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In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thickness ( $\text{t}_{\mathrm {ch}})$ from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) $\mu _{\textit {n$\_{}$eff}})$ of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of $\text{t}_{\mathrm {ch}}$ . The device with $\text{t}_{\mathrm {ch}} = 15$ nm displayed a value of $\mu _{\textit {n$\_{}$eff}} = 2,190$ cm2/V-s at room temperature. This valuewas found to decrease as $\text{t}_{\mathrm {ch}}$ was scaled down.

Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.

Highly activated n-type dopant is essential for n+/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond 1020 cm-3. Well-behaved Sb-doped nv/p Ge diode I-V characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.

Recessed Si/sub 0.8/Ge/sub 0.2/ source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si/sub 0.8/Ge/sub 0.2/ plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.