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Direct observation of the gate Oxide electric field distribution in Silicon MOSFET's
- Source :
- IEEE Electron Device Letters. 3:1-3
- Publication Year :
- 1982
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1982.
-
Abstract
- The charge collected within the SiO 2 layer of an MOS capacitor during bombardment with kilovolt electrons is approximately proportional to the field in the oxide. We have used this proportionality to form SEM images of the field distribution in MOSFET channels.
- Subjects :
- Materials science
Silicon
Field (physics)
Scanning electron microscope
business.industry
Oxide
chemistry.chemical_element
Electron
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Gate oxide
Electric field
MOSFET
Optoelectronics
Electrical and Electronic Engineering
Atomic physics
business
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........3a58be376e9146c3b45c7c182fe6f891
- Full Text :
- https://doi.org/10.1109/edl.1982.25452