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The performance enhancement of strained p-channel multiple-gate transistors or FinFETs using a novel ultra high-stressor liner comprising diamond-like carbon (DLC) is demonstrated. The performance enhancement of the FinFETs is considered to be due to the coupling of compressive stress form the DLC liner to the channel, resulting in hole mobility improvement.

The pure germanium stressors selectively grown in the source/drain (S/D) regions of nanowire field effect transistors for significant performance enhancement are demonstrated. A novel melt-enhanced dopant diffusion and activation technique to form fully embedded [Si.sub.0.15][Ge.sub.0.85] S/D stressors in nanowires FETs is also presented.

The effectiveness of in situ doping high-substitutional-carbon SiC:P source/drain (S/D) stressors in increasing the strain-induced ([I.sub.Dsat]) for -oriented (110)-sidewall DG FinFETs is examined. The studies have shown that a significant 20% strain-induced enhancement is seen in SiC:P S/D FinFETs, incorporating a substitutional carbon concentration of 2.1%.

We clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si1-yCy or Si:C) for Schottky-barrier height (SBH) reduction. Carbon-induced energy bandgap Eg narrowing and the segregation of dysprosium (Dy) at the Ni[Dy]Si:C/Si:C interface were shown to be responsible for SBH reduction in this paper. First, we show that electron barrier height (ΦBN) reduction of up to 69 meV (or 10.3%) for NiSi can be achieved with the scaling of substitutional carbon Csub concentration from 0% to 1.0%. Second, new evidence revealing the segregation of Dy-based interlayer at the Ni[Dy]Si:C/Si:C interface and an additional 321 meV (or 53%) reduction in ΦBN for NiSi:C are presented. This could be due to charge transfer at the Ni[Dy]Si:C/Si:C interface. The successful modulation of ΦBN for Ni[Dy]S:C translates to an effective 41% reduction in device REXT, resulting in improved drive current performance. This opens new avenues to optimize the Si1-yCy contact interface for extending transistor performance in future technological generations. [ABSTRACT FROM AUTHOR]

Phosphorus in situ doped Si1-yCy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate ‹110‹-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ~∼15% and ∼22 % was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D respectively. [ABSTRACT FROM AUTHOR]

Lists the reviewers who contributed to IEEE Transactions on Electron Devices in 2012. [ABSTRACT FROM AUTHOR]