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We theoretically investigate dwell time for electrons in a magnetic nanostructure with a δ -doping, which is formed on InAs / Al x In 1 − x As heterostructure by depositing a ferromagnetic (FM) stripe. We find that dwell time depends strongly on electron-spins owing to Zeeman coupling and broken symmetry. We also demonstrate that spin-polarized dwell time can be manipulated by δ -doping. Thus, electron spins can be separated in time dimension and such a magnetic nanostructure can be employed as a structurally-controllable temporal spin splitter for spintronics device applications. [ABSTRACT FROM AUTHOR]

The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian. [ABSTRACT FROM AUTHOR]

In a biased two-dimensional electron gas, the presence of spin-orbit coupling of both the Rashba and Dresselhaus type leads to a Hall conductivity of charge carriers in the absence of an external magnetic field. We study the dynamical charge-Hall effect, the field-induced spin accumulation, and the magnetoelectric effect for a system with short-range elastic impurity scattering by analytically solving the kinetic equations for the spin-density matrix in the linear response regime. By tuning the strength of the Rashba and Dresselhaus spin-orbit coupling as well as the frequency and direction of the applied electric field, eigenmodes of the spin-coupled system are identified. [ABSTRACT FROM AUTHOR]

The intrinsic spin Hall effect has been attracting increasing theoretical and experimental interest since its discovery about two years ago. In this article, we review the main achievements in the theoretical aspect of both dissipative and nondissipative spin Hall effects in mesoscopic systems. The Landauer–Büttiker formula and Green's function approach based numerical method for the spin Hall effect is also introduced. [ABSTRACT FROM AUTHOR]

We study the magnetization and the magnetic phases of II-VI-based n-doped nonmagnetic- semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures. [ABSTRACT FROM AUTHOR]