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Your search keyword '"Tsukagoshi, Kazuhito"' showing total 21 results
Start Over Author "Tsukagoshi, Kazuhito" Journal japanese journal of applied physics
21 results on '"Tsukagoshi, Kazuhito"'

2. C60 nanowire two-state resistance switching: fabrication and electrical characterizations.

Author

Tsukagoshi, Kazuhito, Umeta, Yukiya, and Suga, Hiroshi

Abstract

Newly discovered nanomaterials are expected to be applied as elements in new functional electronics. Since the discovery of fullerene, scanning tunneling microscopy under ultrahigh vacuum and a cryogenic temperature has been a popular method of extracting the properties of single molecules. However, some nanoelements exhibit a function based on a single-molecule property even though they are embedded in a cluster. Here, we present our experimental demonstration of a single-fullerene motion resistive switching device for functional fullerene electronics, which can be realized in crystal nanowires (NWs). We fabricated a two-terminal device using fullerene self-assembled C60 NWs, which can be synthesized by dispersing fullerenes in a solution, keeping them in a supersaturated state, and maintaining a liquid–liquid interface. We found that the C60 NW device can be operated at room temperature and can reproducibly perform several hundred repetitive switch operations. The reproducibility of the device fabrication is high, and we expect the appearance of integrated devices based on the results of our experiments. In this progress review of our C60 switching device, we describe details of the device fabrication and electric operation that take advantage of the various properties inherent in fullerenes for reproducible future minimal-scale switching systems [Umeta, H. et al., ACS Appl. Nano Mater. 4, 820 (2021)]. [ABSTRACT FROM AUTHOR]

Published
2022
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7. Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3.

Author

Kobayashi, Riku, Nabatame, Toshihide, Onaya, Takashi, Ohi, Akihiko, Ikeda, Naoki, Nagata, Takahiro, Tsukagoshi, Kazuhito, and Ogura, Atsushi

Abstract

Characteristics of thin-film transistors (TFTs) with amorphous In2O3 (InO1.2) and carbon-doped In2O3 (InO1.16C0.04) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO1.16C0.04 TFT exhibited superior properties such as a threshold voltage (Vth) of 3.2 V and a high mobility of 20.4 cm2 V−1 s−1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative Vth shift was observed for the InO1.2 TFT for 10 800 s in N2 under zero bias voltage while there was no Vth change for the InO1.16C0.04 TFT. [ABSTRACT FROM AUTHOR]

Published
2021
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10. Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit

Author

Nakaharai, Shu, primary, Iijima, Tomohiko, additional, Ogawa, Shinichi, additional, Yagi, Katsunori, additional, Harada, Naoki, additional, Hayashi, Kenjiro, additional, Kondo, Daiyu, additional, Takahashi, Makoto, additional, Li, Songlin, additional, Tsukagoshi, Kazuhito, additional, Sato, Shintaro, additional, and Yokoyama, Naoki, additional

Published
2015
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20. C60nanowire two-state resistance switching: fabrication and electrical characterizations

Author

Tsukagoshi, Kazuhito, Umeta, Yukiya, and Suga, Hiroshi

Abstract

Newly discovered nanomaterials are expected to be applied as elements in new functional electronics. Since the discovery of fullerene, scanning tunneling microscopy under ultrahigh vacuum and a cryogenic temperature has been a popular method of extracting the properties of single molecules. However, some nanoelements exhibit a function based on a single-molecule property even though they are embedded in a cluster. Here, we present our experimental demonstration of a single-fullerene motion resistive switching device for functional fullerene electronics, which can be realized in crystal nanowires (NWs). We fabricated a two-terminal device using fullerene self-assembled C60NWs, which can be synthesized by dispersing fullerenes in a solution, keeping them in a supersaturated state, and maintaining a liquid–liquid interface. We found that the C60NW device can be operated at room temperature and can reproducibly perform several hundred repetitive switch operations. The reproducibility of the device fabrication is high, and we expect the appearance of integrated devices based on the results of our experiments. In this progress review of our C60switching device, we describe details of the device fabrication and electric operation that take advantage of the various properties inherent in fullerenes for reproducible future minimal-scale switching systems [Umeta, H. et al., ACS Appl. Nano Mater.4, 820 (2021)].

Published
2022
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21. Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications

Author

Chang, Ming, Lin, Yi, Lin, Fu, and Tsukagoshi, Kazuhito

Abstract

We present a review of recent developments in the synthesis, thickness identification, electronic properties, and possible applications of layered MoTe2 flakes. Special emphasis is made on two-dimensional (2D) MoTe2 semiconductors and the extensive research in recent years on their applications in electronics. Layered MoTe2 flakes have been the focus of substantial interest in the research community because of their fascinating characteristics, including an appropriate band gap and a simple fabrication method (exfoliation) to form layered nanomaterials. Our aim is to provide the readers an overview of layered MoTe2 flakes and to understand their properties, which may lead to their applications in micro- and nanoelectronics.

Published
2016

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