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Your search keyword '"Zhiyang Chen"' showing total 2 results
Start Over Author "Zhiyang Chen" Journal ieee transactions on industry applications
2 results on '"Zhiyang Chen"'

1. Modeling of MOS-side carrier injection in trench-gate IGBTs

Author

Liqing Lu, Zhiyang Chen, Angus Bryant, Hudgins, Jerry L., Palmer, Patrick R., and Santi, Enrico

Subjects
Bipolar transistors -- Models, Bipolar transistors -- Design and construction, Metal oxide semiconductors -- Electric properties, Business, Computers, Electronics, Electronics and electrical industries
Published
2010

2. Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes

Author

Enrico Santi, Zhiyang Chen, Alexander Grekov, Jeffrey B. Casady, David C. Sheridan, Ruiyun Fu, Jerry L. Hudgins, and Homer Alan Mantooth

Subjects
Physics, Transistor, JFET, Mechanics, Thermal conduction, Industrial and Manufacturing Engineering, Finite element method, law.invention, chemistry.chemical_compound, chemistry, Control and Systems Engineering, law, Robustness (computer science), Logic gate, Silicon carbide, Electronic engineering, Electrical and Electronic Engineering, Saturation (chemistry)
Abstract

A novel SiC junction field-effect transistor (JFET) model that uses a unified description of linear and saturated conduction modes is proposed. Advantages of the proposed model are improved robustness and convergence, inclusion of field-dependent mobility effects, and more physical description of the current saturation phenomenon. The model is validated against a normally off JFET sample over a wide temperature range. Finite-element simulations are used to demonstrate the physics-based nature of the proposed model.

Published
2011

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