Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling.

Scanning tunneling microscopy for semiconductor carrier profiling is simulated in three dimensions. By solving the tunnel currents between a probe tip and a sample consistently with the current continuity equations, current-voltage characteristics in good agreement with measurements are obtained. Critical differences from potential-based calculations are observed under depletion and inversion conditions. By preparing a current-concentration table from samples with uniform concentrations, the carrier profile in p-n junction samples can be extracted by estimating the concentrations at each position. It is revealed that the tunnel current is spread around the depletion region of a p-n junction, which affects the results dramatically. When a proposed simulation is iteratively used with measurements, impurity profile extraction is possible even in the depletion region. [ABSTRACT FROM AUTHOR]