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Influence of Surface Recombination on the Burn-In Effect in Microwave GaInP/GaAs HBT's.
- Source :
-
IEEE Transactions on Electron Devices . Jan99, Vol. 46 Issue 1, p10. 7p. 2 Black and White Photographs, 8 Graphs. - Publication Year :
- 1999
-
Abstract
- Presents information on a study which investigated the influence of surface recombination on the burn-in effect in microwave GaInP/GaAs heterojunction bipolar transistors. Device description; Direct current characterization; Electrical stress; Conclusions.
- Subjects :
- *BIPOLAR transistors
*DIRECT currents
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 1447959
- Full Text :
- https://doi.org/10.1109/16.737435