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Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling.
- Source :
- Journal of Applied Physics; 2014, Vol. 116 Issue 2, p023701-1-023701-11, 11p, 5 Diagrams, 1 Chart, 19 Graphs
- Publication Year :
- 2014
-
Abstract
- Scanning tunneling microscopy for semiconductor carrier profiling is simulated in three dimensions. By solving the tunnel currents between a probe tip and a sample consistently with the current continuity equations, current-voltage characteristics in good agreement with measurements are obtained. Critical differences from potential-based calculations are observed under depletion and inversion conditions. By preparing a current-concentration table from samples with uniform concentrations, the carrier profile in p-n junction samples can be extracted by estimating the concentrations at each position. It is revealed that the tunnel current is spread around the depletion region of a p-n junction, which affects the results dramatically. When a proposed simulation is iteratively used with measurements, impurity profile extraction is possible even in the depletion region. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97089254
- Full Text :
- https://doi.org/10.1063/1.4884876