8 results on '"Ribes, G"'
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2. Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS.
3. Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques [CMOS transistors].
4. Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-k dielectrics) [MOS devices].
5. Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-K dielectrics)
6. Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS
7. Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques
8. New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing
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