Search

Your search keyword '"Lin, Horng-Chih"' showing total 18 results
Start Over Author "Lin, Horng-Chih" Journal ieee transactions on electron devices
18 results on '"Lin, Horng-Chih"'

2. Self-Organized Germanium Quantum Dots/Si3N4 Enabling Monolithic Integration of Top Si3N4-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing

Author

Lin, Chih-Hsuan, Hong, Po-Yu, Lee, Bing-Ju, Lin, Horng-Chih, George, Thomas, and Li, Pei-Wen

Abstract

Using a coordinated combination of lithographic patterning and self-assembled growth, Ge spherical quantum dots (QDs) were controllably generated within host layers of Si3N4 as active medium for Si photonics. A significant fabrication advantage of our approach is the high-temperature thermal stability of Ge QDs that are formed by thermal oxidation of poly-SiGe lithographically patterned structures at 800 °C–900 °C, offering flexibility in the waveguide (WG)-material choices, co- design, and integration of Ge photonic devices. Our Ge QDs enable monolithic integration of microdisk light emitters and p-i-n photodetectors (PDs) with top-Si3N4 WG-coupled structures using standard Si processing. Low dark current of 0.3 mA/cm2 at 300 K and $0.2\,\mu \text{A}$ /cm2 at 77 K in combination with 3-dB frequency of 12 GHz for Ge-QD PDs and low threshold power of 0.6 kW/cm2 for optically pumped Ge QD/SiN microdisks light emission evidence the high degree of crystallinity of our Ge QDs being an effective building block for 3-D SiN photonic integrated circuits.

Published
2023
Full Text
View/download PDF

3. Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Author

Chen, Chi-Chun, Lin, Horng-Chih, Chang, Chun-Yen, Liang, Mong-Song, Hsin-Chao, Hsien, Szu-Kang, Huang, Tiao-Yuan, and Chao, Tien-Sheng

Subjects
Breakdown (Electricity) -- Research, Oxides -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Ultrathin gate oxides were examined for plasma-induced charging damage.

Published
2000

17. Implementation of Film Profile Engineering in the Fabrication of ZnO Thin-Film Transistors.

Author

Lyu, Rong-Jhe, Lin, Horng-Chih, and Huang, Tiao-Yuan

Subjects
*THIN film transistor manufacturing, *ZINC oxide, *LOGIC circuits, *BRIDGE circuits, *ELECTRON mobility, *MICROFABRICATION
Abstract

A novel approach, which can delicately form a desirable film profile for deposited gate oxide, channel, and source/drain contacts of oxide-based thin-film transistors (TFTs) is proposed. To demonstrate the film-profile engineering concept used in this approach, a simple one-mask process was developed for fabricating ZnO TFTs with submicrometer channel length. The fabrication takes advantage of a suspended bridge hanging across the device to tailor the desirable profile of deposited films with proper tools. The fabricated devices show high on/off current ratio (>10^9) , steep subthreshold swing (71–187 mV/decade), and high mobility (21–45 cm^2/V\cdot~s ). Very small variation in device characteristics among the devices with the same channel dimensions is also confirmed. [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
View/download PDF

18. Ambipolar Schottky-Barrier TFTs.

Author

Lin, Horng-Chih, Yeh, Kuan-Lin, Huang, Tiao-Yuan, Huang, Ruo-Gu, and Sze, Simon M.

Subjects
*TRANSISTORS, *ELECTRIC currents, *SCHOTTKY barrier diodes, *THIN films
Abstract

Demonstrates a poly-silicon Schottky barrier thin-film transistor device that can improve the on/off current. Characteristics of ambipolar operation; Leakage mechanisms; Effects of field-induced-drain lengths.

Published
2002
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results