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This paper addresses the potential use of the (La0.67, Sr0.33)MnO3 (LSMO) ferromagnetic thin-film materials as microwave tunable enabling technology. LSMO thin-film materials have a strong interaction between their electrical and magnetic properties that could be translated into innovative tunable microwave components. The knowledge of the electroactive and magnetoactive properties of these materials is essential for modeling and design of novel microwave devices. The activity of these materials can be described by their electro/magnetoresistance and magnetocapacitance. The 400-nm-thick LSMO thin film is, formed by the chemical solution deposition. Interdigital capacitor is chosen due to its high sensitivity for tunability and the fact that the metallization and patterning by photolithography are key issues in the fabrication of such structures which are formed by the deposition of metal on a single side of the LSMO thin film. The I-V relation, measured by tuning the bias voltage, is nonlinear and symmetric with respect to the polarity of the applied field. The switching to high resistive state is definite and sharp. Under electrostatic bias field, it is assumed that electric current flowing through narrow low-resistance path induces intense local magnetic field, resulting in the decrease of film resistance. This paper takes a close look in modeling the change of the LSMO resistance in terms of both working frequency and applied bias. [ABSTRACT FROM AUTHOR]

Presents information on a study which investigated the influence of surface recombination on the burn-in effect in microwave GaInP/GaAs heterojunction bipolar transistors. Device description; Direct current characterization; Electrical stress; Conclusions.

Presents information on a study which implemented an experimental setup based on current/voltage conversion through transimpedance amplifiers for the direct full low-frequency noise (LFN) characterization of heterojunction bipolar transistors (HBT). Transimpedance measurement setup description; Buffer amplifier for transimpedance setup improvement; Si/SiGe HBT LFN characterizations.

Presents a study which demonstrated that the correlation resistance can be employed as a guide for the intrinsic low-frequency noise (LFN) source modeling of a bipolar transistor. Description of low-frequency noise model; Properties of the correlation resistance and LFN modeling; Simulation of the frequency dependence of the correlation resistance.