers with each layer of about 60 nm in thickness. The detailed structural characterization has been performed by using x-ray diffraction, a scanning electron microscope, and a transmission electron microscope. The films are composed of nanorods oriented normal to the films in which each nanorod maintains single crystalline though segmented by the horizontal interfaces between each of the two neighboring layers, suggesting nearly perfect epitaxy during multilayer growth. The multidomain state is found in three-/four-layer PZ thin films while the one-/two-layer PZ films always present a monodomain state. Meanwhile, incommensurate phases with different modulation periods have been observed in the four-layer PZ films. By comparing the as-observed structural features with the measured electrical properties of different films, it seems that microstructural evolution with the film thickness should not be negligible in evaluating the structure–property relation of PZ-based thin films. [ABSTRACT FROM AUTHOR]

Forming nanocone structures on a silicon (Si) surface by low (<100 eV) energy helium plasma has been proposed in recent years as a simple method for fabricating black Si, which is an attractive material for photon absorption through the solar spectrum. In this study, different appearances of the Si surface were observed and analyzed with a scanning electron microscope. By introducing impurities of molybdenum and tungsten during plasma irradiation, it was revealed that the formation and the distribution of nanocones have a clear dependence on the amount of impurities on the surface. [ABSTRACT FROM AUTHOR]

A BiFeO3 (BFO) film is epitaxially grown on an (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) substrate to investigate the lattice mismatch effect on the domain structure and lattice strain status within the BFO film. Atomic resolution scanning transmission electron microscope image, selected area electron diffraction (SAED) patterns, and X-ray reciprocal space mapping (XRSM) data clearly reveal that the lattice strain originating from the lattice mismatch between BFO and LSAT is relaxed by causing misfit dislocations in the BFO film. The SAED and XRSM data indicate that the crystal structure of BFO film is rhombohedral with the space group R3c. In particular, XRSM data acquired along two different in-plane orientations reveal that the BFO layer consists of two different domains that were 90° off each other with respect to the surface normal orientation. An atomistic model based on the crystal orientation relation found by SAED and XRSM shows that (1) the ferroelectric polarization axes of both domains are 35.6° with respect to the BFO film surface and (2) the two domains are consistent with the so-called 71° (and/or 109°) ferroelectric domains reported previously. The lattice mismatch of ∼2.8% calculated based on the epitaxial relation is proposed to be too large to be stored as elastic strain energy within the BFO layer. [ABSTRACT FROM AUTHOR]

This paper reports on the ohmic contact formed by the conductive glass layer found at the interface of Ag/Si contacts on lowly doped emitter silicon solar cells due to the presence of semimetal nanoparticles. The scanning electron microscopy and scanning transmission electron microscope analyses revealed an interface glass layer (IGL) thickness of greater than 380 nm, which was enriched with micro-sized alloys composed of semimetal nanoparticles. This IGL was conductive as confirmed by conductive atomic force microscopy (C-AFM). The presence of these semimetal nanoparticles, identified as Ag 2 Te and PbTe, was both endowed with low bandgap energies as confirmed by Raman spectroscopy and energy dispersive x-ray spectroscopy. These semimetal nanoparticles were found only in the IGL and formed a "bridge" to connect the Ag gridline and Si emitter for carrier transport. Based on the modified Fowler–Nordheim tunneling process, the modeled C-AFM I–V characteristic curve showed a barrier height of 0.1 eV corresponding to an IGL thickness of only 18 nm. Thus, the carrier transport mechanism "through the conductive bridge" was formed by the semimetal nanoparticles embedded in the IGL. Therefore, the high conductivity of the interface glass led to the specific contact resistance to be independent of the emitter peak doping concentration. [ABSTRACT FROM AUTHOR]

The scanning electron microscope (SEM) is a powerful tool for analyzing the surface of various specimens. SEM observation at low voltage, which is typically lower than the 1 kV range, is very effective for obtaining surface information of specimens. However, at the low voltage range, resolution is restricted by the brightness and energy spread of electron sources. Therefore, to improve the resolution, a bright and monochromatic electron source is indispensable. In this work, we focused on an electron gun with a negative electron affinity photocathode using p-type GaAs and Cs–O adsorbates. The resolution of a prototype SEM was improved by approximately 16% compared with a SEM using a conventional Schottky emission (SE)-type emitter at the acceleration voltage of 1 kV. In addition, results showed that the measured brightness was as high as an SE-type emitter (∼107 A/m2/sr/V) and the estimated energy spread was less than 0.2 eV, which was narrower than that of a cold field emission-type emitter. [ABSTRACT FROM AUTHOR]

High-angle annular dark-field (HAADF) imaging and electron energy loss spectroscopy (EELS) in a Cs-corrected scanning transmission electron microscope were utilized to analyze the interfacial atomic structure of InAs/GaSb superlattices (SLs) grown by metalorganic chemical vapor deposition (MOCVD) on InAs substrates. Despite high growth temperature, narrow interface (IF) widths of less than 2.5 monolayers (MLs) and 3.8 MLs were extracted from HAADF and EELS, respectively, indicating that the IF quality of MOCVD-grown InAs/GaSb SLs is comparable to those grown by molecular beam epitaxy. GaAs-type IFs are considered to account for the narrow IF width. In addition, GaSb-on-InAs IFs were found to be sharper and more strained than InAs-on-GaSb IFs, which is correlated with the special gas supply and switching sequence during MOCVD growth. The strain profile deduced from the HAADF image suggests that little Sb is incorporated into InAs sublayers and 7% In is incorporated into GaSb sublayers. [ABSTRACT FROM AUTHOR]

La3+, Sm3+, and Gd3+ triple-doped ceria Ce1−x(La1/3Sm1/3Gd1/3)xO2−δ (x = 0.06, 0.12, 0.18, 0.24, and 0.30) materials were synthesized by the sol-gel autocombustion method. The selections of dopants were made by an optimized-average atomic number in accordance with the criteria for optimal-doping in ceria. The higher values of relative-density were achieved above 95% by sintering the samples at 1300 °C. The single-phase cubic-fluorite structures, high-density surface-microstructure with uniformly distributed grains, elemental confirmations, and concentration of oxygen vacancies were confirmed using powder x-ray diffraction, scanning electron microscope with energy dispersive spectroscopy, and micro-Raman spectroscopy. Electrical analysis was carried out by impedance spectroscopy, which confirmed the highest value of total-ionic-conductivity, i.e., 0.0381 S/cm at 600 °C with a minimum activation-energy for the Ce0.82La0.06Sm0.06Gd0.06O2−δ (LSG6) composition. Thermal-expansion analyses confirmed the moderate coefficient of thermal-expansion values for all the compositions and were found to be in good agreement with the recently developed materials. The enhanced total-ionic-conductivity and the moderate coefficient of thermal expansion of LSG6 make it as a potential solid-electrolyte for intermediate temperature-solid oxide fuel cell applications. [ABSTRACT FROM AUTHOR]

We have investigated the grain-boundary scattering effect on the thermal transport behavior of uranium dioxide ( UO 2). The polycrystalline samples having different grain-sizes (0.125, 1.8, and 7.2 μ m) have been prepared by a spark plasma sintering technique and characterized by x-ray powder diffraction, scanning electron microscope, and Raman spectroscopy. The thermal transport properties (the thermal conductivity and thermoelectric power) have been measured in the temperature range of 2–300 K, and the results were analyzed in terms of various physical parameters contributing to thermal conductivity in these materials in relation to grain-size. We show that thermal conductivity decreases systematically with lowering grain-size in the temperatures below 30 K, where the boundary scattering dominates the thermal transport. At higher temperatures, more scattering processes are involved in the heat transport in these materials, making the analysis difficult. We determined the grain-boundary Kapitza resistance that would result in the observed increase in thermal conductivity with grain-size and compared the value with Kapitza resistances calculated for UO 2 using molecular dynamics from the literature. [ABSTRACT FROM AUTHOR]

The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V characteristics indicated a better ideality factor and less leakage current at the reverse bias, as the annealing temperature increased up to 500 °C for a duration of 30 min. X-ray diffraction and scanning transmission electron microscope measurements were performed to verify that the bismuth composition was unaffected during the annealing process. Energy dispersive x-ray analysis indicated that Sb clustering occurs at high annealing temperatures, resulting in a concomitant degradation in the electrical performance. The optimum electrical characteristics of the diode were obtained with an annealing temperature of 500 °C for 30 min, resulting in an ideality factor of 1.3 being achieved. [ABSTRACT FROM AUTHOR]

We show that secondary electrons in a scanning electron microscope can provide important information about spatial dopant distribution in p-i-n GaN structures, with the highest contrast observed for a primary electron beam accelerating voltage in the range of 1 to 2 kV. The current through the specimen is used to determine the total backscattered and secondary electron yield. We establish a correlation between the secondary electron emission intensity and the doping characteristics of the material. The secondary electron emission intensity was found to be highest for p-type GaN, intermediate for n-type GaN, and lowest for undoped GaN. Specimen currents are found to have a strong correlation with the Mg concentration in p-GaN films. The contrast associated with dopants is shown to depend on experimental parameters such as primary electron beam voltage, total electron beam exposure, and specimen surface history. This technique can serve as a powerful tool for the development and characterization of thin films for GaN power electronics. [ABSTRACT FROM AUTHOR]

The electron beam induced current (EBIC) mode of a scanning electron microscope (SEM) is a widely used technique for the quantitative assessment of minority carrier diffusion length and surface recombination. Point source (one-dimensional) and extended source (two-dimensional) analytical models are two widely used approaches to assess this information in geometry where the electron beam (e-beam) is parallel to the p-n junction. In this article, a two-dimensional (2D) analytical model is evaluated and compared with 2D finite element numerical simulations, where the electron beam-solid interaction is modeled using a Monte Carlo simulation coupled with a drift-diffusion solver. The simulations are computed for both low and high level injection conditions. The effect of an e-beam injection level on the shape of EBIC profiles is analyzed to evaluate limitations of the analytical models. [ABSTRACT FROM AUTHOR]

Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In this work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD densities were estimated to be ≈4 × 104 cm−1 and ≈5 × 108 cm−2, respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquiring the backscattered electrons and the latter collecting the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials. [ABSTRACT FROM AUTHOR]

Interdiffusion in gold/titanium films with titanium evaporated on silicon at different oblique angles (0°, 30°, 50°, and 70°) and gold evaporated under normal incidence is investigated using a scanning electron microscope and in-situ sheet resistance measurements for the optimization of the films' effective gettering ability during and after a low-temperature thermal activation. Films have a tilted columnar structure and a porosity increasing with the deposition angle in agreement with calculated values. The oxygen effective gettering ability, characterized by energy-dispersive X-ray spectroscopy, increases with the deposition angle. It is shown that the gold/titanium film with titanium deposited with an oblique angle of 50° is an optimized condition to obtain the largest sorption capacity after 1 h thermal activation at temperatures lower or equal to 300 °C. This film has a low initial residual stress that becomes highly tensile if thermal activation is performed above 300 °C. [ABSTRACT FROM AUTHOR]

Interdiffusion in gold/titanium films with titanium evaporated on silicon at different oblique angles (0°, 30°, 50°, and 70°) and gold evaporated under normal incidence is investigated using a scanning electron microscope and in-situ sheet resistance measurements for the optimization of the films' effective gettering ability during and after a low-temperature thermal activation. Films have a tilted columnar structure and a porosity increasing with the deposition angle in agreement with calculated values. The oxygen effective gettering ability, characterized by energy-dispersive X-ray spectroscopy, increases with the deposition angle. It is shown that the gold/titanium film with titanium deposited with an oblique angle of 50° is an optimized condition to obtain the largest sorption capacity after 1 h thermal activation at temperatures lower or equal to 300 °C. This film has a low initial residual stress that becomes highly tensile if thermal activation is performed above 300 °C. [ABSTRACT FROM AUTHOR]

The spatial distribution of electron-hole pair generation in β-Ga2O3 as a function of scanning electron microscope (SEM) beam energy has been calculated by a Monte Carlo method. This spatial distribution is then used to obtain the diffusion length of charge carriers in high-quality epitaxial Ga2O3 films from the dependence of the electron beam induced current (EBIC) collection efficiency on the accelerating voltage of a SEM. The experimental results show, contrary to earlier theory, that holes are mobile in β-Ga2O3 and to a large extent determine the diffusion length of charge carriers. Diffusion lengths in the range 350–400 nm are determined for the as-grown Ga2O3, while processes like exposing the samples to proton irradiation essentially halve this value, showing the role of point defects in controlling minority carrier transport. The pitfalls related to using other popular EBIC-based methods assuming a point-like excitation function are demonstrated. Since the point defect type and the concentration in currently available Ga2O3 are dependent on the growth method and the doping concentration, accurate methods of diffusion length determination are critical to obtain quantitative comparisons of material quality. [ABSTRACT FROM AUTHOR]

Electron beam induced current (EBIC) measurements provide a powerful tool for characterizing semiconductor based materials and devices. By measuring the current generated by the electron beam of a scanning electron microscope (SEM), EBIC allows us to extract the minority carrier diffusion length (L) and the surface recombination velocity to diffusivity ratio (S/D) of a material. When combined with information on minority carrier lifetime (τ), for instance from time-resolved photoluminescence measurements, the minority carrier mobility of the material can be extracted. However, the EBIC technique relies heavily on the accurate modeling of the carrier generation and collection process. Traditionally, this was achieved using a combination of empirical analytical expressions (and later Monte Carlo simulations) for carrier generation and analytical diffusion/ recombination expressions for carrier collection. This approach introduces significant uncertainties into the extracted material parameters. Here, we present a numerical approach to EBIC modeling which improves the spatial resolution of our model, while also retaining information regarding the relative EBIC signal as a function of incident beam energies and currents. We apply this technique to investigate the temperature dependent minority carrier mobility of InAs/InAsSb and InGaAs/ InAsSb strained layer superlattice infrared detectors and compare our results to the values obtained using external quantum efficiency measurements of the same samples. Our approach not only allows for an improvement in the uncertainty of the extracted material parameters, but also offers insight into the material and device behavior as a function of nonequilibrium carrier concentration. The technique presented here offers potentially improved characterization of not only infrared detectors, but a range of semiconductor-based devices. [ABSTRACT FROM AUTHOR]

To produce a realistic tokamak-like plasma environment in linear plasma device, a transient source is needed to deliver heat and particle fluxes similar to those seen in an edge localized mode (ELM). ELMs in future large tokamaks will deliver heat fluxes of ~1GW/m2 to the divertor plasma facing components at a few Hz. An electrothermal plasma source can deliver heat fluxes of this magnitude. These sources operate in an ablative arc regime which is driven by a DC capacitive discharge. An electrothermal source was configured with two pulse lengths and tested under a solenoidal magnetic field to determine the resulting impact on liner ablation, plasma parameters, and delivered heat flux. The arc travels through and ablates a boron nitride liner and strikes a tungsten plate. The tungsten target plate is analyzed for surface damage using a scanning electron microscope. [ABSTRACT FROM AUTHOR]

The evolution of material strength within several dense particle suspensions impacted by a projectile is investigated and shown to be strongly dependent on the particle material in suspension. For stronger particles, such as silicon carbide, the shear strength of the fluid is shown to increase with the ballistic impact strength. For weaker particles, such as silica, the shear strength of the suspension is found to be independent of impact strength in this dynamic range of tests. A soft-capture technique is employed to collect ejecta samples of a silica-based shear thickening fluid, following a ballistic impact and penetration event. Ejecta samples that were collected from impacts at three different velocities are observed and compared to the benchmark particles using a Scanning Electron Microscope. The images show evidence of fractured and deformed silica particles recovered among the nominally 1 µm diameter monodisperse spheres. There is also evidence of particle fragments that appear to be the result of interparticle grinding. The trends observed in the shear strength estimates are interpreted with regards to the particle damage seen in the ejecta recovery experiments to develop a concept of the impact response of these fluids. The results suggest that particle slip through deformation is likely the dominant factor in limiting the transient impact strength of these fluids. Particularly, particle strength is important in the formation and collapse of dynamically jammed particle contact networks in the penetration process. [ABSTRACT FROM AUTHOR]

Graphite cathodes are widely used due to their good emission properties, especially their long lifetime. Some previous papers have researched their lifetime under certain conditions and uncovered some important phenomena. This paper is dedicated to research the lifetime of the graphite cathode under higher power. In the lifetime test, the voltage and current amplitudes are about 970 kV and 9.7 kA, respectively. The repetition rate is 20 Hz. An X-band relativistic backward wave oscillator is used to generate high power microwave by utilizing the electron beam energy. The experimental results demonstrate that the emission property of the graphite cathode remains quite stable during 105 pulses, despite some slight deteriorations regarding the beam and microwave parameters. The macroscopic morphology change of the cathode blade due to material evaporation is observed by a laser microscope. The mass loss of the graphite cathode is about 60 μg/C. Meanwhile, the observation by a scanning electron microscope uncovers that the original numerous flaky micro-structures are totally replaced by a relatively smooth surface at the mid region of the cathode blade and a large number of new micro-protrusions at the blade edges during the lifetime test. [ABSTRACT FROM AUTHOR]

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress. [ABSTRACT FROM AUTHOR]

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination. [ABSTRACT FROM AUTHOR]

The effect of filler aspect ratio on the electromagnetic properties of epoxy-amine resin reinforced with carbon nanofibers is here investigated. A heat treatment at 2500?°C of carbon nanofibers seems to increase their aspect ratio with respect to as-received ones most likely due to a lowering of structural defects and the improvement of the graphene layers within the dixie cup conformation. These morphological differences revealed by Raman's spectroscopy and scanning electron microscopy analyses may be responsible for the different electrical properties of the resulting composites. The DC characterization of the nanofilled material highlights an higher electrical conductivity and a lower electrical percolation threshold for the heat-treated carbon nanofibers based composites. In fact, the electrical conductivity is about 0.107?S/m and 1.36?×?10-3?S/m for the nanocomposites reinforced with heat-treated and as received fibers, respectively, at 1?wt.?% of nanofiller loading, while the electrical percolation threshold falls in the range [0.05-0.32]wt.?% for the first nanocomposites and above 0.64?wt.?% for the latter. Moreover, also a different frequency response is observed since the critical frequency, which is indicative of the transition from a resistive to a capacitive-type behaviour, shifts forward of about one decade at the same filler loading. The experimental results are supported by theoretical and simulation studies focused on the role of the filler aspect ratio on the electrical properties of the nanocomposites. [ABSTRACT FROM AUTHOR]

Short-arc lamps are equipped with tungsten electrodes due to their ability to withstand a high thermal load during operation. Nominal currents of more than one hundred amperes lead to a cathode tip temperature near the melting point of tungsten. To reduce the electrode temperature and, thereby, to increase the maintenance of such lamps, ThO2 or tentatively La2O3 are added to the electrode material. They generate a reduced work function by establishing a monolayer of emitter atoms on the tungsten surface. Emitter enrichments on the lateral surface of doped cathodes are formed. They are traced back to transport mechanisms of emitter oxides in the interior of the electrode and on the electrode surface in dependence of the electrode temperature and to the redeposition of vaporized and ionized emitter atoms onto the cathode tip by the electric field in front. The investigation is undertaken by means of glow discharge mass spectrometry, scanning electron microscope images, energy dispersive x-ray spectroscopy, and through measurements of the optical surface emissivity. The effect of emitter enrichments on the stability of the arc attachment is presented by means of temporally resolved electrode temperature measurements and by measurements of the luminous flux from the cathode-near plasma. They show that the emitter enrichments on the lateral surface of the cathode are attractive for the arc attachment if the emitter at the cathode tip is depleted. In this case, it moves along the lateral surface from the cathode tip to sections of the cathode with a reduced work function. It induces a temporary variation of the cathode tip temperature and of the light intensity from the cathodenear plasma, a so-called flickering. In particular, in case of lanthanated cathodes, strong flickering is observed. [ABSTRACT FROM AUTHOR]

Sn whiskers are observed by scanning electron microscope on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging. Only Cu6Sn5 phase appears in the X-ray diffraction patterns and no Sn element is detected in the Cu sublayer by scanning transmission electron microscopy. Based on the interfacial thermodynamics, the intermetallic Cu6Sn5 compound phase may form directly at the Sn grain boundary. Driven by the stress gradient during the formation of Cu6Sn5 compound at Sn grain boundaries, Sn atoms segregate onto the Cu surface and accumulate to form Sn whisker. [ABSTRACT FROM AUTHOR]

We experimentally demonstrate a multi-wavelength ultrafast erbium-doped fiber laser incorporating a lm-scale topological insulator: Bi2Se3/Polyvinyl Alcohol film as both an excellent saturable absorber for mode-locking and a high-nonlinear medium to induce a giant third order optical nonlinear effect for mitigating the mode competition of erbium-doped fiber laser and stabilizing the multi-wavelength oscillation. By properly adjusting the pump power and the polarization state, the single-, dual-, triple-, four-wavelength mode-locking pulse could be stably initiated. For the four-wavelength operation, we obtain its pulse width of ~22 ps and a fundamental repetition rate of 8.83 MHz. The fiber laser exhibits the maximum output power of 9.7 mW with the pulse energy of 1.1 nJ and peak power of 50W at the pump power of 155 mW. Our study shows that the simple, stable, low-cost multi-wavelength ultrafast fiber laser could be applied in various potential fields, such as optical communication, biomedical research, and radar system. [ABSTRACT FROM AUTHOR]