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GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power.
- Source :
- IEEE Photonics Technology Letters; 3/15/2006, Vol. 18 Issue 6, p758-760, 3p
- Publication Year :
- 2006
-
Abstract
- High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43° full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2sr. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 10411135
- Volume :
- 18
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Photonics Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 52131770
- Full Text :
- https://doi.org/10.1109/LPT.2006.871679