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Scanning tunneling microscopy for semiconductor carrier profiling is simulated in three dimensions. By solving the tunnel currents between a probe tip and a sample consistently with the current continuity equations, current-voltage characteristics in good agreement with measurements are obtained. Critical differences from potential-based calculations are observed under depletion and inversion conditions. By preparing a current-concentration table from samples with uniform concentrations, the carrier profile in p-n junction samples can be extracted by estimating the concentrations at each position. It is revealed that the tunnel current is spread around the depletion region of a p-n junction, which affects the results dramatically. When a proposed simulation is iteratively used with measurements, impurity profile extraction is possible even in the depletion region. [ABSTRACT FROM AUTHOR]

Presents a study that investigated the influence of electron temperature and of bias on charge build-up caused by electron shading in inductively-coupled plasmas at 2 to 40 mTorr in argon. Background on plasma charging damage to the gate-oxide of metal oxide semiconductor field effect transistors; Measurement of the electron and ion currents going into the silicon substrate through the dielectric structure; Effect of the electron temperature on the floating potential of the sample.

Demonstrates the use of oscillator-amplifier system for spectral narrowing of high-power D[sub2]O laser, in which a single-mode output from a compact D[sub2]O laser with a short cavity length was amplified by a large D[sub2]O laser amplifier. Significance of the spectral narrowing of an optically pumped high-power D[sub2]O laser; Differences of D[sub2]O laser from the conventional laser system; Maximum output energy of the D[sub2]O laser system.