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Data are reported for n-MOSFET's fabricated in laser crystallized poly-Si on amorphous insulating substrates. The dependence of electrical characteristics on the effective channel length in the range of 100 to 0.3 µm and on channel width from 120 to 20 µm is presented. The electron surface mobility is found to increase as the channel length is reduced, approaching that of devices in single-crystalline silicon. The source-to-drain leakage current, negligible for long channels, rapidly increases for channels shorter than ≃ 3 µm. This excessive current results from grain boundary diffusion of As from source and drain during high temperature fabrication steps.

The charge collected within the SiO 2 layer of an MOS capacitor during bombardment with kilovolt electrons is approximately proportional to the field in the oxide. We have used this proportionality to form SEM images of the field distribution in MOSFET channels.