Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

The performance enhancement of strained p-channel multiple-gate transistors or FinFETs using a novel ultra high-stressor liner comprising diamond-like carbon (DLC) is demonstrated. The performance enhancement of the FinFETs is considered to be due to the coupling of compressive stress form the DLC liner to the channel, resulting in hole mobility improvement.