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Avalanche breakdown characteristics are essential for designing avalanche photodiodes. In this letter, we investigated the effects of adding Ga to Al1–xGaxAs0.56Sb0.44 quaternary alloys. Using p-i-n diodes with a 100-nm i—region and alloy composition ranging from $x=0$ to 0.15, we found that the bandgap energy of Al1–xGaxAs0.56Sb0.44 reduces from 1.64 to 1.56 eV. The corresponding avalanche breakdown voltage decreases from 13.02 to 12.05 V, giving a reduction of 64.7 mV for every percent addition of Ga. The surface leakage current was also found to be significantly lower in the diodes with $x=0.10$ and 0.15 suggesting that Ga can be added to reduce the surface leakage current while still preserving the lattice match to InP substrate. The data from this letter can be downloaded freely. [ABSTRACT FROM PUBLISHER]

High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43° full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2sr. [ABSTRACT FROM PUBLISHER]

In this letter, the authors demonstrate a wavelength flexible platform for the production of long-wavelength vertical-cavity surface-emitting lasers which provide full wavelength coverage from 1.3-1.6 μm. All-epitaxial InP-based devices with AsSb-based distributed Bragg reflectors were achieved through a common design, process, and growth technology at both the important telecommunications wavelengths of 1.3 and 1.5 μm. Thin selectively etched tunnel junctions were implemented as low-loss apertures and offer scalability to small device dimensions. Devices showed low threshold currents (<2 mA), near single-mode (SMSR>20 dB) operation, and high differential efficiency (>40% at 1.3 μm and >25% at 1.5 μm). [ABSTRACT FROM PUBLISHER]