SPIN-GALVANIC EFFECT AND SPIN ORIENTATION BY CURRENT IN NON-MAGNETIC SEMICONDUCTORS.

Authors :: GANICHEV, S. D.
Source :: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 1/20/2008, Vol. 22 Issue 1/2, p1-26. 26p. 7 Diagrams, 6 Graphs.
Publication Year :: 2008
Abstract: The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian. [ABSTRACT FROM AUTHOR]

Subjects :: *SPINTRONICS
*SEMICONDUCTORS
*ROTATIONAL motion
*HAMILTONIAN systems
*SPIN-lattice relaxation

Language :: English
ISSN :: 02179792
Volume :: 22
Issue :: 1/2
Database :: Academic Search Index
Journal :: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics
Publication Type :: Academic Journal
Accession number :: 29441543
Full Text :: https://doi.org/10.1142/S0217979208046001

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