1. Memories of tomorrow
- Author
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Dietmar Essex Junction Gogl, William Robert Reohr, Yu Lu, Stuart S. P. Parkin, F. Pesavento, William J. Gallagher, G. Muller, C. Arndt, R. Robertazzi, K. Lewis, Hans-Heinrich Viehmann, H. Honigschmid, Li-Kong Wang, Roy Edwin Scheuerlein, Philip L. Trouilloud, and S. Lammers
- Subjects
Random access memory ,Engineering ,Hardware_MEMORYSTRUCTURES ,business.industry ,Spin-transfer torque ,Electrical engineering ,Short read ,Electronic, Optical and Magnetic Materials ,Tunnel magnetoresistance ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Bubble memory ,Electrical and Electronic Engineering ,business ,Instrumentation ,Quantum tunnelling - Abstract
With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.
- Published
- 2002
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