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pMOSFET With 200% Mobility Enhancement Induced by Multiple Stressors.
- Source :
- IEEE Electron Device Letters; Jun2006, Vol. 27 Issue 6, p511-513, 3p, 5 Graphs
- Publication Year :
- 2006
-
Abstract
- Recessed Si<subscript>0.8</subscript>Ge<subscript>0.2</subscript> source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si<subscript>0.8</subscript>Ge<subscript>0.2</subscript> plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 27
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21100715
- Full Text :
- https://doi.org/10.1109/LED.2006.875766