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Your search keyword '"Wen-Chin Tsay"' showing total 3 results
Start Over Author "Wen-Chin Tsay" Journal ieee transactions on nuclear science
3 results on '"Wen-Chin Tsay"'

1. Studies of large area silicon microstrip sensors

Author

Wen-Chin Tsay, Jyh-Wong Hong, Chang, Y.H., Chen, A., Hou, S.R., Hsu, S.L., Lin, C.H., Lin, Willis T., Hsien-Jen Ting, Chiang, Song-Tsang, Chuang, Emily, and Su-Wen Hwang

Subjects
Nuclear track detectors -- Evaluation, Semiconductor nuclear counters -- Evaluation, Hadron spectroscopy -- Equipment and supplies, Business, Electronics, Electronics and electrical industries
Abstract

Aiming at future uses in large silicon tracking devices, 4x8 [cm.sup.2] silicon microstrip sensors were fabricated, and the processes related to such sensors were studied. The fabrication of 4x8 [cm.sup.2] silicon microstrip sensors on 100 mm wafers has become a routine procedure with a good yield rate. A 4x64 [cm.sup.2] long ladder, assembled from eight pieces of 4x8 [cm.sup.2] sensors, has been tested at the CERN SPS area. Test results show that such a detector is feasible.

Published
1995

2. Studies on reducing leakage current of large-area silicon microstrip sensors

Author

Li-Hong Laih, Wen-Chin Tsay, Yen-Ann Chen, Chin-Chuan Cheng, Yuan-Hann Chang, Chung-Ren Li, S.R. Hou, Jyh-Wong Hong, Willis Lin, Augustine E. Chen, Song-Tsang Chiang, Wei-Chen Liang, and Hsien-Jen Ting

Subjects
Nuclear and High Energy Physics, Materials science, Silicon, Annealing (metallurgy), business.industry, chemistry.chemical_element, Microstrip, law.invention, Capacitor, Ion implantation, Nuclear Energy and Engineering, chemistry, law, Electronic engineering, Optoelectronics, LOCOS, Electrical and Electronic Engineering, Resistor, business, Leakage (electronics)
Abstract

8/spl times/4 cm/sup 2/ single-sided p/sup +/-i (or v)-n/sup +/ silicon microstrip sensors with coupling capacitors and polysilicon bias resistors were fabricated with the planar technology, and various techniques used to reduce the leakage currents of sensors and their results are presented. Different gettering processes have been employed to remove the impurities and defects from the sensor active regions, and the Electronic Research and Service Organization (ERSOs) Charge-Coupled Device (CCD) gettering technique, combined with backside polysilicon and oxide-nitride-oxide (ONO) deposition process, was found to be the most effective and suitable one. From the measurement results of the special p/sup +/-i (or v)-n/sup +/ junction test structures, it was found that the sensor leakage current mainly came from the side-wall leakage of its p/sup +/-strip. A modified LOCal Oxidation of Silicon (LOGOS) isolation process has been used to reduce this side-wall leakage. Also, the Sirtl-etch analysis of the sensor revealed that the side-wall leakage current has been caused by residual boron-implantation defects after annealing. These defects would concentrate along the edge of p/sup +/-strip and be enhanced to cause dislocations by the film-edge-induced stress effect. Several annealing techniques have also been studied to remove the boron-implantation damages. The fabricated prototype sensors have been tested in a beam at the CERN Super Proton Synchrotron area. The test results showed that the sensor concept under study is feasible.

Published
1998
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3. Studies of large area silicon microstrip sensors

Author

Jyh-Wong Hong, C.H. Lin, E. Chuang, Willis Lin, Hsien-Jen Ting, Yuan-Hann Chang, S.L. Hsu, Su-Wen Hwang, Wen-Chin Tsay, S.R. Hou, Augustine E. Chen, and Song-Tsang Chiang

Subjects
Nuclear and High Energy Physics, Large Hadron Collider, Materials science, Fabrication, Silicon, business.industry, Detector, chemistry.chemical_element, Particle accelerator, Tracking (particle physics), Particle detector, law.invention, Semiconductor detector, Nuclear Energy and Engineering, chemistry, law, Optoelectronics, Yield rate, Wafer, Electrical and Electronic Engineering, business, Silicon microstrip detectors
Abstract

Aiming at future uses in large silicon tracking devices, 4/spl times/8 cm/sup 2/ silicon microstrip sensors were fabricated, and the processes related to such sensors were studied. The fabrication of 4/spl times/8 cm/sup 2/ silicon microstrip sensors on 100 mm wafers has become a routine procedure with a good yield rate. A 4/spl times/64 cm/sup 2/ long ladder, assembled from eight pieces of 4/spl times/8 cm/sup 2/ sensors, has been tested at the CERN SPS area. Test results show that such a detector is feasible. >

Published
1995
Full Text
View/download PDF

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